Patents by Inventor An Chen

An Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11885620
    Abstract: An inertia detection device includes one set of gyro sensors for detecting an angular velocity of a detection target object along a same direction, the gyro sensors arranged in a same physical quantity range, in which sensor movement is detectable as a same physical quantity. When an abnormality affecting an output signal of one of the gyro sensors is caused, based on an observation that a difference of magnitudes of the output signals from normal and abnormal gyro sensors is different from a difference of magnitudes of the output signals from two normal gyro sensors, such an abnormality of one of the gyro sensors is determinable by a comparison between the output signals, without using an estimated value thereof.
    Type: Grant
    Filed: May 24, 2022
    Date of Patent: January 30, 2024
    Assignee: DENSO CORPORATION
    Inventors: Chao Chen, Naoki Yoshida
  • Patent number: 11884214
    Abstract: Provided is a display method for A-pillar-mounted display assemblies of a vehicle. The method includes: acquiring facial posture information of a driver of the vehicle in a camera coordinate system by any one driver monitoring assembly of at least one driver monitoring assembly, determining a visual field of the driver based on a gaze direction of the driver and the eye position of the driver, acquiring coordinates of the two display assemblies in a world coordinate system, converting the coordinates of the two display assemblies in the world coordinate system into coordinates in the camera coordinate system based on a first conversion relationship, determining whether any one display assembly of the two display assemblies is within the visual field, and capturing an external image of the vehicle captured by the imaging assembly.
    Type: Grant
    Filed: March 10, 2021
    Date of Patent: January 30, 2024
    Assignees: Beijing BOE Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Gang Li, Yachong Xue, Hao Zhang, Lili Chen, Minglei Chu, Hong Zhu, Hong Li, Xinqi Lin, Shuai Liu, Hui Zhao
  • Patent number: 11884293
    Abstract: Disclosed are autonomous vehicles that may autonomously navigate at least a portion of a route defined by a service request allocator. The autonomous vehicle may, at a certain portion of the route, request remote assistance. In response to the request, an operator may provide input to a console that indicates control positions for one or more vehicle controls such as steering position, brake position, and/or accelerator position. A command is sent to the autonomous vehicle indicating how the vehicle should proceed along the route. When the vehicle reaches a location where remote assistance is no longer required, the autonomous vehicle is released from manual control and may then continue executing the route under autonomous control.
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: January 30, 2024
    Assignee: Uber Technologies, Inc.
    Inventors: Arvind Srinivasan, Samann Ghorbanian-Matloob, Sean Shanshi Chen, Eli Schleifer, Shelley Bower, Patrick Willett
  • Patent number: 11888054
    Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. A first nitride-based semiconductor layer is disposed over the buffer. A shield layer is disposed between the buffer and the first nitride-based semiconductor layer and includes a first isolation compound that has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, in which the first isolation compound is made of at least one two-dimensional material which includes at least one metal element. A second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The pair of S/D electrodes and the gate electrode are disposed over the second nitride-based semiconductor layer.
    Type: Grant
    Filed: January 8, 2021
    Date of Patent: January 30, 2024
    Assignee: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
    Inventors: Ronghui Hao, Fu Chen, Chuan He, King Yuen Wong
  • Patent number: 11887254
    Abstract: A method for correcting space coordinates of a three-dimensional model includes: step S1, reading information of an original coordinate frame of a three-dimensional model in a first format and the origin of coordinates of the model; reading information of nodes from three-dimensional model data in the first format, and calculating original coordinates of the nodes; step S2, calculating parameters of correction between the original coordinate frame and a target coordinate frame; step S3, transforming and correcting the coordinates of the origin and nodes of the three-dimensional model in the first format one by one by using the space coordinate correction matrix to obtain information of coordinate points of the three-dimensional model in the second format; and step S4, storing a file of the three-dimensional model in the second format with corrected space coordinates. Also, a method for encrypting space coordinates of a three-dimensional model is provided.
    Type: Grant
    Filed: February 4, 2021
    Date of Patent: January 30, 2024
    Assignee: CHONGQING SURVEY INSTITUTE
    Inventors: Zejun Xiang, Zhiyong Zhou, Yan Zhang, Liangchao Chen, Kaiquan Hu, Hong Ma, Junqian Zhang
  • Patent number: 11888414
    Abstract: A driving circuit and a driving method are provided. The driving circuit includes a power stage circuit and a full-bridge circuit. The power stage circuit is configured to receive an input voltage, and generate an output voltage at an output port of the power stage circuit. The full-bridge circuit is coupled to the output port of the power stage circuit and is configured to perform charging and discharging on a piezoelectric load. An operating mode of the full-bridge circuit is controlled, so that a supply voltage signal for driving the piezoelectric load during a first operating interval of an operating cycle corresponds to a reference voltage in a first interval, and the supply voltage signal during a second operating interval of the operating cycle corresponds to the reference voltage in a second interval. The driving circuit has a small volume, which is conducive to circuit integration.
    Type: Grant
    Filed: August 17, 2021
    Date of Patent: January 30, 2024
    Assignee: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
    Inventors: Zhiwei Xu, Chiqing Fang, Chen Zhao
  • Patent number: 11888833
    Abstract: Disclosed are techniques for securing electronic control units (ECUs) in a vehicle. A security platform for a vehicle includes a key distribution center (KDC) for the vehicle. The KDC is configured to verify that a digital certificate associated with a first electronic control unit (ECU) on the vehicle is a valid certificate, where the digital certificate indicates a first security level of the first ECU. The KDC is configured to generate, based on the first security level of the first ECU, one or more security keys for secure communication between the first ECU and a set of ECUs on the vehicle, and provision the one or more security keys to the first ECU and the set of ECUs. In some embodiments, the KDC uses the provisioned keys to authenticate each ECU when the vehicle is powered up.
    Type: Grant
    Filed: January 5, 2022
    Date of Patent: January 30, 2024
    Assignee: Beijing Voyager Technology Co., Ltd.
    Inventors: Jiang Zhang, Xiaoyong Yi, Qi Chen, Yu Wang, Fengmin Gong
  • Patent number: 11888094
    Abstract: A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: January 30, 2024
    Assignee: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.
    Inventors: Anhe He, Su-hui Lin, Jiansen Zheng, Kangwei Peng, Xiaoxiong Lin, Chen-ke Hsu
  • Patent number: 11888845
    Abstract: Security functions for a memory corresponding to a smart security storage may be facilitated or executed through operation of utility application corresponding to a smart device. For example, encryption/decryption of data stored on the memory may be facilitated or executed by a security module under control of an access application corresponding to the smart device. Data securely stored on the memory may be explored and accessed by the smart device or a host computing device under control of the access application.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: January 30, 2024
    Assignee: KINGSTON DIGITAL, INC.
    Inventors: Ben Wei Chen, Chih-Hung Wu
  • Patent number: 11883344
    Abstract: An example photoacoustic system for neurostimulation includes a light producing device for producing light of a specific wavelength. At least one nanotransducer is binded on a surface of a neuron. The nanotransducer converts the light with the specific wavelength into at least one acoustic wave at or near the neuron.
    Type: Grant
    Filed: January 30, 2023
    Date of Patent: January 30, 2024
    Assignee: Trustees of Boston University
    Inventors: Chen Yang, Ji-Xin Cheng
  • Patent number: 11884024
    Abstract: Techniques for forming a nanopore in a lipid bilayer are described herein. In one example, an agitation stimulus level such as an electrical agitation stimulus is applied to a lipid bilayer wherein the agitation stimulus level tends to facilitate the formation of nanopores in the lipid bilayer. In some embodiments, a change in an electrical property of the lipid bilayer resulting from the formation of the nanopore in the lipid bilayer is detected, and a nanopore has formed in the lipid bilayer is determined based on the detected change in the lipid bilayer electrical property.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: January 30, 2024
    Assignee: Roche Sequencing Solutions, Inc.
    Inventors: Roger J. A. Chen, Randy Davis
  • Patent number: 11887635
    Abstract: A read head includes a permanent magnet (PM) layer formed up to 100 nm behind a free layer where PM layer magnetization may be initialized in a direction that adjusts free layer (FL) bias point, and shifts sensor asymmetry (Asym) closer to 0% for individual heads at slider or Head Gimbal Assembly level to provide a significant improvement in device yield. Asym is adjusted using different initialization schemes and initialization directions. With individual heads, initialization direction is selected based on a prior measurement of asymmetry. The PM layer is CoPt or CoCrPt and has coercivity from 500 Oersted to 1000 Oersted. The PM layer may have a width equal to the FL, or in another embodiment, the PM layer adjoins a backside of the top shield and has a width equal to or greater than that of the FL.
    Type: Grant
    Filed: July 1, 2022
    Date of Patent: January 30, 2024
    Assignee: Headway Technologies, Inc.
    Inventors: Glen Garfunkel, Yan Wu, Wenyu Chen, Kunliang Zhang, Min Li, Shohei Kawasaki
  • Patent number: 11886035
    Abstract: A lens module is provided, including a holder, a barrel, and an optical element. The optical element is affixed in the barrel, and the holder has a first material. Additionally, the barrel is affixed in the holder and has a second material, wherein the hardness of the first material is greater than the hardness of the second material.
    Type: Grant
    Filed: November 30, 2021
    Date of Patent: January 30, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Yu-Cheng Lin, Chen-Chi Kuo, Kun-Shih Lin, Fu-Yuan Wu
  • Patent number: 11887934
    Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.
    Type: Grant
    Filed: December 5, 2022
    Date of Patent: January 30, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Han-Wen Chen, Steven Verhaverbeke, Giback Park, Giorgio Cellere, Diego Tonini, Vincent DiCaprio, Kyuil Cho
  • Patent number: D1012635
    Type: Grant
    Filed: February 13, 2023
    Date of Patent: January 30, 2024
    Assignee: Dongguan Baike Electronic Technology Co., Ltd.
    Inventor: Sheng Chen
  • Patent number: D1012689
    Type: Grant
    Filed: November 30, 2021
    Date of Patent: January 30, 2024
    Assignee: Acer Incorporated
    Inventors: Wei-Chang Chen, Jung-Wei Tsao
  • Patent number: D1012918
    Type: Grant
    Filed: September 25, 2023
    Date of Patent: January 30, 2024
    Inventor: Sumin Chen
  • Patent number: D1013041
    Type: Grant
    Filed: September 25, 2023
    Date of Patent: January 30, 2024
    Inventor: Lei Chen
  • Patent number: D1013060
    Type: Grant
    Filed: September 22, 2023
    Date of Patent: January 30, 2024
    Inventor: Cuobian Chen
  • Patent number: D1013315
    Type: Grant
    Filed: November 22, 2021
    Date of Patent: January 30, 2024
    Inventor: Yanqing Chen