Abstract: A semiconductor structure includes a substrate, a first fin structure disposed over the substrate, a second fin structure disposed over the substrate, and an isolation structure disposed between the first fin structure and the second fin structure and electrically isolating the first fin structure from the second fin structure. The isolation structure includes a first thickness, a second thickness and a third thickness different from each other.

Abstract: In enhanced licensed assisted access (eLAA), providing several approaches to report the CSI measurement may be desirable to provide flexibility in CSI reporting, especially in aperiodic CSI reporting. Further, a difference in using a licensed carrier and an unlicensed carrier may be considered during communication. In addition, assigning different transmit power usage based on different transmission types may be desired. The apparatus may be a user equipment (UE). The apparatus may be a UE. The UE receives a grant for uplink communication. The UE determines a reporting subframe based on the grant. The UE determines whether to select, as a reference subframe, a triggering subframe in which the grant is received or a subframe before the reporting subframe. The UE transmits, in the reporting subframe, channel state information (CSI) measured in the reference subframe.

Abstract: An information handling system includes a bracket in physical contact with a server compute module. The bracket includes an adjustable guide that can rotate between a first position and a second position within the bracket. The adjustable guide is in the first position in response to a first peripheral card being inserted within the bracket, and is in the second position in response to a second peripheral card being inserted within the bracket.

Abstract: The present disclosure identifies RNAs (including mRNAs and miRNAs) that are bound by LIN-28 in C. elegans. Many of these RNAs have clear human orthologs, and many of these human orthologs are common druggable targets in cancer and/or other diseases, such as kinases, phosphatases, methyltransferases, phosphodiesterases, etc. Accordingly, the present disclosure provides biological targets for LIN-28 expressing cancers, and which are thus useful for selecting chemical and/or biological agents for cancer treatment.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first inter-metal dielectric (IMD) layer thereon; forming a first metal interconnection and a second metal interconnection in the first IMD layer; removing part of the first IMD layer to form a recess between the first metal interconnection and the second metal interconnection; performing a curing process; and forming a second IMD layer on the first metal interconnection and the second metal interconnection.

Abstract: The subject invention aims to solve the problem of production of glucose accompanying the production of galactooligosaccharides after milk raw material is treated with lactase, by additionally adding transglucosidase to convert glucose to functional isomalto-oligosaccharide. The subject invention relates to a process for the production of a milk product enhanced with oligo-saccharides, characterized in that lactase and transglucosidase are used to treat milk raw materials. The subject invention further relates to the milk product of the process of the invention, whose oligo-saccharide content reaches a functional level. Human physiological effect assays confirm that the milk product increases intestinal probiotics, reduces harmful intestinal bacteria, improves the intestinal bacterial flora, reduces blood total cholesterol, reduces blood LDL cholesterol, increases blood HDL cholesterol, and improves the immunity, and may be used as low glycemic index (GI) dietary supplements.

Abstract: A sensing device including a transistor, at least one response electrode, and a selective membrane is provided. The transistor includes a gate end, a source end, a drain end, and a semiconductor layer, wherein the source end and the drain end are located on the semiconductor layer, and the gate end is located between the source end and the drain end. The at least one response electrode is disposed opposite to the gate end of the transistor and spaced apart from the transistor. The selective membrane is located on the at least one response electrode or on the transistor.

Abstract: A manufacturing method of a light source module includes the following steps. Firstly, a light emitting diode die is installed on a supporting base. Then, an electric connection between the light emitting diode die and the supporting base is established. Then, a protective glue is formed on the light emitting diode die and the supporting base. Afterwards, the supporting base is cut to produce the light source module. Since the supporting plate is not employed, the supporting plate removing process and the boning process of the conventional technology are omitted. Consequently, the manufacturing method of the present invention is effective to enhance the production quality of the light source module.

Abstract: A tracking system includes an attachable device and a tracking device. The attachable device is removably mounted on a head mounted display device. The attachable device includes an optical emitting module for emitting optical radiation. The tracking device is communicated with the attachable device. The tracking device includes an optical sensor for receiving the optical radiation. The tracking device calculates spatial coordinates of the attachable device relative to the tracking device according to the optical radiation sensed by the optical sensor. The tracking device transmits the spatial coordinates to the attachable device or the head mounted display device.

Abstract: A data storage device includes a memory device and a controller. The memory device includes multiple memory blocks. Each memory block includes multiple pages. The controller is coupled to the memory device and includes an ECC engine configured to check and correct errors that have occurred in data stored in the memory blocks. When a number of error bits in a page of one of the memory blocks exceeds a threshold, the controller is configured to add a block number of the memory block in a predetermined queue and when a garbage collection procedure has been triggered, the controller is configured to perform garbage collection on the memory block.

Abstract: The present disclosure relates to a CMOS image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A back-side deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a position within the substrate. The BDTI structure comprises a doped layer lining a sidewall surface of a deep trench and a dielectric fill layer filling a remaining space of the deep trench. By forming the disclosed BDTI structure that functions as a doped well and an isolation structure, the implantation processes from a front-side of the substrate is simplified, and thus the exposure resolution, the full well capacity of the photodiode, and the pinned voltage is improved.

Abstract: Various embodiments disclose a method for fabricating vertical transistors. In one embodiment, a structure is formed comprising at least a first substrate, an insulator layer on the substrate, a first doped layer on the insulator layer, at least one fin structure in contact with the doped layer, a dielectric layer surrounding a portion of the fin structure, a gate layer on the dielectric layer, a second doped layer in contact with the fin structure, a first contact area in contact with the second doped layer, and at least a first interconnect in contact with the first contact area. The structure is flipped bonded to a second substrate. The first substrate and the insulator layer are removed to expose the first doped layer. A second contact area is formed in contact with the first doped layer. At least a second interconnect is formed in contact with the second contact area.

Abstract: Systems and methods for dynamically selecting and adjusting energy detection thresholds (EDTs) in uncoordinated radio nodes deploying Listen Before Talk to improve throughput on shared spectrum are disclosed. The uncoordinated radio nodes dynamically adjust an EDT to avoid harmful collisions with neighboring radio nodes or otherwise improve throughput over shared spectrum. A radio node can detect a collision or radio frequency (RF) interference from a neighboring radio node. Once the collision or RF interference is detected, the EDT of the radio node is dynamically adjusted. In some cases, the collision or RF interference can be avoided by calculating a throughput of the radio node while operating on each of a plurality of EDTs and selecting the EDT predicted to result in a higher throughput. In other cases, the EDT may be dynamically adjusted based on an iterative approach which incorporates measurements of the neighboring radio node.

Abstract: A system, method and computer program product for detecting distributed denial-of-service (DDoS) attacks is provided. Current aggregated flow information for a defined period of time is analyzed. It is determined whether network flow increased above a defined flow threshold value to a second data processing system connected to a network within the defined period of time based on analyzing the current aggregated flow information. In response to determining that the network flow has increased above the defined flow threshold value to the second data processing system connected to the network within the defined period of time, it is determined that the second data processing system is under a DDoS attack.

Abstract: A semiconductor structure is provided. A first semiconductor device includes a first conductive layer formed over a first substrate; a first etching stop layer formed over the first conductive layer, and the first etching stop layer is in direct contact with the first conductive layer. A first bonding layer is formed over the first etching stop layer, and a first bonding via is formed through the first bonding layer and the first etching stop layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over the second etching stop layer and a second bonding via formed through the second bonding layer and a second etching stop layer. A bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.

Abstract: The present disclosure discloses an electronic device including an electronic apparatus and an electric connector. The electronic apparatus includes an electric connection port. The electric connection port includes a concave trench, a first and second conductive strips are disposed in the concave trench. The first conductive strip and the second conductive strip respectively extend along an extending direction of the concave trench. The electric connector includes a first and second elastic contacts which are exposed and protruded outward. When the electric connector is plugged into the electric connection port, the first elastic contact is in contact with the first conductive strip, and the second elastic contact is in contact with the second conductive strip. The electric connection port may accommodate the electric connector, so that the electric connector may be selectively plugged to any position on the electric connection port along the extending direction of the concave trench.

Abstract: A method of forming a fin field effect transistor (finFET) on a substrate includes forming a fin structure on the substrate and forming a shallow trench isolation (STI) region on the substrate. First and second fin portions of the fin structure extend above a top surface of the STI region. The method further includes oxidizing the first fin portion to convert a first material of the first fin portion to a second material. The second material is different from the first material of the first fin portion and a material of the second fin portion. The method further includes forming an oxide layer on the oxidized first fin portion and the second fin portion and forming first and second polysilicon structures on the oxide layer.

Abstract: The present disclosure provides a backlight module and a liquid crystal display using the same. The backlight module includes a light guide plate, a light source and a plurality of light extraction gratings. The light source is disposed at an end of the light guide plate. A plurality of light extraction gratings are disposed on a light emission surface of the light guide plate, and are arranged in an array. The plurality of light extraction gratings are divided into a plurality of regions arranged at equal intervals in a direction from the end of the light guide plate near the light source to another end of the light guide plate away from the of the light source, a gap between adjacent columns of two adjacent regions is a+b, where a is a gap between adjacent columns in the same region and b is a width of one light extraction grating.

Abstract: Systems and/or techniques associated with a solid-state microbattery packaging system are provided. In one example, a device comprises a substrate layer and a tape substrate layer. The substrate layer is associated with a set of solid-state microbattery components. The tape substrate comprises a releasable adhesive material and a polymer sealing material. A conductive surface associated with the set of solid-state microbattery components is disposed on the releasable adhesive material of the tape substrate layer.

Abstract: An optical photographing lens assembly includes seven lens elements, which are, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. The first lens element with positive refractive power has an object-side surface being convex in a paraxial region thereof. The third lens element has positive refractive power. The seventh lens element has an image-side surface being concave in a paraxial region thereof and including at least one convex shape in an off-axis region thereof. An object-side surface and the image-side surface of the seventh lens element are aspheric.