Abstract: Embodiments provide a method of performing a carrier switch for a device wafer, attaching a second wafer and removing a first wafer. A buffer layer is deposited over the device wafer, buffer layer reducing the topography of the surface of the device wafer. After the carrier switch a film-on-wire layer is removed from the buffer layer and then the buffer layer is at least in part removed.

Abstract: A touchpad device is to be operated by using a stylus pen, and includes a touchpad and a controller that are connected to each other. The controller is connected to an electronic device that includes a display panel, and operates in a stylus-pen mode where a handwriting area is presented on the display panel. When it is determined that a distance between the stylus pen and the touchpad is less than a preset pen-hover distance but is non-zero, the controller operates in a hover-move sub-mode where the controller outputs, based on a result of determination as to whether the electronic device is an iPad or not, two different control signals respectively for two different results of the determination to enable the electronic device to present, in the handwriting area, the cursor moving respectively in two different manners, without presenting a trace of the cursor.

Abstract: The disclosure provides a limit device and a robot using the same. The limit device comprises a first connecting member, a transmission rod and a second connecting member. The first connecting member comprising a first main body portion and two first connecting elements. The two first connecting elements are arranged at intervals. The two first connecting elements are respectively connected to the first main body. The transmission rod comprising a first end and a second end. The first end and the second end are arranged at intervals. The first end penetrates through one of the two first connecting elements. The second end penetrates through the other one of the two first connecting element. The second connecting member provided with two indexing buckles. The two indexing buckles are arranged at intervals, each of the indexing buckles comprises a first limiting groove and a second limiting groove.

Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.

Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.

Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.

Abstract: The present invention discloses an integrated choke assembly comprising: a base having a main body structure, a first protruding part and a second protruding part. A first choke has a first magnetic core and a first winding, wherein the first protruding part is arranged through the first opening of the first magnetic core so that the first choke is arranged on the upper surface of the main body structure, and the first winding is wound on the first magnetic core. A second choke has a second magnetic core and a second winding, wherein the second protruding part is arranged through the second opening of the second magnetic core so that the second choke is arranged on the lower surface of the main body structure, and the second winding is wound on the second magnetic core.

Abstract: A pellicle for an extreme ultraviolet (EUV) photomask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes a plurality of nanotubes, and each of the plurality of nanotubes is covered by a coating layer containing Si and one or more metal elements.

Abstract: A heat-assisted magnetic recording head comprises a near-field transducer (NFT). The NFT comprises a near-field emitter configured to heat a surface of a magnetic disk, and a hybrid plasmonic disk. The hybrid plasmonic disk comprises a plasmonic region and a thermal region. The plasmonic region comprises a first material or alloy that is a plasmonic material or alloy. The thermal region comprises a second material or alloy that is different than the first material or alloy.

Abstract: An optical lens includes a first lens group and a second lens group. The first lens group has at least two lenses that include at least one aspheric lens, the second lens group has at least four lenses that includes at least one aspheric lens, and a total number of lenses with refractive powers in the optical lens is smaller than nine. The first and the second lens groups include a first lens, a second lens, a third lens, a fourth lens, a fifth lens and a sixth lens in order from the magnified side to the minified side. The first lens to the sixth lens have respective refractive powers of negative, negative, positive, positive, negative and positive.

Abstract: A battery module with nano-composite coating includes at least one battery pack which includes a plurality of batteries and at least two busbars, and at least one circuit board. Each battery are connected with two electrodes. The metal barrel body of each battery is coated with a first nano coating. The plurality of the batteries are connected to the two busbars by a plurality of wires, each busbar and the electrodes of the plurality of the batteries exposed outside are coated with a second nano coating. The at least one circuit board is connected to each busbar. The at least one circuit board is coated with a third nano coating. The plurality of the wires are used for being soldered with each battery, each busbar and the at least one circuit board of which soldering positions are coated with a fourth nano coating.

Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises a substrate and a wafer disposed on the substrate. The wafer includes a p-doped layer disposed on the substrate; a first diode disposed on the p-doped layer; a second diode disposed on the p-doped layer; a third diode disposed on the p-doped layer; and a dielectric layer disposed on the substrate and covering the first, second, and third diodes. The first, second, and third diodes are disposed side by side.

Abstract: A method includes depositing a photoresist layer over a target layer, the photoresist layer comprising an organometallic material; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation; developing the exposed photoresist layer to form a photoresist pattern; forming a spacer on a sidewall of the photoresist pattern; removing the photoresist pattern; after removing the photoresist pattern, patterning the target layer through the spacer.

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.

Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.

Abstract: A method for manufacturing a package structure includes: providing a first electrical element and a second electrical element on a surface of a first carrier, wherein the second electrical element is shifted with respect to the first electrical element; and moving the first electrical element along at least one direction substantially parallel with the surface of the first carrier until a first surface of the first electrical element is substantially aligned with a first surface of the second electrical element from a top view.

Abstract: The present invention discloses a pivot mechanism and an electronic device applying the same. The electronic device includes a first body and a second body that are individually independent. The pivot mechanism is configured to turn the second body relative to the first body so that the second body may be in an open position or a closed position. The pivot mechanism includes a base and a pivot structure. The base includes a first connecting member and a second connecting member, which are fixedly connected on a top portion and a peripheral portion of the first body, respectively. Extension directions of the first second connecting members are perpendicular to each other. The pivot structure is disposed on the first connecting member, and is fixedly connected to the second body. Accordingly, stable joining of the first second bodies is ensured, and turning stability and smoothness are at the same time satisfied.

Abstract: A semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. The low-k dielectric layer is disposed over the substrate. The cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer. The conductive layer is disposed in the cap layer and the low-k dielectric layer.