Abstract: A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.

Abstract: A styrene-modified polyethylene-based expandable resin particle is provided, which comprise a polyethylene resin and a polystyrene resin, wherein a content of the polyethylene resin ranges from 5 wt % to 30 wt % and a content of the polystyrene resin ranges from 70 wt % to 95 wt % based on 100 wt % of the polyethylene resin and the polystyrene resin, wherein the expandable resin particle comprises a xylene insoluble matter and an acetone insoluble matter, and a ratio of a content of the xylene insoluble matter to a content of the acetone insoluble matter ranges from 0.01 to 5. In addition, an expanded resin particle and a foamed resin molded article prepared by the aforesaid expandable resin particle are also provided. Furthermore, a method for manufacturing the aforesaid expandable resin particle is also provided.

Abstract: A polymer and a light-emitting device employing the same are provided. The polymer includes a first repeat unit with a structure represented by Formula (I): wherein the definitions of R1, R2, A1, A2, A3, and Z1 and n are as defined in the specification. At least one of A1, A2, and A3 is not hydrogen.

Abstract: A crystal growth furnace system, including an external heating module, a furnace, a first driven device, a second driven device, and a control device, is provided. The furnace is movably disposed in the external heating module. The first driven device drives the furnace to move along an axis. The second driven device drives the furnace to rotate around the axis. The control device is electrically connected to the first driven device, the second driven device, and the external heating module.

Abstract: A crystal growth method, including providing a seed crystal in a crystal growth furnace, and forming a crystal on the seed crystal along a first direction after multiple time points, is provided. The crystal includes multiple sub-crystals stacked along the first direction, a corresponding one of the sub-crystals is formed at each of the time points, and the sub-crystals include multiple end surfaces away from the seed crystal, so that a difference value of maximum temperatures of any two of the end surfaces is less than or equal to 20 degrees. A wafer is also provided.

Abstract: A Quality of Experience (QoE) optimization system and method are provided. An electronic device inputs key performance indicators (KPIs) and system control parameters collected from a core network, a base station and a user equipment (UE) into a QoE optimization model. The QoE optimization model then optimizes the system control parameters based on the KPIs and a user QoE fed back from the UE to output optimized system control parameters. Furthermore, a strategy emulator controls at least one of a base station emulator and a UE emulator, so as to emulate the QoE optimization model using the at least one of the base station emulator and the UE emulator. Non-real-time optimization adjustments to the QoE optimization model are made based on the result of the emulation performed by the at least one of the base station emulator and the UE emulator.

Abstract: A silicon carbide crystal includes a seed layer, a bulk layer, and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer, and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.

Abstract: A high-mobility resource allocation system and method for simulated users are provided, including a base station, antennas and a simulated mobile-user generator. The simulated mobile-user generator organizes a test field by taking the base station as the circle center, and measures and records multiple channel information based on the detection signals of the antennas. The machine learning module is used to perform simulation channel training according to channel information to generate simulated user channels that approximates real-world scenarios. A mobile-user organizing module organizes multiple simulated mobile users and their mobile channel information in the test field based on the simulated user channel, generates multiple simulated mobile user signals, and uses a resource-allocation optimizing module based on simulated mobile user signals, channel interference information upon moving, etc. to maximize the number of simulated mobile users while considering the quality of service.

Abstract: A Quality of Experience (QoE) optimization system and method are provided. An electronic device inputs key performance indicators (KPIs) and system control parameters collected from a core network, a base station and a user equipment (UE) into a QoE optimization model. The QoE optimization model then optimizes the system control parameters based on the KPIs and a user QoE fed back from the UE to output optimized system control parameters. Furthermore, a strategy emulator controls at least one of a base station emulator and a UE emulator, so as to emulate the QoE optimization model using the at least one of the base station emulator and the UE emulator. Non-real-time optimization adjustments to the QoE optimization model are made based on the result of the emulation performed by the at least one of the base station emulator and the UE emulator.

Abstract: A high-mobility resource allocation system and method for simulated users are provided, including a base station, antennas and a simulated mobile-user generator. The simulated mobile-user generator organizes a test field by taking the base station as the circle center, and measures and records multiple channel information based on the detection signals of the antennas. The machine learning module is used to perform simulation channel training according to channel information to generate simulated user channels that approximates real-world scenarios. A mobile-user organizing module organizes multiple simulated mobile users and their mobile channel information in the test field based on the simulated user channel, generates multiple simulated mobile user signals, and uses a resource-allocation optimizing module based on simulated mobile user signals, channel interference information upon moving, etc. to maximize the number of simulated mobile users while considering the quality of service.

Abstract: A system for synthesizing signal of user equipment and a method thereof are provided. The system includes a physical channel modeler and a physical channel training module. The physical channel modeler receives geo information of a field under test of and a sparse real physical field channel feature to build a physical channel model. The physical channel modeler estimates a plurality of predefined positions of the geo information to obtain a plurality of simulated physical field channel features corresponding to the predefined positions. The physical channel training module receives and performs training on the geo information, the sparse real physical field channel feature and the simulated physical field channel features by using an AI algorithm to perform an inference of a fully real physical field channel feature.

Abstract: An AI decision based multiple telecommunication endpoints system is provided, including a telecommunication endpoint device and an artificial intelligence decision controller. The telecommunication endpoint device performs a communication test with the radio frequency communication device under test. The artificial intelligence decision controller is electrically connected to the telecommunication terminal device to control the communication test, and performs an efficiency analysis on the result of the communication test, and generates a decision instruction according to the result of the efficiency analysis.

Abstract: A touch display device, including a display panel and a touch panel, is provided. The touch panel has a first display area, a second display area, and a connection area located therebetween, and includes a substrate, first touch signal lines, second touch signal lines, first electrode lines, second electrode lines, and first connection lines. The first and second touch signal lines are located on the first display area. The first and second electrode lines are located on the second display area. The first connection lines are located on the connection area. The first touch signal lines, the first electrode lines, and the first connection lines extend along a first direction. The first connection lines are electrically connected to the first touch signal lines and at least part of the first electrode lines. The second touch signal lines and the second electrode lines extend along a second direction.

Abstract: A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 1012 ?·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.

Abstract: A system for synthesizing signal of user equipment and a method thereof are provided. The system includes a physical channel modeler and a physical channel training module. The physical channel modeler receives geo information of a field under test of and a sparse real physical field channel feature to build a physical channel model. The physical channel modeler estimates a plurality of predefined positions of the geo information to obtain a plurality of simulated physical field channel features corresponding to the predefined positions. The physical channel training module receives and performs training on the geo information, the sparse real physical field channel feature and the simulated physical field channel features by using an AI algorithm to perform an inference of a fully real physical field channel feature.

Abstract: A system and method of emulating radio device includes a multi-radio unit, a multi-radio unit controller and an under-test radio system. The multi-radio unit includes multiple radio circuits, in which the radio circuits are configured to generate multiple radio emulated signals. The multi-radio unit controller coupled to the multi-radio unit is configured to generate multiple control signals to the multi-radio unit, in which the control signals are configured to control the radio emulated signals sent by the multi-radio unit. The under-test radio system is configured to receive the radio emulated signals generated by the multi-radio unit, and configured to generate multiple data corresponding to the radio emulated signals.

Abstract: A silicon carbide crystal and a manufacturing method thereof are provided. The silicon carbide crystal includes an N-type seed layer, a barrier layer, and a semi-insulating ingot, which are sequentially stacked and are made of silicon carbide. The N-type seed layer has a resistivity within a range of 0.01-0.03 ?·cm. The barrier layer includes a plurality of epitaxial layers sequentially formed on the N-type seed layer by an epitaxial process. The C/Si ratios of the epitaxial layers gradually increase in a growth direction away from the N-type seed layer. A nitrogen concentration of the silicon carbide crystal gradually decreases from the N-type seed layer toward the semi-insulating ingot by a diffusion phenomenon, so that the semi-insulating crystal has a resistivity larger than 107 ?·cm.

Abstract: A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.

Abstract: A silicon carbide crystal and a method for manufacturing the same are disclosed. The silicon carbide crystal includes a seed layer, a bulk layer, and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer, and the stress buffering structure are each formed with a dopant that cycles between high and low concentration. Therefore, the crystal defects can be significantly reduced.

Abstract: A structure of micro-electro-mechanical-system (MEMS) microphone package includes a packaging substrate and an integrated circuit disposed on the packaging substrate. In addition, a MEMS microphone is disposed on the packaging substrate, wherein the MEMS microphone is electrically connected to the integrated circuit. A conductive adhesion layer is disposed on the packaging substrate, surrounding the integrated circuit and the MEMS microphone. A cap structure has a bottom part being adhered to the conductive adhesion layer. An underfill layer is disposed on the packaging substrate, covering an outer side of the conductive adhesion layer.