Abstract: A method of forming a semiconductor device includes: forming a dummy gate structure over a nanostructure, where the nanostructure overlies a fin that protrudes above a substrate, where the nanostructure comprises alternating layers of a first semiconductor material and a second semiconductor material; forming openings in the nanostructure on opposing sides of the dummy gate structure, the openings exposing end portions of the first semiconductor material and end portions of the second semiconductor material; recessing the exposed end portions of the first semiconductor material to form first sidewall recesses; filling the first sidewall recesses with a multi-layer spacer film; removing at least one sublayer of the multi-layer spacer film to form second sidewall recesses; and forming source/drain regions in the openings after removing at least one sublayer, where the source/drain regions seal the second sidewall recesses to form sealed air gaps.

Abstract: A method includes patterning a trench and depositing a first insulating material along sidewalls and a bottom surface of the trench using a conformal deposition process. Depositing the first insulating material includes forming a first seam between a first portion of the first insulating material on a first sidewall of the trench and a second portion of the first insulating material on a second sidewall of the trench. The method further includes etching the first insulating material below a top of the trench and depositing a second insulating material over the first insulating material and in the trench using a conformal deposition process. Depositing the second insulating material comprises forming a second seam between a first portion of the second insulating material on the first sidewall of the trench and a second portion of the second insulating material on a second sidewall of the trench.

Abstract: A mouse device includes a lateral pressure sensing unit and a base unit having a base seat, a housing, and an inner space cooperatively defined by the base seat and the housing. The base seat is elongated in a front-rear direction, and includes a bottom face portion and an extension face portion surrounding and extending upwardly from the bottom face portion, and having spaced apart first and second lateral sections. The housing surrounds the base seat, extends upwardly from the extension face portion, and includes an operating portion extending upwardly from the first lateral section and having front, rear, upper, and lower pressing regions. The lateral pressure sensing unit is located in the inner space, is adjacent to the front, rear, upper and lower pressing regions, and is triggered upon operation on the operating portion.

Abstract: A wafer grinding parameter optimization method and an electronic device are provided. The method includes the following. A natural frequency of a grinding wheel spindle of wafer processing equipment is obtained, and a grinding stability lobe diagram is generated accordingly. A grinding speed is selected based on a speed range of the grinding wheel spindle. Multiple grinding parameter combinations are determined based on the grinding speed. Multiple grinding simulation result combinations corresponding to the grinding parameter combinations are generated. A specific grinding parameter combination is selected based on each of the grinding simulation result combinations, and the wafer processing equipment is set accordingly.

Abstract: A semiconductor device is provided. The semiconductor device comprises a first semiconductor die comprising a first capacitor, and a second semiconductor die in contact with the first semiconductor die and comprises a diode. The first semiconductor die and the second semiconductor die are arranged along a first direction, and a diode is configured to direct electrons accumulated at the first capacitor to a ground.

Abstract: An image sensor includes an array of image pixels and black level correction (BLC) pixels. Each BLC pixel includes a BLC pixel photodetector, a BLC pixel sensing circuit, and a BLC pixel optics assembly configured to block light that impinges onto the BLC pixel photodetector. Each BLC pixel optics assembly may include a first portion of a layer stack including a vertically alternating sequence of first material layers having a first refractive index and second material layers having a second refractive index. Additionally or alternatively, each BLC pixel optics assembly may include a first portion of a layer stack including at least two metal layers, each having a respective wavelength sub-range having a greater reflectivity than another metal layer. Alternatively or additionally, each BLC pixel optics assembly may include an infrared blocking material layer that provides a higher absorption coefficient than color filter materials within image pixel optics assemblies.

Abstract: An integrated circuit includes a first active region of a first set of transistors of a first type, a second active region of a second set of transistors of the first type, a third active region of a third set of transistors of the first type, a fourth active region of a fourth set of transistors of the first type and a fifth active region of a fifth set of transistors of a second type. The first, second, fourth and fifth active region have a first width in a second direction, and are on a first level. The third active region is on the first level, and has a second width different from the first width. The second active region is adjacent to the first boundary, and is separated from the first active region in the second direction. The fourth active region is adjacent to the second boundary.

Abstract: A memory chip includes a first decoding device and a memory device. The first decoding device is configured to generate multiple word line signals. The memory device is configured to generate a third data signal based on a first data signal and a second data signal. The memory device includes a first memory circuit and a second memory circuit. The first memory circuit is configured to generate the first data signal at a first node according to the word line signals during a first period. The second memory circuit is configured to generate the second data signal at a second node different from the first node according to the word line signals during a second period after the first period. A method of operating a memory chip is also disclosed herein.

Abstract: A method of forming semiconductor devices having improved work function layers and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a gate dielectric layer on a channel region over a semiconductor substrate; depositing a first p-type work function metal on the gate dielectric layer; performing an oxygen treatment on the first p-type work function metal; and after performing the oxygen treatment, depositing a second p-type work function metal on the first p-type work function metal.

Abstract: There is provided an optical sensor package including a substrate, a base layer, an optical detection region, a light source and a light blocking wall. The base layer is arranged on the substrate. The light detection region and the light source are arranged on the base layer. The light blocking wall is arranged on the base layer, and located between the light detection region and the light source to block light directly propagating from the light source to the light detection region.

Abstract: In one or more embodiments, a fan circuit may be configured with an input of a first amplifier coupled to a revolution indicator associated with a fan; an output of the first amplifier coupled to an input of a second amplifier; and a power supply input of the second amplifier coupled to a first contact of a first connector. In one or more embodiments, the first contact of the first connector may be coupled to a first contact of a second connector to drive a resistive load coupled to the first contact of the second connector; a second contact of the first connector may be coupled to a second contact of the second connector to provide a reference voltage to the second amplifier; and the second amplifier may provide amplified signals to the first contact of the first connector based at least on signals received from the revolution indicator.

Abstract: Disclosed is a reusable actuator for use with a drug container including a stopper comprising a container having a closed end, an open end, and a sidewall extending therebetween in a longitudinal direction, an electrode disposed inside the container for use in generating a gas, an actuating element disposed at and closing the open end of the container, the actuating element and the container defining an actuator interior, wherein the actuating element is movable relative to the container in the longitudinal direction by a gas pressure of the gas in the actuator interior, such that the actuating element applies a force to the stopper to cause a drug delivery from the drug container, and a retracting mechanism for use in removing the gas to assist the actuating element's retraction for reuse.

Abstract: Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.

Abstract: Disclosed is a display substrate including a base substrate, which includes first and second display regions, and at least one first data line. The first display region includes first and second sub-display regions located on opposite sides of the second display region along a first direction; and a third sub-display region located on at least one side of the second display region along a second direction. The first data line includes a first sub-data line located in the first sub-display region and connected with a pixel circuit of the first sub-display region, a second sub-data line located in the second sub-display region and connected with a pixel circuit of the second sub-display region, and a third sub-data line which is connected with the first and second sub-data lines, located in the third sub-display region, and connected with at least one second pixel circuit of the third sub-display region.

Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.

Abstract: A wearable device includes a conducting frame, a circuit board, and a grounding member. The conducting frame includes a first part and a second part that are separated. The circuit board has a system grounding surface and is disposed inside the conducting frame. The grounding member is disposed inside the conducting frame and connected to the first part. The first part and the grounding member are formed as a first antenna. The first part has a first feeding terminal. The grounding member has a first grounding terminal, and the first grounding terminal is connected to the system grounding surface of the circuit board. The second part is formed as a second antenna. The second antenna has a second feeding terminal, a second grounding terminal, and a third grounding terminal. The second and the third grounding terminals are connected to the system grounding surface of the circuit board.

Abstract: A particle removal method for removing particles on the backside of a reticle is provided. The method includes disposing the reticle on a reticle holder. In addition, the method includes moving a baffle defining an enclosed area that encompasses a particle to be removed on a backside of the reticle. The method further includes spraying, by a solution spraying module of a particle removal device, a solution onto the particle. The method further includes sucking, by a sucking module of the particle removal device, the solution on the reticle with the particle. The method further includes emitting, by the particle removal device, a gas onto the backside of the reticle for drying the backside.

Abstract: A violation checking method includes generating a violation log report for a design, classifying violation logs in the violation log report into high-risk logs and low-risk logs by a machine learning model, reviewing the high-risk logs, and modifying the design if at least one bug is identified in the high-risk logs.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric disposed around the first nanostructure; a second high-k gate dielectric being disposed around the second nanostructure; and a gate electrode over the first high-k gate dielectric and the second high-k gate dielectric. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises a first portion of a p-type work function metal filling an area between the first high-k gate dielectric and the second high-k gate dielectric.

Abstract: Disclosed is a diamine compound represented by Formula (1), in which R1, R2, R3, R4, R5, X1, X2, X3, X4, m, n, a, b, c, and d are as defined herein. Also disclosed are a method for manufacturing the diamine compound, a composition including the diamine compound having a (chain alkoxy-methylene) phenyl group or a (hydroxyl-methylene) phenyl group, and a polymer including the (chain alkoxy-methylene) phenyl group or the (hydroxyl-methylene) phenyl group.