Patents by Inventor An-Chi Li
An-Chi Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11769652Abstract: Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.Type: GrantFiled: July 29, 2019Date of Patent: September 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jr-Sheng Chen, An-Chi Li, Shih-Che Huang, Chih-Hsien Hsu, Zhi-Hao Huang, Ming Chih Wang, Yu-Pei Chiang, Chun Yan Chen
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Patent number: 11615946Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.Type: GrantFiled: May 24, 2019Date of Patent: March 28, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jr-Sheng Chen, An-Chi Li, Shih-Che Huang, Chih-Hsien Hsu, Zhi-Hao Huang, Alex Wang, Yu-Pei Chiang, Chun Yan Chen
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Publication number: 20220359168Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Inventors: Jr-Sheng CHEN, An-Chi LI, Shih-Che HUANG, Chih-Hsien HSU, Zhi-Hao HUANG, Alex WANG, Yu-Pei CHIANG, Chun Yan Chen
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Publication number: 20220359165Abstract: Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Inventors: Jr-Sheng CHEN, An-Chi LI, Shi-Che HUANG, Chih-Hsien HSU, Zhi-Hao HUANG, Ming Chih WANG, Yu-Pei CHIANG, Chun Yan CHEN
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Patent number: 10964547Abstract: A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.Type: GrantFiled: November 25, 2019Date of Patent: March 30, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin-Han Meng, Chih-Hsien Hsu, Jr-Sheng Chen, An-Chi Li, Lin-Ching Huang, Yu-Pei Chiang
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Publication number: 20200098583Abstract: A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.Type: ApplicationFiled: November 25, 2019Publication date: March 26, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin-Han Meng, Chih-Hsien Hsu, Jr-Sheng Chen, An-Chi Li, Lin-Ching Huang, Yu-Pei Chiang
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Publication number: 20200075294Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.Type: ApplicationFiled: May 24, 2019Publication date: March 5, 2020Inventors: Jr-Sheng CHEN, An-Chi Li, Shih-Che Huang, Chih-Hsien Hsu, Zhi-Hao Huang, Alex Wang, Yu-Pei Chiang, Chen-Chun Yan
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Publication number: 20200043705Abstract: Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.Type: ApplicationFiled: July 29, 2019Publication date: February 6, 2020Inventors: Jr-Sheng CHEN, An-Chi Li, Shih-Che Huang, Chih-Hsien Hsu, Zhi-Hao Huang, Alex Wang, Yu-Pei Chiang, Chen-Chun Yan
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Patent number: 10529578Abstract: A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.Type: GrantFiled: October 30, 2018Date of Patent: January 7, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin-Han Meng, Chih-Hsien Hsu, Jr-Sheng Chen, An-Chi Li, Lin-Ching Huang, Yu-Pei Chiang
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Publication number: 20190148161Abstract: A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.Type: ApplicationFiled: October 30, 2018Publication date: May 16, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin-Han Meng, Chih-Hsien Hsu, Jr-Sheng Chen, An-Chi Li, Lin-Ching Huang, Yu-Pei Chiang