Abstract: The present disclosure provides a wavelength conversion device including a first thermal conductive plate, a wavelength conversion layer and a second thermal conductive plate. The wavelength conversion layer is disposed on the first side of the first thermal conductive plate and configured to perform a wavelength conversion. The second thermal conductive plate is disposed on the second side of the first thermal conductive plate. The first thermal conductive plate and the second thermal conductive plate are combined to conduct the heat generated by the wavelength conversion layer during the wavelength conversion. Since the thermal conductivity coefficients of the at least two thermal conductive plates are increased along the heat transferring path, it is advantageous to minimize the thermal resistance of the heat transferring path.

Abstract: A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.

Abstract: A package structure including a reconstructed wafer, a heat dissipation substrate, a semiconductor device, and a fixing mechanism is provided. The heat dissipation substrate is disposed on a side of the reconstructed wafer and includes an inlet, a base plate located between the inlet and the reconstructed wafer, and a connection member located and coupled between the inlet and the base plate. The connection member has an inclined fluid channel that descends from the inlet to the base plate. The semiconductor device is disposed on another side of the reconstructed wafer, wherein the heat dissipation substrate and the semiconductor device are respectively located on opposite sides of the reconstructed wafer. The fixing mechanism fixes the reconstructed wafer, the heat dissipation substrate, and the semiconductor device together.

Abstract: A wavelength conversion device includes a substrate, a reflective layer, a phosphor layer and a thermal conductive layer. The substrate has a surface. The reflective layer is disposed on the surface of the substrate. The phosphor layer is disposed on the reflective layer and has a conversion region configured to perform a wavelength conversion. The thermal conductive layer is disposed on the surface of the substrate and thermally directly connected to the conversion region for conducting a heat generated at the conversion region during the wavelength conversion. The thermal resistance of the reflective layer is high and causes heat in the conversion region to accumulate. By disposing the thermal conductive layer adjacent to a side of the phosphor layer, the thermal conductive layer is thermally directly connected to the conversion region, so that the heat generated at the conversion region during the wavelength conversion is efficiently dissipated.

Abstract: A wavelength conversion device includes a wavelength conversion plate, a reflective layer, a driving component and a thermal conductive layer. The wavelength conversion plate includes a lateral edge, at least one surface and a conversion region. The reflective layer is disposed on the surface of the wavelength conversion plate. The driving component is disposed near the lateral edge of the wavelength conversion plate and configured to displace the wavelength conversion plate. The thermal conductive layer is disposed on the surface of the wavelength conversion plate and thermally connected to the conversion region for conducting heat generated by the conversion region during a wavelength conversion. By disposing the thermal conductive layer on the surface of the wavelength conversion plate, the thermal conductive layer is thermally directly connected to the conversion region, so that the heat generated at the conversion region during the wavelength conversion is efficiently dissipated.

Abstract: A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.

Abstract: The invention relates to crystalline forms of the bis-HCI salt of a compound represented by Structural Formula 1, and pharmaceutical compositions comprising crystalline forms of the bis-HCL salt of a compound represented by Structural Formula 1 described herein. The crystalline forms of the bis-HCl salt of a compound of Structural Formula 1 and compositions comprising the crystalline forms of the compound of Structural Formula 1 provided herein, in particular, crystalline Form I, crystalline Form J, crystalline Form A, and crystalline Form B, or mixtures thereof, can be incorporated into pharmaceutical compositions, which can be used to treat various disorders. Also described herein are methods for preparing the crystalline forms (e.g., Forms I, J, B and A) of the bis-HCI salt of a compound represented by Structural Formula 1.

Abstract: Provided are compositions, optionally pharmaceutical compositions, that include a plurality of exosomes generated from stem cells, optionally ESCs and/or iPSCs, that have been modified to express a granulocyte-macrophage colony stimulating factor (GM-CSF) polypeptide, optionally a human GM-CSF polypeptide. Also provided are methods for employing the presently disclosed compositions for preventing and/or inhibiting tumor growth in subjects in need thereof, for preventing and/or inhibiting metastases in subject in need thereof, for inducing anti-tumor immune responses in subjects, and uses of the presently disclosed compositions for prevention and/or treatment of tumors and/or cancers and for the preparation of medicaments for treatment of tumors and/or cancers.

Abstract: A method for machine learning deployment that comprises steps of: determining a machine learning algorithm based on a training dataset; using the machine learning algorithm to build a machine learning model based on the training dataset; creating an executable file corresponding to the machine learning model, the executable file containing programming information for a programmable circuit; and loading the executable file into the programmable circuit so as to program the programmable circuit to allow the programmable circuit to use the machine learning model to process data.

Abstract: Glasses include a glass upper frame, a glass lower frame, the lens, and a bridge. Each of two ends of the glass upper frame dents to form a downward-opening receiving cavity of predetermined depth. Each of two ends of the glass lower frame dents to form a receiving cavity of predetermined depth. Magnetic elements are fitted snugly into the receiving cavities. An elevated portion is centrally disposed at the glass lower frame and corresponds in position to a slot dentedly-formed at the bridge such that a complete stop groove is formed along the glass lower frame when the bridge is fitted to the glass lower frame. The bottom edge of the glass upper frame dents to form a groove. Each of the two ends of the glass upper frame dents to form an inward-opening dented portion. The groove, dented portions, stop groove, and bridge jointly hold the lens.

Abstract: A method to improve the efficiency of coding high-dynamic range (HDR) signals in a dual-layer system is presented. A piece-wise linear, two-segment, inter-layer predictor is designed where base-layer codewords larger than a highlights threshold (Sh) are all mapped to a constant value. Given a target bit rate for the enhancement layer, which can be expressed as a percentage (?) of the bit rate of the base layer, an optimal highlights threshold is derived by computing estimated bit rates for the base and enhancement layers based on pixel complexity measures of pixels in the input HDR signal and the threshold value, and by minimizing an optimization criterion.

Abstract: A display module for use as a front dashboard, a center console, a passenger entertainment display, or an instrument panel is described. The display module includes a display assembly that is joined to a cover lens via an optically clear adhesive layer. The display assembly is arranged as a flat planar device, and the cover lens is arranged as a curved planar surface that includes an inner laminate sheet that is joined to an outer laminate sheet via a second adhesive layer.

Abstract: The invention relates to a device and an according method for hybrid optoacoustic and ultrasonographic imaging of an object (1), comprising an irradiation unit (2, 3) for irradiating the object (1) with electromagnetic radiation, in particular light, and a transducer unit (4) comprising a plurality of transducer elements (5), the transducer elements (5) being configured to emit ultrasound waves impinging on the object (1) and to detect ultrasound waves which are reflected and/or transmitted by the object (1) upon impinging on the object (1), and to detect ultrasound waves which are generated in the object (1) upon irradiation with electromagnetic radiation, wherein the transducer elements (1) are arranged along a curved line, in particular a concave line, or a curved surface, in particular a concave surface.

Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.

Abstract: Disclosed are cyclopentene compounds for use as inhibitors of gamma-aminobutyric acid (GABA) aminotransferase (AT) and/or ornithine aminotransferase (OAT). The disclosed cyclopentene compounds include 3-carbon substituted 4-aminocyclopent-1-ene-carboxylic acid compounds which may be formulated in pharmaceutical composition for treating diseases and disorders associated with GABA-AT and/or OAT activity, including epilepsy, addiction, and hepatocellular carcinoma (HCC).

Abstract: One example includes a system. The system includes an error injection system. The error injection system includes an error injector to store a programmable control structure to define a memory error. The error injector being further used to inject the memory error into a respective one of a plurality of memory storage elements associated with a memory system at a predetermined address via an address controller and to determine if the memory error at the predetermined address associated with the respective one of the plurality of memory storage elements is corrected via error-correcting code (ECC) memory associated with the memory system.

Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.

Abstract: A heat-exchange apparatus is provided, including a first heat exchanger, a second heat exchanger, a third heat exchanger and a fourth heat exchanger. The first heat exchanger is thermally separated from the second heat exchanger. The third heat exchanger is thermally connected to the first heat exchanger. The fourth heat exchanger is thermally connected to the second heat exchanger, wherein a first air flow passes through the first heat exchanger and the second heat exchanger to be divided into a first divergent flow and a second divergent flow, the first divergent flow flows on a surface of the first heat exchanger, the second divergent flow flows on a surface of the second heat exchanger, the first divergent flow does not flow on the surface of the second heat exchanger, and the second divergent flow does not flow on the surface of the first heat exchanger.

Abstract: A layout method comprises selecting a first and a second layout devices in a layout of an integrated circuit. The second layout device abuts the first layout device at a boundary therebetween. The layout method also comprises disposing a first and a second conductive paths across the boundary, and respectively disposing a first and a second cut layers on the first and second conductive paths nearby the boundary. The layout method also comprises disconnecting the first layout device from the second layout device by cutting the first conductive path into two conductive portions according to a first position of the first cut layer and cutting the second conductive path into two conductive portions a second position of the second cut layer. The layout method also comprises moving the first cut layer to align with the second cut layer.

Abstract: A heat-exchange apparatus is provided, including a first heat exchanger, a second heat exchanger, a third heat exchanger and a fourth heat exchanger. The first heat exchanger is thermally separated from the second heat exchanger. The third heat exchanger is thermally connected to the first heat exchanger. The fourth heat exchanger is thermally connected to the second heat exchanger, wherein a first air flow passes through the first heat exchanger and the second heat exchanger to be divided into a first divergent flow and a second divergent flow, the first divergent flow flows on a surface of the first heat exchanger, the second divergent flow flows on a surface of the second heat exchanger, the first divergent flow does not flow on the surface of the second heat exchanger, and the second divergent flow does not flow on the surface of the first heat exchanger.