Abstract: A semiconductor structure is presented including a first memory array and a second memory array directly connected to the first memory array by nanosheet stacks and backside contacts. The first and second memory arrays collectively define a double-sided memory array on a complementary metal oxide semiconductor (CMOS) wafer. The nanosheet stacks separate the first memory array from the second memory array so that two different types of memory devices are integrated together into a single CMOS chip.

Abstract: An optical system is provided. The optical system includes a light source assembly, a light guiding element, and a first optical assembly. The light source assembly is used for generating first light and second light. The light guiding element is used for transporting the first light and the second light. The first optical assembly is disposed between the light guiding element and the light source assembly and used for transporting the first light and the second light. Wavelengths of the first light and the second light are different.

Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.

Abstract: A method of correcting a misalignment of a wafer on a wafer holder and an apparatus for performing the same are disclosed. In an embodiment, a semiconductor alignment apparatus includes a wafer stage; a wafer holder over the wafer stage; a first position detector configured to detect an alignment of a wafer over the wafer holder in a first direction; a second position detector configured to detect an alignment of the wafer over the wafer holder in a second direction; and a rotational detector configured to detect a rotational alignment of the wafer over the wafer holder.

Abstract: A universal wiper base assembly structure includes a fastening base, a rear base, a combination base, and an outer cover. The fastening base includes a main body and a decorative cover. The main body has a coupling hole, an insertion slot, a protruding platform, a positioning protrusion, a first shaft hole, two limiting arc surfaces, and multiple engagement grooves. The decorative cover has a fastening slot. The rear base includes two contact blocks, a top abutting block, and two hooks. The combination base includes two side plates, a connection plate, an open groove and a second shaft hole. The outer cover includes a fastening block, an opening, and a third shaft hole. Accordingly, a variety of wiper driving arms may be positioned to the universal wiper base assembly structure, so as to improve the convenience in assembling and reduce an overall cost.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. The method further comprises forming a gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain structure and the second source/drain structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.

Abstract: Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.

Abstract: Trenches in which to form a back side isolation structure for an array of CMOS image sensors are formed by a cyclic process that allows the trenches to be kept narrow. Each cycle of the process includes etching to add a depth segment to the trenches and coating the depth segment with an etch-resistant coating. The following etch step will break through the etch-resistant coating at the bottom of the trench but the etch-resistant coating will remain in the upper part of the trench to limit lateral etching and substrate damage. The resulting trenches have a series of vertically spaced nodes. The process may result in a 10% increase in photodiode area and a 30-40% increase in full well capacity.

Abstract: The design and structure of a fluidic concentration metering device with a full dynamic range utilizing micro-machined thermal time-of-flight sensing elements is exhibited in this disclosure. With an additional identical sensing chip but packaged at the different locations in the measurement fluidic chamber with a closed conduit, the device can simultaneously measure the fluidic concentration and the fluidic flowrate. With a temperature thermistor integrated on the same micro-machined thermal sensing chip, the disclosed device will be able to provide the key processing parameters for the fluidic applications.

Abstract: An installing module includes a seat bracket, a plurality of lower gaskets, a device bracket and an upper gasket. The seat bracket includes a first locking plate and a second locking plate locked to each other. The first locking plate includes a first concave and the second locking plate includes a second concave corresponding to the first concave. The lower gaskets are respectively disposed on the first concave and the second concave. The lower gaskets face each other and jointly define a lower assembly hole and are disposed on a lower side of a head-support fixer of a car seat. The device bracket is locked to the seat bracket and an electronic device is pivotally coupled to the device bracket. The upper gasket is disposed between the device bracket and the head-support fixer, and the head-support fixer is clamped between the upper gasket and the lower gaskets.

Abstract: A method of process technology assessment is provided. The method includes: defining a scope of the process technology assessment, the scope comprising an original process technology and a first process technology; modeling a first object in an integrated circuit into a resistance domain and a capacitance domain; generating a first resistance scaling factor and a first capacitance scaling factor based on the modeling, the original process technology, and the first process technology; and utilizing, by an electronic design automation (EDA) tool, the first resistance scaling factor and the first capacitance scaling factor for simulation of the integrated circuit.

Abstract: A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.

Abstract: A working fluid recovery device includes an air moving unit, a water removal unit, a working fluid recovery unit, a condenser, and a working fluid collection tank. The air moving unit is configured to suck in a mixed gas including a non-condensable gas, a steam and a vapor phase of working fluid. The water removal unit is connected to the air moving unit, and configured to remove the steam. The working fluid recovery unit is connected to the water removal unit, and configured to recover the vapor phase of the working fluid and exhaust the non-condensable gas. The condenser is connected to the working fluid recovery unit, and configured to condense the vapor phase of the working fluid into a liquid phase of the working fluid. The working fluid collection tank is connected to the condenser, and configured to store the liquid phase of the working fluid.

Abstract: An electronic device has sensors. More particularly, the electronic device is a small form factor electronic device such as earbuds, styluses, or electronic pencils, earphones, and so on. In some implementations, one or more touch sensors and one or more force sensors are coupled to a flexible circuit. In various implementations, the touch sensor and the force sensor are part of a single module controlled by a single controller. In a number of implementations, the flexible circuit is laminated to one or more portions of an interior surface of the electronic device.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: There is provided a smoke detector including a first light source, a second light source surface, a light sensor and a processor. The light sensor receives reflected light when the first light source and the second light source emit light, and generates a first detection signal corresponding to light emission of the first light source and a second detection signal corresponding to light emission of the second light source. The processor distinguishes smoke and floating particles according to a similarity between the first detection signal and the second detection signal.

Abstract: A chassis quick release device includes a housing including a base provided with a sliding channel, a compression space, and accommodating space, a rotating space and a shaft in the rotating space and covered with a cover, a locking block linearly movably set in the accommodating space and providing a guide groove, a guide chamber, a receiving groove and an elastic member set in the receiving groove, a locking member having a shaft hole coupled to the shaft, a rotary reset member positioned on the shaft, resisting edge located at one end thereof that can rotate and protrude from the housing and a locking edge located at the other end thereof, and an operating handle including a rod body positioned in the sliding channel, the guide groove and the guide chamber and mounted with a grp and having a locking portion stopped against the guide chamber.

Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.

Abstract: The present disclosure provides an optical element driving mechanism, which includes a movable part, a fixed assembly, and a driving assembly. The movable part is configured to be connected to an optical element. The movable part is movable relative to the fixed assembly. The driving assembly is configured to drive the movable part to move relative to the fixed assembly. The movable part includes a connecting assembly configured to position the optical element.