Abstract: A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.

Abstract: An input device assembly with a support pad is provided. The input device assembly includes the support pad and an input device. The support pad includes a first main body and a first magnetic attraction element. The first main body has a first bottom surface and a first curvy surface. The input device includes a second main body and at least one second magnetic attraction element. The second main body has a second bottom surface and a second curvy surface. The first curvy surface of the support pad is contactable with one of plural portions of the second curvy surface of the input device. The first magnetic attraction element and one of the at least one second magnetic attraction element are magnetically attracted by each other. Consequently, the support pad is in close contact with the input device.

Abstract: A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.

Abstract: A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.

Abstract: A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.

Abstract: The treatment system provides a feature that may reduce cost of the electrochemical plating process by reusing the virgin makeup solution in the spent electrochemical plating bath. The treatment system provides a rotating filter shaft which receives the spent electrochemical plating bath and captures the additives and by-products created by the additives during the electrochemical plating process. To capture the additives and the by-products, the rotating filter shaft includes one or more types of membranes. Materials such as semi-permeable membrane are used to capture the used additives and by-products in the spent electrochemical plating bath. The treatment system may be equipped with an electrochemical sensor to monitor a level of additives in the filtered electrochemical plating bath.

Abstract: A resistive memory cell includes a lower electrode, a resistive transition metal oxide layer, and an upper electrode. The lower electrode includes at least one lower metallic barrier layer, a lower metal layer including a first metal having a melting point higher than 2,000 degrees Celsius, and a transition metal compound layer including an oxide or nitride of a transition metal selected from Ti, Ta, and W. The resistive transition metal oxide layer includes a conductive-filament-forming dielectric oxide of at least one transition metal and located on the transition metal compound layer. The upper electrode includes an upper metal layer including a second metal having a melting point higher than 2,000 degrees Celsius and at least one upper metallic barrier layer.

Abstract: A thin film deposition system includes: a first precursor supply system configured to generate and supply a first precursor vapor from a first precursor source, the first precursor supply system comprising a first precursor source container, wherein at least a portion of an interior surface of the first precursor source container has a three-dimensional (3D) pattern, wherein the 3D pattern comprises a plurality of area enlarging elements configured to enlarge a total contact area of the interior surface of the first precursor source container with the first precursor source stored therein; and a deposition chamber in gas communication with the first precursor source container, the deposition chamber configured to receive the first precursor vapor and deposit a layer of a first precursor source onto a substrate placed in the deposition chamber.

Abstract: A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.

Abstract: A sputtering target structure includes a back plate characterized by a first size and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is no greater than a threshold target size. A given sub-target characterized by a size no greater than the threshold target size exhibits no crack formation in a sputtering operation. Each of the plurality of sub-targets is in direct contact with one or more adjacent sub targets.

Abstract: The treatment system provides a feature that may reduce cost of the electrochemical plating process by reusing the virgin makeup solution in the spent electrochemical plating bath. The treatment system provides a rotating filter shaft which receives the spent electrochemical plating bath and captures the additives and by-products created by the additives during the electrochemical plating process. To capture the additives and the by-products, the rotating filter shaft includes one or more types of membranes. Materials such as semi-permeable membrane are used to capture the used additives and by-products in the spent electrochemical plating bath. The treatment system may be equipped with an electrochemical sensor to monitor a level of additives in the filtered electrochemical plating bath.

Abstract: A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.

Abstract: The present disclosure is directed to a fluid head that is configured to eject a first fluid (e.g., a liquid state fluid) and a second fluid (e.g., a gaseous state fluid). The fluid head is movable in a rotatable-fashion and a translatable-fashion such that the fluid head may be utilized to increase a speed and decrease a period of time for cleaning and drying a workpiece after an electro-chemical polishing (ECP) process or step. The fluid head may also be utilized to increase a speed and decrease a period of time for beveling an edge of a conductive layer on the workpiece. The present disclosure is also directed to methods for cleaning and drying the workpiece as well as beveling the conductive layer of the workpiece utilizing the fluid head.

Abstract: A device includes a movable blade having a first surface to receive a semiconductor wafer. The device can include a positional sensor to detect a position of the semiconductor wafer on a surface of the movable blade, relative to a stationary body. The movable blade can be configured to move relative to the stationary body to cause a displacement of the semiconductor wafer relative to the movable blade. The positional sensor can be coupled to the movable blade.

Abstract: A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.

Abstract: A crystal growth doping apparatus and a crystal growth doping method are provided. The crystal growth doping apparatus includes a crystal growth furnace and a doping device that includes a feeding tube inserted to the furnace body along an oblique insertion direction, and a storage cover and a gate tube that are disposed in the feeding tube. The feeding tube extends from an outer surface thereof to form a placement opening, and the placement opening is recessed from an edge thereof to form an upper recessed portion and a lower recessed portion along the oblique insertion direction. The storage cover includes a storage tank and a handle. When the storage cover is disposed in the gate tube body, the gate tube body is configured to isolate an inner space of the feeding tube from the placement opening.

Abstract: A system and a method for detecting abnormality of a thin-film deposition process are provided. In the method, a thin-film is deposited on a substrate in a thin-film deposition chamber by using a target, a dimension of a collimator mounted between the target and the substrate is scanned by using at least one sensor disposed in the thin-film deposition chamber to derive an erosion profile of the target, and abnormality of the thin-film deposition process is detected by analyzing the erosion profile with an analysis model trained with data of a plurality of erosion profiles derived under a plurality of deposition conditions.

Abstract: In one example in accordance with the present disclosure, a computing device is described. The computing device includes a housing and a light source to illuminate through a window in the housing. The computing device also includes a controller. The controller determines a usage level of a processor of the computing device. The controller also adjusts a characteristic of the light source based on a determined usage level of the processor.

Abstract: A precursor supply system for thin film deposition is provided. The precursor supply system includes a precursor source container, and the precursor source container includes: a top wall; a bottom wall; a side wall circumferentially connecting the top wall and the bottom wall, wherein at least a portion of an interior surface of the precursor source container has a three-dimensional (3D) pattern; an inlet configured to allow introduction of a carrier gas into the precursor source container; and an outlet configured to allow exit of a precursor vapor generated in the precursor source container.