Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

Abstract: A method for scanning artificial structure, wherein a scanning artificial structure apparatus comprises four magnetic-field sensors, the four magnetic-field sensors are non-coplanar configured, the method comprises following steps of: moving the scanning artificial structure apparatus along a scanning path within a to-be-tested area, in the meantime, measuring magnetic field by the four magnetic-field sensors, and recording a position sequence when measuring magnetic field, wherein four magnetic-field measurement sequences are measured by the four magnetic-field sensors; and calculating a magnetic-field variation distribution from the four magnetic-field measurement sequences and the position sequence, wherein the magnetic-field variation distribution is corresponding to at least one artificial structure distribution.

Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices including a carrier and a plurality of transfer units is provided. The transfer units are disposed on the carrier. Each of the transfer units includes a plurality of transfer parts. Each of the transfer parts has a transfer surface. Each of the micro devices has a device surface. The transfer surfaces of the transfer parts of each of the transfer units are connected to the device surface of corresponding micro device. The area of each of the transfer surfaces is smaller than the area of the device surface of the corresponding micro device. A micro device structure using the carrier structure is also provided.

Abstract: A package structure includes a semiconductor die and a first redistribution circuit structure. The first redistribution circuit structure is disposed on and electrically connected to the semiconductor die, and includes a first build-up layer. The first build-up layer includes a first metallization layer and a first dielectric layer laterally wrapping the first metallization layer, wherein at least a portion of the first metallization layer is protruded out of the first dielectric layer.

Abstract: A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a patterned conductive layer, a dielectric layer, and an inter-layer film. The dielectric layer is disposed on the patterned conductive layer. The inter-layer film is sandwiched between the dielectric layer and the patterned conductive layer, and the patterned conductive layer is separated from the dielectric layer through the inter-layer film.

Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.

Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.

Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.

Abstract: A method includes forming a dielectric layer over a first surface of a semiconductor layer, the dielectric layer including a metallization layer. The method includes forming an opening to expose a portion of the dielectric layer. The method includes forming a buffer oxide layer lining the opening. The method includes forming, according to a patternable layer, a recess in the buffer oxide layer partially extending from a second surface of the buffer oxide layer. The method includes removing the patternable layer. The method includes extending the recess through the buffer oxide layer and a portion of the dielectric layer to expose a portion of the metallization layer. The method includes filling the recess with a conductive material to form a pad structure configured to provide electrical connection to the metallization layer.

Abstract: An insulator applied in a probe base including a probe mounting hole, the insulator is a sheet structure having plural through holes, and the probe mounting hole is formed at the center of the insulator, and the probe mounting hole and the through hole penetrate from a first surface to a second surface of the insulator, and the regions of the first and second surfaces without the probe mounting hole and the through hole are coplanar. The probe base has a base body and at least a composite assembly, and the base body has at least a testing zone, and the composite assembly is installed in the testing zone and has at least a probe hole for installing a probe, and the insulator is installed into the probe hole.

Abstract: In one example in accordance with the present disclosure, a computing device is described. The computing device includes a housing and a light source to illuminate through a window in the housing. The computing device also includes a controller. The controller determines a usage level of a processor of the computing device. The controller also adjusts a characteristic of the light source based on a determined usage level of the processor.

Abstract: A transistor device with a recessed gate structure is provided. In some embodiments, the transistor device comprises a semiconductor substrate comprising a device region surrounded by an isolation structure and a pair of source/drain regions disposed in the device region and laterally spaced apart one from another in a first direction. A gate structure overlies the device region and the isolation structure and arranged between the pair of source/drain regions. The gate structure comprises a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A channel region is disposed in the device region underneath the gate structure. The channel region has a channel width extending in the second direction from one of the recess regions to the other one of the recess regions.

Abstract: A thin film deposition system deposits a thin film on a substrate in a thin film deposition chamber. The thin film deposition system deposits the thin film by flowing a fluid into the thin film deposition chamber. The thin film deposition system includes a byproducts sensor that senses byproducts of the fluid in an exhaust fluid. The thin film deposition system adjusts the flow rate of the fluid based on the byproducts.

Abstract: A support base includes a casing, a signal transmission module, a connection port, an audio output element and a detecting module. The support base is connected with a portable electronic device through the signal transmission module. The support base is connected with an external electronic device through the connection port. A first audio signal from the portable electronic device or a second audio signal from the external electronic device can be played by the audio output element. The detecting module detects the connection status of the support base. According to the connection status, the first audio signal or the second audio signal is controlled to be outputted from the audio output element.

Abstract: The present disclosure provides a flexible workpiece pedestal capable of tilting a workpiece support surface. The workpiece pedestal further includes a heater mounted on the workpiece support surface. The heater includes a plurality of heating sources such as heating coils. The plurality of heating sources in the heater allows heating the workpiece at different temperatures for different zones of the workpiece. For example, the workpiece can have a central zone heated by a first heating coil, a first outer ring zone that is outside of the central zone heated by a second heating coil, a second outer ring zone that is outside of the first outer ring zone heated by a third heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

Abstract: Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.

Abstract: The present invention relates to an equipment for enabling and accelerating uniform reaction between a to-be-reacted substance contained in a porous substrate and a reactant, and the equipment comprises: a machine body having a draining bottom plate on which the porous substrate can be placed; and a coating head which is provided above the machine body, can be moved horizontally along the porous substrate while maintaining a predetermined height, and has one or more slits, wherein each slit has an injection opening at one end and a liquid output opening at the other end.

Abstract: A method for fabricating a pellicle assembly for a lithography process includes providing a carrier. A membrane layer is fabricated over the carrier. A pellicle frame is attached to the membrane layer. The carrier is then separated from the membrane layer using a release treatment process.

Abstract: Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.

Abstract: A method of manufacturing a mask includes depositing an end-point layer over a light transmitting substrate, depositing a phase shifter over the end-point layer, depositing a hard mask layer over the phase shifter, and removing a portion of the hard mask layer and a first portion of the phase shifter to expose a portion of the end-point layer. The end-point layer and the light transmitting substrate are transparent to a predetermined wavelength.