Patents by Inventor An-Chul Shin

An-Chul Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating metal interconnection and method of fabricating image sensor using the same
    Patent number: 8338295
    Abstract: A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: December 25, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-Ho Lee, Young-Hoon Park, Sang-Il Jung, Jun-Seok Yang, An-Chul Shin, Min-Young Jung
  • METHOD OF FABRICATING METAL INTERCONNECTION AND METHOD OF FABRICATING IMAGE SENSOR USING THE SAME
    Publication number: 20110294288
    Abstract: A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
    Type: Application
    Filed: August 10, 2011
    Publication date: December 1, 2011
    Inventors: Jeong-Ho LEE, Young-Hoon Park, Sang-Il Jung, Jun-Seok Yang, An-Chul Shin, Min-Young Jung
  • Method of fabricating metal interconnection and method of fabricating image sensor using the same
    Patent number: 8026171
    Abstract: A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
    Type: Grant
    Filed: November 19, 2008
    Date of Patent: September 27, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-Ho Lee, Young-Hoon Park, Sang-Il Jung, Jun-Seok Yang, An-Chul Shin, Min-Young Jung
  • Method of fabricating image sensor
    Patent number: 8003429
    Abstract: A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: August 23, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-Ho Lee, Sang-Il Jung, Young-Hoon Park, Jun-Seok Yang, An-Chul Shin, Min-Young Jung
  • METHOD OF FABRICATING METAL INTERCONNECTION AND METHOD OF FABRICATING IMAGE SENSOR USING THE SAME
    Publication number: 20090137111
    Abstract: A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
    Type: Application
    Filed: November 19, 2008
    Publication date: May 28, 2009
    Inventors: JEONG-HO LEE, Yonng-Hoon Park, Sang-II Jung, Jun-Seok Yang, An-Chul Shin, Min-Young Jung
  • Method of fabricating image sensor
    Publication number: 20090130792
    Abstract: A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.
    Type: Application
    Filed: November 17, 2008
    Publication date: May 21, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jeong-Ho Lee, Sang-ll Jung, Young-Hoon Park, Jun-Seok Yang, An-Chul Shin, Min-Young Jung