Patents by Inventor An-Cih Tang

An-Cih Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10816716
    Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: October 27, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
  • Patent number: 10689569
    Abstract: An overcoating inorganic quantum dot and a method for preparing the same are provided. The overcoating inorganic quantum dot includes at least one perovskite quantum dot with an oxide overcoat. The method includes forming the perovskite quantum dots, and overcoating an oxide overcoat on the perovskite quantum dots.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: June 23, 2020
    Assignee: Taiwan Hopax Chemicals Mfg. Co., Ltd.
    Inventors: Hung-Chia Wang, An-Cih Tang, Hsin-Yu Tsai, Ru-Shi Liu, Ping-Hung Lin, Wen-Wei Chien, Li-Jane Her
  • Publication number: 20190383990
    Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.
    Type: Application
    Filed: August 23, 2019
    Publication date: December 19, 2019
    Inventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
  • Patent number: 10436973
    Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: October 8, 2019
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
  • Publication number: 20180037815
    Abstract: An overcoating inorganic quantum dot and a method for preparing the same are provided. The overcoating inorganic quantum dot includes at least one perovskite quantum dot with an oxide overcoat. The method includes forming the perovskite quantum dots, and overcoating an oxide overcoat on the perovskite quantum dots.
    Type: Application
    Filed: July 21, 2017
    Publication date: February 8, 2018
    Applicant: Taiwan Hopax Chemicals Mfg. Co., Ltd.
    Inventors: Hung-Chia Wang, An-Cih Tang, Hsin-Yu Tsai, Ru-Shi Liu, Ping-Hung Lin, Wen-Wei Chien, Li-Jane Her
  • Publication number: 20170155020
    Abstract: A wavelength-converting material and an application thereof are provided. The wavelength-converting material includes an all-inorganic perovskite quantum dot having a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.
    Type: Application
    Filed: November 22, 2016
    Publication date: June 1, 2017
    Inventors: Shin-Ying Lin, Hung-Chia Wang, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
  • Publication number: 20170153382
    Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.
    Type: Application
    Filed: November 28, 2016
    Publication date: June 1, 2017
    Inventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong