Patents by Inventor An-Di SHEU

An-Di SHEU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stretchable Display
    Publication number: 20240381724
    Abstract: A display may have a stretchable portion with hermetically sealed rigid pixel islands. A flexible interconnect region may be interposed between the hermetically sealed rigid pixel islands. The hermetically sealed rigid pixel islands may include organic light-emitting diode (OLED) pixels. A conductive cutting structure may have an undercut that causes a discontinuity in a conductive OLED layer to mitigate lateral leakage. The conductive cutting structure may also be electrically connected to a cathode for the OLED pixels and provide a cathode voltage to the cathode. First and second inorganic passivation layers may be formed over the OLED pixels. Multiple discrete portions of an organic inkjet printed layer may be interposed between the first and second inorganic passivation layers.
    Type: Application
    Filed: July 25, 2024
    Publication date: November 14, 2024
    Inventors: Prashant Mandlik, Bhadrinarayana Lalgudi Visweswaran, Xuesong Lu, Weixin Li, Wenbing Hu, Yuchi Che, Tsung-Ting Tsai, Gihoon Choo, Shyuan Yang, Kuan-Yi Lee, An-Di Sheu, Chi-Wei Chou, Chin-Fu Lee, An-Hong Shen, Ko-Wei Chen, Kyounghwan Kim, Jae Won Choi, Warren S. Rieutort-Louis, Sungki Lee
  • Stretchable Display
    Publication number: 20240210995
    Abstract: A display may have a stretchable portion with hermetically sealed rigid pixel islands. A flexible interconnect region may be interposed between the hermetically sealed rigid pixel islands. The hermetically sealed rigid pixel islands may include organic light-emitting diode (OLED) pixels. A conductive cutting structure may have an undercut that causes a discontinuity in a conductive OLED layer to mitigate lateral leakage. The conductive cutting structure may also be electrically connected to a cathode for the OLED pixels and provide a cathode voltage to the cathode. First and second inorganic passivation layers may be formed over the OLED pixels. Multiple discrete portions of an organic inkjet printed layer may be interposed between the first and second inorganic passivation layers.
    Type: Application
    Filed: October 10, 2023
    Publication date: June 27, 2024
    Inventors: Prashant Mandlik, Bhadrinarayana Lalgudi Visweswaran, Mahendra Chhabra, Chia-Hao Chang, Shiyi Liu, Siddharth Harikrishna Mohan, Zhen Zhang, Han-Chieh Chang, Yi Qiao, Yue Cui, Tyler R Kakuda, Michael Vosgueritchian, Sudirukkuge T. Jinasundera, Warren S Rieutort-Louis, Tsung-Ting Tsai, Jae Won Choi, Jiun-Jye Chang, Jean-Pierre S Guillou, Rui Liu, Po-Chun Yeh, Chieh Hung Yang, Ankit Mahajan, Takahide Ishii, Pei-Ling Lin, Pei Yin, Gwanwoo Park, Markus Einzinger, Martijn Kuik, Abhijeet S Bagal, Kyounghwan Kim, Jonathan H Beck, Chiang-Jen Hsiao, Chih-Hao Kung, Chih-Lei Chen, Chih-Yu Chung, Chuan-Jung Lin, Jung Yen Huang, Kuan-Chi Chen, Shinya Ono, Wei Jung Hsieh, Wei-Chieh Lin, Yi-Pu Chen, Yuan Ming Chiang, An-Di Sheu, Chi-Wei Chou, Chin-Fu Lee, Ko-Wei Chen, Kuan-Yi Lee, Weixin Li, Shin-Hung Yeh, Shyuan Yang, Themistoklis Afentakis, Asli Sirman, Baolin Tian, Han Liu
  • Semiconductor device and method of forming the same
    Patent number: 10957585
    Abstract: A method is provided. Plural semiconductor fins are formed on a substrate, and plural trenches each of which is formed between two adjacent semiconductor fins. A silicon liner layer is deposited to be conformal to the semiconductor fins and the trenches. The silicon liner layer is deposited by using a silane compound. Then, an oxide layer is deposited on the silicon liner layer to fill the trenches and cover the semiconductor fins, in which depositing the oxide layer forms water in the oxide layer. Next, a surface of the silicon liner layer is reacted with the water, so as to remove the water from the oxide layer.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: March 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: I-Wen Hsu, Yu-Yun Peng, An-Di Sheu, Jei-Ming Chen
  • SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20200135551
    Abstract: A method is provided. Plural semiconductor fins are formed on a substrate, and plural trenches each of which is formed between two adjacent semiconductor fins. A silicon liner layer is deposited to be conformal to the semiconductor fins and the trenches. The silicon liner layer is deposited by using a silane compound. Then, an oxide layer is deposited on the silicon liner layer to fill the trenches and cover the semiconductor fins, in which depositing the oxide layer forms water in the oxide layer. Next, a surface of the silicon liner layer is reacted with the water, so as to remove the water from the oxide layer.
    Type: Application
    Filed: October 24, 2018
    Publication date: April 30, 2020
    Inventors: I-Wen HSU, Yu-Yun PENG, An-Di SHEU, Jei-Ming CHEN