Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.

Abstract: Current sharing in a power system having multiple PSUs comprises generating and supplying a first power and a second power to a load, and sensing a remote voltage value received by the load based on an accumulation of the first and second powers. The method further comprises determining, by the first PSU, local voltage and current values of the first power, a real impedance value of the first PSU based on the remote voltage value and the local voltage and current values of the first power, and a virtual impedance value of the first PSU based on the real impedance value of the first PSU and a reference impedance value. The method further comprises controlling generation of the first power by the first PSU based on the virtual impedance value of the first PSU.

Abstract: A calibration method for emulating a Group III-V semiconductor device, a method for determining trap location within a Group III-V semiconductor device and method for manufacturing a Group III-V semiconductor device are provided. Actual tape-out is performed according to an actual process flow of the Group III-V semiconductor device for manufacturing the Group III-V semiconductor devices and PCM Group III-V semiconductor device. Actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are obtained and the actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are compared to determine locations where one or more traps appear.

Abstract: A micro-fluidic detection device includes a first base plate, a second base plate opposite to the first base plate, and a droplet travel layer located between the first and second base plates. The first base plate includes a first substrate, a drive array layer, a first electrode layer, and a first hydrophobic layer. The second base plate includes a second substrate, a second electrode layer, and a second hydrophobic layer. Drive electrodes of the first electrode layer are at first units. The first unit includes a micro-fluidic unit circuit. A second unit includes a detection unit circuit. The detection unit circuit includes inorganic transistors and organic transistors. A sensitive electrode is at the second unit. The sensitive electrode is on a side of a layer where the inorganic transistor is located away from the first substrate. A first hollow hole of the first base plate exposes the sensitive electrode.

Abstract: The present application provides a processing method of a metal composite structure including a first metal layer and a second metal layer stacked on the first metal layer. The processing method includes the steps of defining a first through hole in the first metal layer, and drilling in the first through hole toward the second metal layer to form a traction hole in the second metal layer. Then, hot melt drilling is performed on a surface of the second metal layer away from the first metal layer toward the first through hole, thereby causing the second metal layer to crack under a traction force of the traction hole to form a second through hole, and a portion of the second metal layer to be melted and squeezed to form a bushing which adheres to at least a portion of a sidewall of the first through hole.

Abstract: A single molecule detection method based on grating scanning recognition, in which a large number of capture beads are scattered on a bead retaining plate (or a detection chip). At least part of the capture beads are specifically bound with an analyte, and each analyte is bound with a luminescent substance. Grating ports of a grating detection device are used to scan the capture beads column by column from the capture beads arranged at one end. The number of the capture beads bound with a marker is synchronously counted. The capture beads on the whole bead retaining plate are scanned through transverse relative movement between the grating ports and the capture beads. The total number of analytes can be obtained after scanning is completed.

Abstract: An electronic device including a die and a connection structure electrically connected to the die is disclosed. The connection structure includes a first insulating layer including an opening, a second insulating layer, a first metal element disposed between the first insulating layer and the second insulating layer, a second metal element disposed in the opening and electrically connected to the first metal element, and a conductive element. The second metal element is electrically connected between the conductive element and the first metal element. A first surface and a second surface of the first insulating layer are contacted with the first metal element and the conductive element respectively. The first insulating layer includes first filling elements, the second insulating layer includes second filling elements, and in a cross-sectional view, a second maximum size of the second filling elements is greater than a first maximum size of the first filling elements.

Abstract: The present disclosure relates to a method and system for quantitative damage monitoring of a reinforced concrete structure and belongs to the technical field of civil engineering.

Abstract: A thermal power budget optimization method includes acquiring sensor log information from a plurality of sensors of a heating device, generating a virtual surface temperature of the heating device according to the sensor log information, setting a target surface temperature of the heating device, and dynamically adjusting a thermal power budget of the heating device according to the virtual surface temperature and the target surface temperature over time.

Abstract: The present disclosure relates to a technical field of iron and steel material, in particular to an oriented electrical steel with high magnetic induction and annealing method thereof. Impeccable secondary recrystallization and single Goss texture are formed by controlling the heating rate and the atmosphere of the annealing treatment, confirming beginning and ending temperature in accordance with different heating rate. The orientation density of the Goss texture is more than 145. The magnetic induction intensity B8 is increased by 1-3% compared with products of same grade.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

Abstract: A power device includes: a semiconductor layer, a well region, a body region, a gate, a source, a drain, a first salicide block (SAB) layer and a second SAB layer. The first SAB layer is formed on a top surface of the semiconductor layer, and is located between the gate and the drain, wherein a part of the well is located vertically below and in contact with the first SAB layer. The second SAB layer is formed vertically above and in contact with the first SAB layer.

Abstract: An indoor air cleaning system includes plural gas detectors disposed in outdoor field and indoor field for detecting air pollution information and outputting thereof via IOT communication; at least one cleaning device including a fan, a filter element and a sterilization component, wherein the fan guides an air pollution to pass through the filter element and the sterilization component, the fan has a specific CADR for generating a directional circular airflow, and the filter element includes a HEPA filter screen; and a cloud computing server receiving the indoor and outdoor air pollution information via IOT communication, storing the air pollution information to an air pollution big data database, and performing intelligent computing to output a control command to the cleaning device to generate the directional circular airflow for rapidly guiding the air pollution to pass through the filter element and the sterilization component, thereby reaching a gas state of the indoor field cleanroom classes.

Abstract: A minimum IC operating voltage searching method includes acquiring a corner type of an IC, acquiring ring oscillator data of the IC, generating a first prediction voltage according to the corner type and the ring oscillator data by using a training model, generating a second prediction voltage according to the ring oscillator data by using a non-linear regression approach under an N-ordered polynomial, and generating a predicted minimum IC operating voltage according to the first prediction voltage and the second prediction voltage. N is a positive integer.

Abstract: The present invention discloses a method for designing an interference noise of speech based on the human speech structure, including the following steps: (1): obtaining a large amount of speech data containing different speakers and different speech contents, extracting voiceprint information, and then building an initial speech data set; (2): for each user, obtaining a small amount of speech data of the user, extracting voiceprint information, and then matching the most similar speech data in the initial speech data set; (3): performing data augmentation on the matched speech data; (4): segmenting the augmented speech data with a phoneme segmentation algorithm to form a vowel data set and a consonant data set; (5): constructing three noise sequences based on the vowel data set and the consonant data set, and performing superimposition to obtain an interference noise; and (6): continuously generating and playing randomly generated interference noise, and continuously injecting the interference noise into rec

Abstract: A dual-port optical transmitting and receiving assembly, comprising an optical transmitting group, an optical circulator, a light turning element, a first input/output terminal, a second input/output terminal, and an optical receiving group. The first input/output terminal and the second input/output terminal are disposed in a spaced arrangement. A first signal light emitted from the optical transmitting group passes through the optical circulator and enters the first input/output terminal. A second signal light emitted from the optical transmitting group passes through the optical circulator. Then, it enters the second input/output terminal after being reflected by the light turning element. A third signal light from the first input/output terminal passes through the optical circulator and enters the optical receiving group. A fourth signal light from the second input/output terminal is reflected by the light turning element and enters the optical receiving group after passing through the optical circulator.

Abstract: An electronic device including a panel and an actuator is disclosed. The panel includes a first substrate, a second substrate and a plurality of light-emitting elements. The second substrate is disposed on the first substrate, and the second substrate includes a plurality of main portions and a plurality of openings. The plurality of light-emitting elements are disposed on the plurality of main portions of the second substrate. The first substrate is disposed between the actuator and the second substrate. In a deformation mode, the panel is deformed by the actuator.

Abstract: The application provides drugs, expression vectors, and their applications in the treatment of NAFLD and related diseases, pertaining to the technical field of targeted drugs. The drugs include streptavidin or a recombinant expression vector for streptavidin. Streptavidin can bind to acetyl CoA carboxylase 1, alter its subcellular localization within mammalian cells, and ultimately inhibit de novo lipogenesis. Ectopic expression of streptavidin can inhibit lipid accumulation within mammalian cells. Compared with chemical small-molecule drugs, streptavidin, as a protein drug, exhibits relatively lower liver and kidney toxicity. Streptavidin might be a relatively mild inhibitor of acetyl CoA carboxylase, avoiding a severe side effect of hyperlipidemia. Furthermore, streptavidin is very stable, which might be conducive to drug delivery and adaptable to different administration methods.

Abstract: A vehicle-mounted radar system, a blind spot detection method and a vehicle are disclosed. The vehicle-mounted radar system includes an antenna array, a phase shifter array and a radar chip. The phase shifter array includes transmitting phase shifters and receiving phase shifters, the transmitting phase shifters are connected with corresponding transmitting antennas, the receiving phase shifters are connected with corresponding receiving antennas, the transmitting phase shifters are configured to adjust a beam direction of electromagnetic waves according to a driving condition of a vehicle so that the electromagnetic waves are transmitted to an actual blind spot, and the receiving phase shifters are configured to adjust a beam direction of echo signals so that the beam direction of the echo signals is same as the beam direction of the electromagnetic waves; the radar chip is connected with the transmitting phase shifters and the receiving phase shifters respectively.

Abstract: An electronic device includes a substrate, a first transistor, a second transistor, an electronic unit and a conductor. The first transistor is disposed on the substrate and comprises an oxide semiconductor layer. The second transistor is disposed on the substrate and comprises a silicon semiconductor layer. The electronic unit is disposed on the substrate and electrically connected to the second transistor. The conductor is electrically connected to the oxide semiconductor layer and the silicon semiconductor layer.