Abstract: A method includes forming a first portion of a spacer layer over a first fin and a second portion of the spacer layer over a second fin, performing a first etching process to recess the first portion of the spacer layer with respect to the second portion of the spacer layer to form first spacers on sidewalls of the first fin, subsequently performing a second etching process to recess the second portion of the spacer layer with respect to the first spacers to form second spacers on sidewalls of the second fin, where the second spacers are formed to a height greater than that of the first spacers, and forming a first epitaxial source/drain feature and a second epitaxial source/drain feature between the first spacers and the second spacers, respectively, where the first epitaxial source/drain feature is larger than that of the second epitaxial source/drain feature.

Abstract: A semiconductor device includes a semiconductor layer and a gate structure on the semiconductor layer. The gate structure includes a multi-stepped gate dielectric on the semiconductor layer and a gate electrode on the multi-stepped gate dielectric. The multi-stepped gate dielectric includes a first gate dielectric segment having a first thickness and a second gate dielectric segment having a second thickness that is less than the first thickness.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A driving method for a multiple frequency coupling generator is provided. The method includes: in normal operations, interpreting an input digital control signal transmitted from a digital signal processor into an interpreted digital control signal; interpreting the interpreted digital control signal into a plurality of magnetic coupling signals by a magnetic coupling switch circuit; performing signal recovery and differential delay on the magnetic coupling signals by an interlocking circuit for reducing time difference and signal loss of the magnetic coupling signals; and when the interlocking circuit determines that the magnetic coupling signals have substantially no time difference and no signal loss, transforming the magnetic coupling signals into a first driving signal and a second driving signal by a switch circuit, a driver circuit and an output pad group to drive a backend driving loop.

Abstract: Embodiments are directed to a method of operating a plasma processing system by retrofitting one or more components thereof. The method includes removing a holder from a gas supply mechanism of the plasma processing system. The holder includes a gas injector that is configured to provide gas received from a gas source to a plasma chamber of the plasma processing system. The method further includes reducing a size of a guide pin of the holder, installing the holder including the guide pin having the reduced size in the gas supply mechanism, and rotating the gas injector to change a flow of gas through the gas injector.

Abstract: In a method, a first dielectric layer is formed over semiconductor fins, a second dielectric layer is formed over the first dielectric layer, the second dielectric layer is recessed below a top of each of the semiconductor fins, a third dielectric layer is formed over the recessed second dielectric layer, and the third dielectric layer is recessed below the top of the semiconductor fin, thereby forming a wall fin. The wall fin includes the recessed third dielectric layer and the recessed second dielectric layer disposed over the recessed third dielectric layer. The first dielectric layer is recessed below a top of the wall fin, a fin liner layer is formed, the fin liner layer is recessed and the semiconductor fins are recessed, and source/drain epitaxial layers are formed over the recessed semiconductor fins, respectively. The source/drain epitaxial layers are separated by the wall fin from each other.

Abstract: In a method, a first dielectric layer is formed over semiconductor fins, a second dielectric layer is formed over the first dielectric layer, the second dielectric layer is recessed below a top of each of the semiconductor fins, a third dielectric layer is formed over the recessed second dielectric layer, and the third dielectric layer is recessed below the top of the semiconductor fin, thereby forming a wall fin. The wall fin includes the recessed third dielectric layer and the recessed second dielectric layer disposed over the recessed third dielectric layer. The first dielectric layer is recessed below a top of the wall fin, a fin liner layer is formed, the fin liner layer is recessed and the semiconductor fins are recessed, and source/drain epitaxial layers are formed over the recessed semiconductor fins, respectively. The source/drain epitaxial layers are separated by the wall fin from each other.

Abstract: A pneumatic machine tool comprises a handle with one end being a first pivot connecting end, and a tool head. The handle comprises a main flow channel extending to the first pivot connecting end, and a switch assembly provided in the main flow channel. The tool head comprises a main body, a tool driving assembly disposed in the main body, and two pivot connecting arms formed on the main body and disposed side by side. The two pivot connecting arms are served as a second pivot connecting. The main body is formed with a chamber provided for disposing the tool driving assembly, and at least one secondary flow channel communicating with the chamber and extending to the two pivot connecting arms. The pivot shaft comprises a transfer flow channel and two transfer ports communicating with the channel.

Abstract: Disclosed are gaming systems, methods and machines for a gaming cabinet configuration. In particular, the gaming systems, methods and machines may incorporate gaming cabinets that include one or more curved or arcuate screens, one or more candles integrated into the gaming cabinet, and/or one or more diffuse lighting elements to provide lighting features or effects.

Abstract: A dummy gate structure may be formed for a semiconductor device. The dummy gate structure may be formed from an amorphous polysilicon layer. The amorphous polysilicon layer may be deposited in a blanket deposition operation. An annealing operation is performed for the semiconductor device to remove voids, seams, and/or other defects from the amorphous polysilicon layer. The annealing operation may cause the amorphous polysilicon layer to crystallize, thereby resulting in the amorphous polysilicon layer transitioning into a crystallized polysilicon layer. A dual radio frequency (RF) source etch technique may be performed to increase the directionality of ions and radicals in a plasma that is used to etch the crystallized polysilicon layer to form the dummy gate structure. The increased directionality of the ions increases the effectiveness of the ions in etching through the different crystal grain boundaries which increases the etch rate uniformity across the crystallized polysilicon layer.

Abstract: The present disclosure relates to a heat exchange system, which includes a cabinet and a heat exchange apparatus. The cabinet includes a heat dissipation door and a cabinet body, and the heat dissipation door is disposed on the cabinet body. The heat exchange apparatus is disposed in the cabinet body. The heat exchange apparatus includes a heat exchange module. The heat exchange module includes a first circulation pipe and a cooling device. The first circulation pipe is in fluid communication with a heat dissipation tube component in the heat dissipation door. The cooling device includes a second circulation pipe and a plurality of dissipation fins. The second circulation pipe is heat-exchanged with the plurality of dissipation fins. The first circulation pipe is heat-exchanged with but not in fluid communication with the second circulation pipe.

Abstract: A motor and a rotor structure thereof are disclosed. The rotor structure includes a rotor core. The rotor core has a plurality of magnetic member units arranged around a periphery of the rotor core. Each magnetic member unit includes two first magnetic members and a second magnetic member. The two first magnetic members are obliquely arranged in a V shape relative to a center of the rotor core. The second magnetic member extends transversely between the two first magnetic members. Each first magnetic member has at least two permanent magnets that are arranged obliquely. The motor further includes a stator core covering the rotor core. The stator core has a plurality of stator windings arranged annularly. The stator windings correspond to the magnetic member units. The rotor structure has high structural strength, and the phenomenon of stress concentration is less obvious when the motor is running.

Abstract: A cabinet and a heat dissipation door thereof are provided. The heat dissipation door is disposed on a cabinet body and includes a first plate, a plurality of heat dissipation sheets, and a heat dissipation tube component. A plurality of heat dissipation sheets is disposed on the first plate. The heat dissipation tube component is disposed on the first plate and includes a water inlet, a water outlet, and a plurality of heat dissipation tubes. Two ends of each of the plurality of heat dissipation tubes respectively are in fluid communication with the water inlet and the water outlet, and the plurality of heat dissipation tubes has a plurality of extending sections and at least one connecting section. The plurality of extending sections passes through the plurality of heat dissipation surfaces in sequence. At least one connecting section is connected to ends of two adjacent extending sections.

Abstract: The present disclosure relates to a heat exchange system, which includes at least one cabinet and a heat exchange apparatus. Each of the at least one cabinet includes a heat dissipation door and a cabinet body, and the heat dissipation door is disposed on the cabinet body. The heat exchange apparatus includes a heat exchange module. The heat exchange module includes a first circulation pipe and a cooling device. The first circulation pipe is in fluid communication with a heat dissipation tube component in the heat dissipation door. The cooling device includes a second circulation pipe and a chilling machine. A part of the second circulation pipe is penetrated in the chilling machine to transfer heat into the chilling machine. The first circulation pipe is heat-exchanged with but not in fluid communication with the second circulation pipe.

Abstract: The present disclosure relates to a heat exchange system, which includes a cabinet and a heat exchange apparatus. The cabinet includes a heat dissipation door and a cabinet body, and the heat dissipation door is disposed on the cabinet body. The heat exchange apparatus is disposed in the cabinet body. The heat exchange apparatus includes a heat exchange module. The heat exchange module includes a first circulation pipe and a cooling device. The first circulation pipe is in fluid communication with a heat dissipation tube component in the heat dissipation door. The cooling device includes a second circulation pipe, a compression heat exchange component, a plurality of heat dissipation fins, and a control component. The second circulation pipe is heat-exchanged with but not in fluid communication with the first circulation pipe.

Abstract: The present disclosure relates to a heat exchange system, which includes a cabinet and a heat exchange apparatus. The cabinet includes a heat dissipation door and a cabinet body, and the heat dissipation door is disposed on the cabinet body. The heat exchange apparatus is partially disposed in the cabinet body. The heat exchange apparatus includes a heat exchange module. The heat exchange module includes a first circulation pipe and a cooling device. The first circulation pipe is in fluid communication with a heat dissipation tube component in the heat dissipation door. The cooling device includes a second circulation pipe and a chilling machine. A part of the second circulation pipe is penetrated in the chilling machine to transfer heat into the chilling machine. The first circulation pipe is heat-exchanged with but not in fluid communication with the second circulation pipe.

Abstract: The present disclosure provides a heat exchange system including a heat exchange module, a drive module, a buffer module, and a control module. The heat exchange module includes a first circulation pipe. A part of the first circulation pipe is penetrated into a cabinet. The driving module is connected to the heat exchange module and configured to drive a first fluid in the first circulation pipe to flow along the pipeline. The buffer module is in fluid communication with the first circulation pipe and includes a first control valve and a first storage space. The first control valve is between the first circulation pipe and the first storage space. The control module is electrically connected to the drive module and the buffer module. The control module includes a sensing device. The control module controls the first control valve and the drive module.

Abstract: A two-step etch technique is used in a continuous polysilicon on oxide definition edge (CPODE) recess process to form a recess in which the CPODE structure is to be formed. The two-step process includes performing a first etch operation using an isotropic etch technique, in which a recess in a dummy gate structure is formed to a first depth. A second etch operation is performed using anisotropic etch technique to form the recess to a second depth. The use of the anisotropic etch technique results in a highly directional (e.g., vertical) etch of the dummy gate structure in the second etch operation. The highly directional etch provided by the anisotropic etch technique at or near the bottom of the dummy gate structure reduces, minimizes, and/or prevents etching into adjacent portions of an interlayer dielectric (ILD) layer and/or into source/drain region(s) under the portions of the ILD layer.