Patents by Inventor An-Hsiu Cheng

An-Hsiu Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10580780
    Abstract: Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on the active regions and connected to ends of the fuse. In an embodiment, a portion of a bottom surface of the fuse is lower than top surfaces of the active regions of the substrate.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: March 3, 2020
    Assignee: United Microelectronics Corp.
    Inventors: Zi-Jun Liu, Ping-Chia Shih, Chi-Cheng Huang, Kuo-Lung Li, Hung-Wei Lin, An-Hsiu Cheng, Chih-Hao Pan, Cheng-Hua Chou, Chih-Hung Wang
  • Publication number: 20190378846
    Abstract: Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on the active regions and connected to ends of the fuse. In an embodiment, a portion of a bottom surface of the fuse is lower than top surfaces of the active regions of the substrate.
    Type: Application
    Filed: June 11, 2018
    Publication date: December 12, 2019
    Applicant: United Microelectronics Corp.
    Inventors: Zi-Jun Liu, Ping-Chia Shih, Chi-Cheng Huang, Kuo-Lung Li, Hung-Wei Lin, An-Hsiu Cheng, Chih-Hao Pan, Cheng-Hua Chou, Chih-Hung Wang
  • Patent number: 10340282
    Abstract: A semiconductor memory device includes a substrate, having a plurality of cell regions, wherein the cell regions are parallel and extending along a first direction. A plurality of STI structures is disposed in the substrate, extending along the first direction to isolate the cell regions, wherein the STI structures have a uniform height lower than the substrate in the cell regions. A selection gate line is extending along a second direction and crossing over the cell regions and the STI structures. A control gate line is adjacent to the selection gate line in parallel extending along the second direction and also crosses over the cell regions and the STI structures. The selection gate line and the control gate line together form a two-transistor (2T) memory cell.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: July 2, 2019
    Assignee: United Microelectronics Corp.
    Inventors: Shu-Hung Yu, Chun-Hung Cheng, Chuan-Fu Wang, An-Hsiu Cheng, Ping-Chia Shih, Chi-Cheng Huang, Kuo-Lung Li, Chia-Hui Huang, Chih-Yao Wang, Zi-Jun Liu, Chih-Hao Pan
  • Publication number: 20180182900
    Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a tunneling well, a tunneling oxide layer, a charge storage layer and a control gate. The tunneling oxide layer is disposed on the tunneling well. The tunneling oxide layer includes a first tunneling oxide segment having a first thickness, a second tunneling oxide segment having a second thickness, and a third tunneling oxide segment having a third thickness, and the first thickness, the second thickness and the third thickness are different from each other. The charge storage layer is disposed on the tunneling oxide layer, and the control gate is disposed on the charge storage layer.
    Type: Application
    Filed: February 21, 2017
    Publication date: June 28, 2018
    Inventors: Ya-Sheng Feng, Chi-Cheng Huang, Ping-Chia Shih, Hung-Wei Lin, Yu-Chun Chen, Ling-Hsiu Chou, An-Hsiu Cheng
  • Patent number: 10008615
    Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a tunneling well, a tunneling oxide layer, a charge storage layer and a control gate. The tunneling oxide layer is disposed on the tunneling well. The tunneling oxide layer includes a first tunneling oxide segment having a first thickness, a second tunneling oxide segment having a second thickness, and a third tunneling oxide segment having a third thickness, and the first thickness, the second thickness and the third thickness are different from each other. The charge storage layer is disposed on the tunneling oxide layer, and the control gate is disposed on the charge storage layer.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: June 26, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ya-Sheng Feng, Chi-Cheng Huang, Ping-Chia Shih, Hung-Wei Lin, Yu-Chun Chen, Ling-Hsiu Chou, An-Hsiu Cheng