Abstract: The present disclosure provides a method and a system for scanning wafer. The system captures a defect image of a wafer, and generates a reference image corresponding to the first defect image based on a reference image generation model. The system generates a defect marked image based on the defect image and the reference image.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a first transistor over a substrate, including a first channel layer over the substrate, a second channel layer over and spaced apart from the first channel layer in a first direction, and a first source/drain structure attached to the first channel layer and the second channel layer. The semiconductor structure further includes a second transistor over the substrate, including a third channel layer over the substrate, a fourth channel layer over and spaced apart from the third channel layer in the first direction, and a second source/drain structure attached to the third channel layer and the fourth channel layer. In addition, a dimension of the first source/drain structure in the first direction is different from a dimension of the second source/drain structure in the first direction.

Abstract: A resin composition includes 100 parts by weight of hydrocarbon resin polymers and 0.01 to 50 parts by weight of divinyl aromatic compound. A substrate structure includes a resin layer and a conductive layer disposed on the resin layer, wherein the resin layer is formed from the resin composition. A manufacturing method of the resin composition includes the following steps: providing a mixture, wherein the mixture includes a monovinyl aromatic compound and a divinyl aromatic compound, and optionally includes a bridged ring compound; polymerizing the mixture to form a crude composition; and purifying the crude composition to prepare the resin composition.

Abstract: An automatic processing device for liquid samples includes a sample region, a control module, an image identification device and a centrifuge. The sample region is configured to accommodate a plurality of centrifuge tubes. The control module includes a mechanical module. The mechanical module is configured to unscrew or tighten upper caps of the centrifuge tubes, and is configured to draw liquid from the centrifuge tubes or discharge liquid to the centrifuge tubes. The image identification device is coupled to the control module. The centrifuge is coupled to the control module. The centrifuge is configured to accommodate the centrifuge tubes and perform centrifugal treatment.

Abstract: A multiple transport carrier docking device may be capable of storing and/or staging a plurality of transport carriers in a chamber of the multiple transport carrier docking device, and may be capable of forming an air-tight seal around a transport carrier in the chamber. Semiconductor wafers in the transport carrier may be accessed by a wafer transport tool while the air-tight seal around the transport carrier prevents and/or reduces the likelihood that contaminants in the semiconductor fabrication facility will reach the semiconductor wafers. The air-tight seal around the transport carrier may reduce defects of the semiconductor wafers that might otherwise be caused by the contaminants, may increase manufacturing yield and quality in the semiconductor fabrication facility, and/or may permit the continued reduction in device and/or feature sizes of integrated circuits and/or semiconductor devices that are to be formed on semiconductor wafers.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: A semiconductor device includes a substrate and two fins protruding from the substrate. Each fin includes two source/drain (S/D) regions and a channel region. Each fin includes a top surface that remains flat across the S/D regions and the channel region. The semiconductor device also includes a gate stack engaging each fin at the respective channel region, a first dielectric layer on sidewalls of the gate stack, a first epitaxial layer over top and sidewall surfaces of the S/D regions of the two fins, and a second epitaxial layer over top and sidewall surfaces of the first epitaxial layer.

Abstract: A method for fabricating a package structure is provided. The method includes premixing cellulose nanofibrils (CNFs) and a graphene material in a solvent to form a solution; removing the solvent from the solution to form a composite filler; mixing a prepolymeric material with the composite filler to form a composite material; and performing a molding process using the composite material.

Abstract: A semiconductor device includes a first well region laterally separated from a second well region in a substrate, a shallow trench isolation (STI) structure laterally between the first well region and the second well region in the substrate, a first implant region of a dopant type opposite to a dopant type of the first well region in the substrate, disposed vertically lower than the STI structure and laterally between the first well region and a lateral center of the STI structure, and a second implant region of a dopant type opposite to a dopant type of the second well region in the substrate, disposed vertically lower than the STI structure and laterally between the second well region and the lateral center of the STI structure.

Abstract: The present disclosure is related to the six isomer structures (OBI-821-1990-V1A, OBI-821-1990-V1B, OBI-821-1990-V2A, OBI-821-1990-V2B, OBI-821-1858-A, and OBI-821-1858-B) of isolated OBI-821 adjuvant and the method for evaluating the quality thereof. The method of the present disclosure adopts hydrophilic interaction liquid chromatography (HILIC) and reverse phase high performance liquid chromatography (RP-HPLC) either alone or in tandem and is able to separate the isomers of OBI-821 adjuvant in the consequent chromatography. Accordingly, the quality of OBI-821 adjuvant can be further evaluated.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a device. The device applies Nso sensing beam vectors to Nso received signals at Nant antennas to obtain Nso measurements, respectively, Nso and Nant each being an integer greater than or equal to 1. The device determines a beam vector based on the Nso measurements and the Nso sensing beam vectors.

Abstract: The present invention provides a micro-action ratchet wrench. a wrench has a main hole arranged thereon and a first and a second arc surfaces recessed in the wall surface of the main hole for correspondingly forming the first and second chambers, so that the centerlines of the first and second chambers intersect with the center of the main hole to maintain a set angle. The main hole is coupled with a ratchet. The ratchet has an outer connection portion and an outer teeth portion. The first and second chambers are correspondingly equipped with the first and second detents and the first and second springs. The first and second detents are provided with pawls, the first and second springs actuate the corresponding first and second detents, so that the pawls of the first and second detents can differentially engage the outer teeth portion of the ratchet through the set angle configuration.

Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.

Abstract: A portable electronic device including a first body, a second body, a stand, and a hinge structure is provided. The stand has a first pivot part and a second pivot part opposite to the first pivot part, wherein the first pivot part is pivotally connected to the first body, and the second body is pivotally connected to the second pivot part. The hinge structure includes a first bracket secured to the second body, a second bracket secured to the second pivot part of the stand, a first movable base, a first shaft secured to the first bracket and pivoted to the first movable base, a second movable base, a second shaft secured to the first movable base and pivoted to the second movable base, and a sliding shaft fixed to the second movable base and slidably connected to the second bracket.

Abstract: A far infrared (FIR)-emitting composition includes a first polymer component and a silicon dioxide composite particle which is prepared by subjecting a tetraalkoxysilane and a compound represented by Formula (A) to hydrolysis and condensation polymerization: Y—Si(ORa)3??(A), wherein each Ra independently represents a C1-4 alkyl group or a C1-4 alkanoyl group, Y represents X—R1—, a non-substituted C1-18 linear alkyl group or a non-substituted C3-18 branched alkyl group, and X and R1 are defined as set forth in the Specification and Claims. A FIR-emitting fiber including the FIR-emitting composition is also disclosed.

Abstract: The invention provides an antenna subsystem with improved radiation performances. The antenna subsystem may comprise an antenna-in-module (AiM), an auxiliary structure being conductive, and a support structure being nonconductive and disposed between the AiM and the auxiliary structure. The AiM may comprise a base, and one or more radiators being conductive. The antenna subsystem may provide a spherical coverage by a combination of a first component of gain and a second component of gain. The auxiliary structure may be insulated from the one or more radiators, and may be configured for orienting a radiation pattern of the first component of gain and a radiation pattern of the second component of gain to two different directions respectively; and/or, causing the spherical coverage provided by the antenna subsystem to be broader than a spherical coverage provided by the AiM alone.

Abstract: The present invention relates to a method for measuring muscle mass, including: a first selection step, wherein a frame selection information is obtained by using a frame to select a fascia region from a provided computed tomography image under the condition that the window width ranges from 300 HU to 500 HU and the window level ranges from 40 HU to 50 HU, wherein the selected range of the fascia region includes a muscle; and a second selection step, wherein a muscle information of the muscle is obtained by calculating a pixel value in the frame-selected fascia region under the condition that the HU value of the CT image ranges from ?29 HU to 150 HU.

Abstract: A method for detecting defects in a semiconductor structure is provided. The method includes the following operations. A semiconductor structure having a plurality of conductive structures is received. An electron beam inspection operation is performed on the plurality of conductive structures of the semiconductor structure to obtain an inspection data, wherein a pulsed electron beam utilized in the electron beam inspection operation is selected from the group consisting of a nanosecond pulsed beam, a picosecond pulsed beam, and a femtosecond pulsed beam. A first conductive structure having a non-open defect is identified from the inspection data. A method for classifying semiconductor structure is also provided.

Abstract: One aspect of the present disclosure pertains to a method of forming a semiconductor structure. The method includes forming an active region over a substrate, forming a dummy gate layer over the active region, forming a hard mask layer over the dummy gate layer, forming a patterned photoresist over the hard mask layer, and performing an etching process to the hard mask layer and the dummy gate layer using the patterned photoresist, thereby forming patterned hard mask structures and patterned dummy gate structures. The patterned hard mask structures are formed with an uneven profile having a protruding portion. The protruding portion of each of the patterned hard mask structures has a first width, wherein each of the patterned dummy gate structures has a second width, and the first width is greater than the second width.

Abstract: Persistent storage contains a parent table and one or more child tables, the parent table containing: a class field specifying types, and one or more filter fields. One or more processors may: receive a first request to read first information of a first type for a first entity; determine that, in a first entry of the parent table for the first entity, the first type is specified in the class field; obtain the first information from a child table associated with the first type; receive a second request to read second information of a second type for a second entity; determine that, in a second entry of the parent table for the second entity, the second type is indicated as present by a filter field that is associated with the second type; and obtain the second information from a set of additional fields in the second entry.