Patents by Inventor An-Hsun Lo

An-Hsun Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12149211
    Abstract: A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first transconductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: November 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: An-Hsun Lo, Wen-Sheng Chen, En-Hsiang Yeh, Tzu-Jin Yeh
  • Publication number: 20230127322
    Abstract: A semiconductor device includes: a polygonal inductive device disposed on a first layer on a substrate, the polygonal inductive device including a first line portion; a first conductive line disposed on a second layer on the substrate; a second conductive line disposed on a third layer on the substrate; and a first conductive via arranged to electrically couple the second conductive line to the first conductive line; wherein the first layer is different from the second layer and the third layer, the first conductive line is electrically connected to a reference voltage, and the first conductive line crosses the first line portion viewing from a top of the semiconductor device.
    Type: Application
    Filed: December 21, 2022
    Publication date: April 27, 2023
    Inventors: WEN-SHENG CHEN, AN-HSUN LO, EN-HSIANG YEH, TZU-JIN YEH
  • Patent number: 11569164
    Abstract: A semiconductor device includes: a polygonal inductive device disposed on a first layer on a substrate, the polygonal inductive device including a first line portion; a first conductive line disposed on a second layer on the substrate; a second conductive line disposed on a third layer on the substrate; and a first conductive via arranged to electrically couple the second conductive line to the first conductive line; wherein the first layer is different from the second layer and the third layer, the first conductive line is electrically connected to a reference voltage, and the first conductive line crosses the first line portion viewing from a top of the semiconductor device.
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: January 31, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wen-Sheng Chen, An-Hsun Lo, En-Hsiang Yeh, Tzu-Jin Yeh
  • Publication number: 20220385251
    Abstract: A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first transconductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.
    Type: Application
    Filed: August 8, 2022
    Publication date: December 1, 2022
    Inventors: An-Hsun LO, Wen-Sheng CHEN, En-Hsiang YEH, Tzu-Jin YEH
  • Patent number: 11456710
    Abstract: A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first transconductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.
    Type: Grant
    Filed: October 5, 2020
    Date of Patent: September 27, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: An-Hsun Lo, Wen-Sheng Chen, En-Hsiang Yeh, Tzu-Jin Yeh
  • Patent number: 10985618
    Abstract: A wireless transmitter includes a an amplifier; and a switchable transformer, coupled to the amplifier, wherein the amplifier is configured to be coupled to the switchable transformer in first and second configurations, wherein the first configuration causes the amplifier to provide a first output impedance to the switchable transformer, and wherein the second configuration causes the amplifier to provide a second output impedance to the switchable transformer, the first and second output impedances being different from each other.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: April 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Sheng Chen, An-Hsun Lo, En-Hsiang Yeh, Tzu-Jin Yeh
  • Publication number: 20210021240
    Abstract: A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first transconductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.
    Type: Application
    Filed: October 5, 2020
    Publication date: January 21, 2021
    Inventors: An-Hsun LO, Wen-Sheng Chen, En-Hsiang Yeh, Tzu-Jin Yeh
  • Patent number: 10797655
    Abstract: A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first transconductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.
    Type: Grant
    Filed: November 4, 2016
    Date of Patent: October 6, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: An-Hsun Lo, Wen-Sheng Chen, En-Hsiang Yeh, Tzu-Jin Yeh
  • Publication number: 20200279808
    Abstract: A semiconductor device includes: a polygonal inductive device disposed on a first layer on a substrate, the polygonal inductive device including a first line portion; a first conductive line disposed on a second layer on the substrate; a second conductive line disposed on a third layer on the substrate; and a first conductive via arranged to electrically couple the second conductive line to the first conductive line; wherein the first layer is different from the second layer and the third layer, the first conductive line is electrically connected to a reference voltage, and the first conductive line crosses the first line portion viewing from a top of the semiconductor device.
    Type: Application
    Filed: May 21, 2020
    Publication date: September 3, 2020
    Inventors: WEN-SHENG CHEN, AN-HSUN LO, EN-HSIANG YEH, TZU-JIN YEH
  • Patent number: 10672704
    Abstract: A semiconductor device includes: a polygonal inductive device disposed on a first layer on a substrate, the polygonal inductive device including a first line portion; a first conductive line disposed on a second layer on the substrate; a second conductive line disposed on a third layer on the substrate; and a first conductive via arranged to electrically couple the second conductive line to the first conductive line; wherein the first layer is different from the second layer and the third layer, the first conductive line is electrically connected to a reference voltage, and the first conductive line crosses the first line portion viewing from a top of the semiconductor device.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: June 2, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wen-Sheng Chen, An-Hsun Lo, En-Hsiang Yeh, Tzu-Jin Yeh
  • Publication number: 20200067351
    Abstract: A wireless transmitter includes a an amplifier; and a switchable transformer, coupled to the amplifier, wherein the amplifier is configured to be coupled to the switchable transformer in first and second configurations, wherein the first configuration causes the amplifier to provide a first output impedance to the switchable transformer, and wherein the second configuration causes the amplifier to provide a second output impedance to the switchable transformer, the first and second output impedances being different from each other.
    Type: Application
    Filed: October 28, 2019
    Publication date: February 27, 2020
    Inventors: Wen-Sheng Chen, An-Hsun Lo, En-Hsiang Yeh, Tzu-Jin Yeh
  • Patent number: 10491046
    Abstract: A wireless transmitter includes a an amplifier; and a switchable transformer, coupled to the amplifier, wherein the amplifier is configured to be coupled to the switchable transformer in first and second configurations, wherein the first configuration causes the amplifier to provide a first output impedance to the switchable transformer, and wherein the second configuration causes the amplifier to provide a second output impedance to the switchable transformer, the first and second output impedances being different from each other.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: November 26, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Sheng Chen, An-Hsun Lo, En-Hsiang Yeh, Tzu-Jin Yeh
  • Publication number: 20190164886
    Abstract: A semiconductor device includes: a polygonal inductive device disposed on a first layer on a substrate, the polygonal inductive device including a first line portion; a first conductive line disposed on a second layer on the substrate; a second conductive line disposed on a third layer on the substrate; and a first conductive via arranged to electrically couple the second conductive line to the first conductive line; wherein the first layer is different from the second layer and the third layer, the first conductive line is electrically connected to a reference voltage, and the first conductive line crosses the first line portion viewing from a top of the semiconductor device.
    Type: Application
    Filed: April 27, 2018
    Publication date: May 30, 2019
    Inventors: WEN-SHENG CHEN, AN-HSUN LO, EN-HSIANG YEH, TZU-JIN YEH
  • Patent number: 10277171
    Abstract: An amplifying unit includes a converter and a feedback mechanism. The converter has a supply input coupled to a supply node. The converter further has an input terminal configured to receive an input signal. The converter is configured to amplify the input signal from the input terminal to generate an output signal. The feedback mechanism is coupled to the input terminal of the converter and is configured to cause a constant bias current to flow from the supply node through the converter based on the input signal.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: April 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company Limted
    Inventors: An-Hsun Lo, En-Hsiang Yeh, Tzu-Jin Yeh, Wen-Sheng Chen
  • Publication number: 20180198418
    Abstract: An amplifying unit includes a converter and a feedback mechanism. The converter has a supply input coupled to a supply node. The converter further has an input terminal configured to receive an input signal. The converter is configured to amplify the input signal from the input terminal to generate an output signal. The feedback mechanism is coupled to the input terminal of the converter and is configured to cause a constant bias current to flow from the supply node through the converter based on the input signal.
    Type: Application
    Filed: July 5, 2017
    Publication date: July 12, 2018
    Inventors: An-Hsun Lo, En-Hsiang Yeh, Tzu-Jin Yeh, Wen-Sheng Chen
  • Publication number: 20180131332
    Abstract: A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first trans conductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.
    Type: Application
    Filed: November 4, 2016
    Publication date: May 10, 2018
    Inventors: An-Hsun LO, Wen-Sheng CHEN, En-Hsiang YEH, Tzu-Jin YEH
  • Publication number: 20180115198
    Abstract: A wireless transmitter includes a an amplifier; and a switchable transformer, coupled to the amplifier, wherein the amplifier is configured to be coupled to the switchable transformer in first and second configurations, wherein the first configuration causes the amplifier to provide a first output impedance to the switchable transformer, and wherein the second configuration causes the amplifier to provide a second output impedance to the switchable transformer, the first and second output impedances being different from each other.
    Type: Application
    Filed: October 20, 2016
    Publication date: April 26, 2018
    Inventors: Wen-Sheng CHEN, An-Hsun LO, En-Hsiang YEH, Tzu-Jin YEH
  • Patent number: 9748900
    Abstract: A device is disclosed that includes a first gain stage and a first amplifier. The first gain stage is configured to generate a first signal according to a first input signal, and to multiply the first signal and the first input signal, to generate a second signal at a first output terminal, in which the first signal is associated with the even order signal components of the first input signal. The first amplifier is configured to amplify the first input signal to generate a third signal at the first output terminal, in order to output a first output signal with the first gain stage, in which the first output signal is the sum of the second signal and the third signal.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: August 29, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: En-Hsiang Yeh, An-Hsun Lo, Tzu-Jin Yeh
  • Publication number: 20170194910
    Abstract: A device is disclosed that includes a first gain stage and a first amplifier. The first gain stage is configured to generate a first signal according to a first input signal, and to multiply the first signal and the first input signal, to generate a second signal at a first output terminal, in which the first signal is associated with the even order signal components of the first input signal. The first amplifier is configured to amplify the first input signal to generate a third signal at the first output terminal, in order to output a first output signal with the first gain stage, in which the first output signal is the sum of the second signal and the third signal.
    Type: Application
    Filed: December 30, 2015
    Publication date: July 6, 2017
    Inventors: En-Hsiang YEH, An-Hsun LO, Tzu-Jin YEH
  • Patent number: 9477245
    Abstract: A voltage-to-current converter is disclosed. The voltage to current converter includes a converter circuit having an input node, an amplified signal node and an output. The input node is configured to receive a sinusoidal voltage signal and the output is configured to provide a half-wave current signal. A transistor having a gate, a source, and a drain is coupled to the input node. The input node is coupled to one of the source or the drain. The amplified signal node is coupled to the gate. A process tracking stabilizer is coupled to the transistor at the source or the drain not coupled to the input node. The process tracking stabilizer is configured to generate a control voltage for the transistor. The control voltage is configured to maintain a predetermined non-zero voltage at the input node of the converter circuit during a negative cycle of the sinusoidal voltage signal.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: October 25, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: En-Hsiang Yeh, Tzu-Jin Yeh, An-Hsun Lo