Abstract: Video encoding methods and apparatuses in a video encoding system receive an input residual signal of a current block by a shared transform circuit, apply horizontal transform and vertical transform by a shared transform circuit to generate transform coefficients, apply quantization and inverse quantization to generate recovered transform coefficients, apply inverse vertical transform and inverse horizontal transform to the recovered transform coefficients by the shared transform circuit to generate a reconstructed residual signal for the current block, and encode the current block based on quantized levels of the current block. The shared transform circuit and a coefficient buffer in the folded 4-time transform architecture reuse computation resources in each transform stage. In some embodiments of the folded 4-time transform architecture, a hierarchical design for block size grouping is implemented with fixed throughput for uniform hardware scheduling.

Abstract: A memory device includes a plurality of word lines (WLs). The memory device includes a plurality of drivers that are each configured to control a corresponding one of the plurality of WLs and each comprise a first transistor having a first conductive type and a second transistor having a second conductive type. The first transistor of a first one of the drivers is formed in a first well of a substrate, and the second transistor of the first driver is formed in a second well of the substrate. The first well is spaced apart from the second well.

Abstract: Costs may be avoided and yields improved by applying scanning probe microscopy to substrates in the midst of an integrated circuit fabrication process sequence. Scanning probe microscopy may be used to provide conductance data. Conductance data may relate to device characteristics that are normally not available until the conclusion of device manufacturing. The substrates may be selectively treated to ameliorate a condition revealed by the data. Some substrates may be selectively discarded based on the data to avoid the expense of further processing. A process maintenance operation may be selectively carried out based on the data.

Abstract: Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.

Abstract: The present disclosure relates to a method useful in the determination of adult Still's disease (ASD). More specifically, the present disclosure relates to (I) a method for testing adult Still's disease, including (1) measuring a denatured CRP concentration in a blood sample collected from a subject; and (2) comparing the measured denatured CRP concentration and/or an index value based on the denatured CRP concentration with a reference value; (II) a denatured CRP-specific antibody; and (III) a kit for testing adult Still's disease.

Abstract: A semiconductor structure includes first and second epitaxial features, at least one semiconductor channel layer connecting the first and second epitaxial features, and a gate structure engaging the semiconductor channel layer. The first and second epitaxial features, the semiconductor channel layer, and the gate structure are at a frontside of the semiconductor structure. The semiconductor structure also includes a backside metal wiring layer at a backside of the semiconductor structure, and a backside conductive contact electrically connecting the first epitaxial feature to the backside metal wiring layer. The backside metal wiring layer is spaced away from the gate structure with an air gap therebetween.

Abstract: A photonic polarizing beamsplitter is disclosed. The beamsplitter comprises a first waveguide, a second waveguide located above the first waveguide, and a birefringent coupler between the first waveguide and the second waveguide. The birefringent coupler has an effective refractive index for a TM mode which is greater than a refractive index of the first waveguide, and an effective refractive index for a TE mode which is less than the refractive index of the first waveguide. The second waveguide comprises a plurality of outwardly tapering legs with a gap between adjacent legs that are connected downstream to a body. The vertical beamsplitter uses less surface area.

Abstract: A system and method for cleaning ring frames is disclosed. In one embodiment, a ring frame processing system includes: a plurality of blades for mechanically removing tapes and tape residues from surfaces of a ring frame; a plurality of wheel brushes for conditioning the surfaces of the ring frame; and a transport mechanism for transporting the ring frame.

Abstract: An electronic device includes a substrate, a first transistor, a second transistor and a conductor. The first transistor is disposed on the substrate and comprises an oxide semiconductor layer. The second transistor is disposed on the substrate and comprises a silicon semiconductor layer. The conductor is electrically connected to the oxide semiconductor layer and the silicon semiconductor layer.

Abstract: A semiconductor device includes a first layer structure, a second layer structure, a bridge die, a first SoC and a second SoC. The bridge die is disposed between the first layer structure and the second layer structure. The first SoC and the second SoC are disposed on the second layer structure. The first SoC and the second SoC are electrically connected through the bridge die.

Abstract: A prebiotic food product which increases a short-chain fatty acid in an intestine is provided, where the prebiotic food product mainly contains a fermented composition obtained by fermenting and maturing a plurality of ingredients including fruits, citrus, root vegetables such as a burdock and a carrot, cereals, sesames, seaweeds and saccharoses.

Abstract: A vertical grating coupler is disclosed. The grating coupler includes a first waveguide having a first grating, a second waveguide having a second grating, and a dielectric layer positioned between the first waveguide and the second waveguide. The first grating includes a plurality of first grating ridges separated by a plurality first grating gaps, and the second grating includes a plurality of second grating ridges separated by a plurality second grating gaps. The first grating, the second grating, and the dielectric layer are located in a vertical overlap region between the first waveguide and the second waveguide. The first grating and the second grating have different grating periods, and each of the plurality of first grating gaps and second grating gaps are filled with the dielectric layer.

Abstract: A method for preparing an electrochemiluminescent nanoprobe according to an embodiment includes: adding a metal complex ion to an inorganic oxide nanoparticle to provide a metal-doped inorganic oxide nanoparticle; and binding a secondary antibody to the metal-doped inorganic oxide nanoparticle to provide a metal-doped inorganic oxide nanoparticle modified with the secondary antibody. The secondary antibody is configured to identify a specific antibody against nucleic acid-specific site modification.

Abstract: A semiconductor structure includes a fin disposed on a substrate, the fin including a channel region comprising a plurality of channels vertically stacked over one another, the channels comprising germanium distributed therein. The semiconductor structure further includes a gate stack engaging the channel region of the fin and gate spacers disposed between the gate stack and the source and drain regions of the fin, wherein each channel of the channels includes a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers, wherein a concentration of germanium in the middle section of the channel is higher than a concentration of germanium in the two end sections of the channel, and wherein the middle section of the channel further includes a core portion and an outer portion surrounding the core portion with a germanium concentration profile from the core portion to the outer portion.

Abstract: Provided is a nucleic acid construct, including the following elements: a transposon 3? terminal repeat, first poly A sequence, an insulator sequence having a transcription termination function, a transposon 5? terminal repeat, a transposase coding sequence, and a promoter that controls the expression of the transposase. Also provided are a host cell or pharmaceutical composition including said nucleic acid construct, and a use thereof.

Abstract: A method for making a middle-of-line interconnect structure in a semiconductor device includes forming, near a surface of a first interconnect structure comprised of a first metal, a region of varied composition including the first metal and a second element. The method further includes forming a recess within the region of varied composition. The recess laterally extends a first distance along the surface and vertically extends a second distance below the first surface. The method further includes filling the recess with a second metal to form a second interconnect structure that contacts the first interconnect structure.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

Abstract: A circuit includes a first power node having a first voltage level, a second power node having a second voltage level different from the first voltage level, a reference node having a reference voltage level, a master latch that outputs a first bit based on a received bit, a slave latch that outputs a second bit based on the first bit and an output bit based on a selected one of the first bit or a third bit, a first level shifter that outputs the third bit based on a complementary bit pair, and a retention latch including a second level shifter and a pair of inverters that outputs the complementary bit pair based on the second bit. The slave latch and the first level shifter are coupled between the first power and reference nodes, and the retention latch is coupled between the second power and reference nodes.

Abstract: An inductor device includes a hollow magnetic core and at least one winding assembly. The winding assembly includes a plurality of conductive structures and U-shaped conductors, and the conductive structures are below the hollow magnetic core. The conductive structures are arranged along a segment of the hollow magnetic core, and the U-shaped conductors are across the hollow magnetic core and arranged along the segment of the hollow magnetic core. Two ends of at least one of the U-shaped conductor are respectively in contact with two of the conductive structures such that the U-shaped conductors and the conductive structures are electrically connected to each other and collectively continuously surround the segment of the hollow magnetic core.

Abstract: An attachment configured for use with a food processing system includes a container configurable with a food processing base of the food processing system. The container has a processing chamber. The processing chamber has a first configuration adjacent a first end of said container and a distinct second configuration adjacent a second end of said container, said second configuration being circular.