Abstract: A super-resolution image reconstruction apparatus based on a classified dictionary database. The apparatus can select, from a training image, a first local block and a corresponding second down-sampled local block, extract corresponding features and combine the features into a dictionary group, and perform classification and pre-training on multiple dictionary groups by using calculated values of an LBS and an SES as classification marks, so as to obtain a classified dictionary database of multiple dictionary groups with classification marks. During image reconstruction, local features of a local block on an image to be reconstructed are extracted, the LBS and SES classification of the local block is matched with the LBS and SES classification of each dictionary in the classified dictionary database, so that matched dictionaries can be rapidly obtained, and lastly, image reconstruction is performed on the image to be reconstructed by using the matched dictionaries.

Abstract: Plasmonic avalanche photodetection employs an optical antenna and an avalanche photodiode (APD) coupled to the optical antenna. Hot carriers generated by light incident on the optical antenna are received in an avalanche multiplication region of the APD where avalanche multiplication of the hot carriers is provided.

Abstract: The present application discloses a method for manufacturing a display substrate. The method comprises: coating all regions of a base substrate with an alignment film; performing a rubbing process on the base substrate coated with the alignment film; and removing the alignment film outside a display region of the base substrate by a photolithography process so as to retain only the alignment film in the display region. The present application further discloses a display substrate manufactured by such a manufacturing method, as well as a liquid crystal cell and a display comprising such a display substrate.

Abstract: Disclosed herein are hard disk drive sliders having one or more tunnels between the leading-edge surface of the slider and the air-bearing surface (ABS) that may be used to control the pitch and/or fly height of the slider. A slider comprises a leading-edge surface, an ABS, and a tunnel having an entry area at the leading-edge surface and an exit area at the ABS, the tunnel for directing gas impinging on the entry area through the slider and out the exit area toward a surface of a hard disk. The tunnel may be a convergent tunnel. The tunnel may include two or more branches.

Abstract: Methods, computer readable media, and wireless apparatuses are disclosed for a TXOP duration field. An apparatus is disclosed comprising processing circuitry configured to: encode a first high efficiency (HE) physical-layer convergence procedure (PLCP) protocol data unit (PPDU) comprising a transmission opportunity (TXOP) duration field in a first physical-layer portion of the first HE PPDU. The processing circuitry may be further configured to set the TXOP duration field value to indicate a largest duration value representable by the TXOP duration field that is equal to or less than a duration value indicated by the first MAC duration field, if the first HE PPDU is to include a first media access control (MAC) duration field in a first MAC-layer portion of the first HE PPDU.

Abstract: Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including forming a first hard mask layer over a semiconductor device layer, forming a set of mandrels over the first hard mask layer, and forming a first spacer layer over the set of mandrels and the first hard mask layer. The method further includes forming a second spacer layer over the first spacer layer, patterning the first spacer layer and the second spacer layer to form a mask pattern, and patterning the first hard mask layer using the mask pattern as a mask.

Abstract: Compounds that modulate the oxidoreductase enzyme indoleamine 2,3-dioxygenase, and compositions containing the compounds, are described herein. The use of such compounds and compositions for the treatment and/or prevention of a diverse array of diseases, disorders and conditions, including cancer- and immune-related disorders, that are mediated by indoleamine 2,3-dioxygenase is also provided.

Abstract: Methods of treating a subterranean formation penetrated by a well bore, by providing a treatment fluid comprising a blend including a first amount of particulates having a first average particle size between about 3 mm and 2 cm and a second amount of particulates having a second average size between about 1.6 and 20 times smaller than the first average particle size or a second amount of flakes having a second average size up to 10 times smaller than the first average particle size; by introducing the treatment fluid into the well bore; and by creating a plug with the treatment fluid.

Abstract: A computer-implemented method for identifying abnormal computer behavior includes receiving, at a computer server subsystem, data that characterizes subsets of particular document object models for web pages rendered by particular client computers; identifying clusters from the data that characterize the subsets of the particular document object models; and using the clusters to identify alien content on the particular client computers, wherein the alien content comprises content in the document object models that is not the result of content that is the basis of the document object model served.

Abstract: A cache directory processing method for a multi-core processor system, and directory controllers is presented. The method includes obtaining a first directory entry corresponding to first-type storage space in shared storage space of the multi-core processor system and in a directory of the shared storage space; performing a directory entry combination operation on the first directory entry according to each directory entry in the first directory entry and according to an access type and a sharer, to form a second directory entry of the first-type storage space; and when a record quantity of the second directory entry is less than a record quantity of the first directory entry, replacing the first directory entry with the second directory entry, and using the second directory entry as a directory entry corresponding to the first-type storage space and in the directory of the shared storage space.

Abstract: In an embodiment, an apparatus to be employed in a user equipment (UE) is described. The apparatus includes configuration circuitry operable to determine, based on one or more configuration information messages, a measurement gap for a master evolved Node B (MeNB) that is operable to provide a master cell group (MCG) that is asynchronous with a secondary cell group (SCG) of a secondary evolved Node B (SeNB), wherein subframe boundaries of the MCG are different from subframe boundaries of the SCG; and radio frequency (RF) control circuitry operable to cause RF circuitry to be tuned, at a beginning of the measurement gap based on a subframe boundary of the MCG, to start inter-frequency measurements, wherein the RF circuitry is to be used to transmit or receive data in a serving cell of the MCG and in a serving cell of the SCG. Other embodiments are also described and claimed.

Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate has an active region. The semiconductor substrate is doped with first dopants with a first-type conductivity. The active region is adjacent to the first surface and doped with second dopants with a second-type conductivity. The semiconductor device structure includes a doped layer over the second surface and doped with third dopants with the first-type conductivity. A first doping concentration of the third dopants in the doped layer is greater than a second doping concentration of the first dopants in the semiconductor substrate. The semiconductor device structure includes a conductive bump over the doped layer.

Abstract: In one embodiment, an online social network accesses a social graph that includes a number of place-entity nodes each corresponding to a place-entity, and a number of user nodes each corresponding to a user. A heterogeneous graph is generated based on the place-entity nodes, user nodes, and n-gram nodes, each n-gram node corresponding to an n-gram in the name of at least one place-entity. Each n-gram node is connected to corresponding place-entity nodes containing the n-gram, and user nodes with a social networking interaction with the corresponding place-entity nodes. Each place-entity node is assigned an initial quality-score. The quality-scores are propagated through the redirection graph based on the connections between the place-entity nodes, the n-gram nodes, and the user nodes. A final quality-score is assigned to each place-entity node when the propagation of the quality-scores through the redirection graph reaches convergence.

Abstract: A device includes a transistor formed over a substrate. The transistor includes a source structure, a drain structure, and a gate structure. A dielectric layer is formed over the transistor, and a plurality of vias are electrically connected to the source structure. A metal layer is formed over the dielectric layer. The metal layer includes a field plate over the gate structure, a plurality of contact pads over each via, and a plurality of fingers interconnecting each one of the plurality of contact pads to the field plate.

Abstract: Disclosed herein are methods and systems for recovering carbon fibers from objects. The object may include carbon fibers and resin. The object may be contacted with an electric current to separate the carbon fibers from the resin.

Abstract: Disclosed herein is a hard disk drive slider having an extended three-dimensional air-bearing surface (ABS). The slider has an ABS and a back surface opposite the ABS, where at least a portion of the back surface defines a plane (i.e., if the back surface is substantially flat, the back surface itself defines the plane). Defined herein is an ABS function, which describes the characteristics of a portion of the ABS in a two-dimensional plane made by taking a cross-section of the slider perpendicular to the plane defined by the at least a portion of the back surface. The cross-section of the slider taken perpendicular to the plane has an ABS function that is a multi-valued function, which is defined herein as a relation for which, for at least one possible input value along the selected axis in the plane, the relation evaluates to two or more distinct nonzero values.

Abstract: Exemplary embodiments of a product display assembly are provided for displaying various sized products in modules of varying sizes. A product display assembly can be provided, having one or more shelves provided along a width of the product display assembly, a plurality of hang extrusions provided along a length of a bottom portion of each of the shelves, wherein each hang extrusion comprises a top portion, a vertical portion extending from the top portion, and a base portion extending from the vertical portion, a plurality of hanging mechanisms each having a first end configured to be supported by the base portion of the hang extrusion and a second end, and one or more modules configured to display products therein and connected to a second end of the hanging mechanism for supporting the module on the shelf.

Abstract: A semiconductor device includes a substrate, a first well formed in the substrate, a second well formed in the substrate, a first fin formed on the first well, and a second fin formed on the second well. The first well includes a first conductivity type, the second well includes a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other. The substrate includes a first semiconductor material. The first fin and the second fin include the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The first semiconductor material in the first fin includes a first concentration, the first semiconductor material in the second fin includes a second concentration, and the second concentration is larger than the first concentration.

Abstract: A method and apparatus for quantifying an activity of a chemical plating solution in a chemical plating system is disclosed. The method comprises performing an electrochemical impedance spectrum (EIS) measurement on one or more chemical plating solutions in the chemical plating system, processing data for each EIS measurement result to obtain a corresponding charge transfer resistance value, obtaining a correspondence between the activity and the charge transfer resistance value in each chemical plating solution, and quantifying the activity of each chemical plating solution in the chemical plating system using the correspondence to the charge transfer resistance value.