Abstract: A liquid crystal display panel includes a first substrate, a second substrate, at least one liquid crystal layer, a first pixel array and a second pixel array. The liquid crystal layer is interposed between the first substrate and the second substrate. The first pixel array is disposed in a first display region of the first substrate, where the first pixel array includes a plurality of first transmissive sub-pixels arranged in columns and rows and disposed adjacent to each other. The second pixel array is disposed in a second display region of the first substrate, and the second pixel array includes a plurality of reflective sub-pixels arranged in columns and rows.

Abstract: A self-etching and self-adhesive dental restorative composition is described herein. The composition includes a polymerizable compound having at least one phosphorus containing acidic group, a polymerizable compound having at least one carboxylic acid group, and a copolymerizable multi-functional (meth)acrylate monomers. Compositions described herein demonstrate adhesion to dentin and enamel and are useful as a cavity filler, dental pit and fissure sealants, and restoratives.

Abstract: Method and systems for controlling a hybrid network having software-defined network (SDN) switches and legacy switches include initializing a hybrid network topology by retrieving information on a physical and virtual infrastructure of the hybrid network; generating a path between two nodes on the hybrid network based on the physical and virtual infrastructure of the hybrid network; generating a virtual local area network by issuing remote procedure call instructions to legacy switches in accordance with a network configuration request; and generating an SDN network slice by issuing SDN commands to SDN switches in accordance with the network configuration request.

Abstract: Embodiments of the present invention provide a capability negotiation method, system and apparatus, which are applied to the field of communications, and can improve the flexibility of capability negotiation. The capability negotiation method is applied to a base station, including: acquiring a gateway capability identifier, where the gateway capability identifier is a description of an end to end quality of service EtoE QoS control capability of a gateway; parsing the gateway capability identifier to obtain the EtoE QoS control capability of the gateway; and determining whether the EtoE QoS control capability of the gateway matches a local EtoE QoS control capability, so that when the EtoE QoS control capability of the gateway matches the local EtoE QoS control capability, EtoE QoS control is established.

Abstract: A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.

Abstract: This invention is about a cell-penetrating drug carrier and the application thereof. The mentioned cell-penetrating drug carrier can approach the target cell through using a proper recognizable sequence, so that the cell-penetrating drug carrier can be used to specifically delivery wanted drug to target cell. Through carrying wanted drug into the cytoplasm of the target cell by cell-penetrating peptide, the drug accumulation volume in the target cell can be efficiently increased. Preferably, through using proper bioinert polymer, the cell-penetrating peptide and the recognizable sequence can be kept from been digested before approaching the target cell.

Abstract: An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has a transistor region and a transparent region adjacent to each other. The gate electrode is disposed on the transistor region. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region has a second thickness less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are electrically connected to the channel layer. The pixel electrode is disposed on the dielectric layer which is disposed on the transparent region. The pixel electrode is electrically connected to the drain electrode.

Abstract: A pixel structure includes a substrate, a patterned semiconductor layer, an insulation layer, a gate electrode, a first inter-layer dielectric (ILD) layer, a second ILD layer, a third ILD layer, a source electrode and a drain electrode. The patterned semiconductor layer is disposed on the substrate. The insulation layer is disposed on the patterned semiconductor layer. The gate electrode is disposed on the insulation layer. The first ILD layer is disposed on the gate electrode, the second ILD layer is disposed on the first ILD layer, and the third ILD layer is disposed on the second ILD layer. The source electrode and the drain electrode are disposed on the third ILD layer, wherein the source electrode and the drain electrode are electrically connected to the patterned semiconductor layer via a first contact window and a second contact window respectively.

Abstract: A semiconductor device and a method of manufacturing the same are provided. A semiconductor device comprises a substrate, a conductive pattern formed on the substrate, and at least a conductive pillar having a predetermined height formed on the conductive pattern. The conductive pillar can be formed under a focus ion beam (FIB) or an electron beam environment. In one embodiment, a diameter of the conductive pillar is no more than 10 ?m.

Abstract: A cleaning composition is provided. The cleaning composition includes at least one polyamino-polycarboxylic acid or at least one salt thereof, at least one solvent, at least one substituted or non-substituted phenethylamine and water. The solvent is selected from a group consisting of glycols.

Abstract: A luminescent coating is disclosed that is used to dimensionally control the curing of a photocurable agent placed in close contact with the coating. The coating is applied at the interface of structures, such as brackets and prosthetics, or may be applied directly on a curable material for use in 3D printing, at the location where bonding material is needed to be cured. The luminescent coating irradiates from its structure the curing radiations necessary to photopolymerize the resin in response to a first radiation irradiated on its structure of a different wavelength.

Abstract: A pixel structure includes a substrate, a patterned semiconductor layer, an insulation layer, a gate electrode, a first inter-layer dielectric (ILD) layer, a second ILD layer, a third ILD layer, a source electrode and a drain electrode. The patterned semiconductor layer is disposed on the substrate. The insulation layer is disposed on the patterned semiconductor layer. The gate electrode is disposed on the insulation layer. The first ILD layer is disposed on the gate electrode, the second ILD layer is disposed on the first ILD layer, and the third ILD layer is disposed on the second ILD layer. The source electrode and the drain electrode are disposed on the third ILD layer, wherein the source electrode and the drain electrode are electrically connected to the patterned semiconductor layer via a first contact window and a second contact window respectively.

Abstract: Provided is a polishing slurry composition, including a non-ionic surfactant represented by the following formula (1) R—(OCH2CH2)x—OH??formula (1) wherein x is an integer from 1 to 50, and R is selected from a group consisting of a C3-C50 alkyl group, a C6-C55 benzylalkyl group and a C6-C55 phenylalkyl group.

Abstract: A pre-embedded piece includes a reinforcing steel bar and a screw rod. The reinforcing steel bar includes a body and an embossed portion formed on an outer periphery of the body. An end of the screw rod is connected to an end of the reinforcing steel bar. A method for producing a pre-embedded piece includes preparing a reinforcing steel bar and a screw rod. The reinforcing steel bar includes a body and an embossed portion formed on an outer periphery of the body. The reinforcing steel bar and the screw rod are placed end to end and fused together. A reinforcing steel structure of an embodiment includes a plurality of main bars, a plurality of hooped columns, and a plurality of pre-embedded pieces. A reinforcing steel structure of another embodiment includes a plurality of hooped columns and a plurality of pre-embedded pieces.

Abstract: A dental composite composition is disclosed that includes a polymerizable resin, filler particles, and at least one polymerizable stable radical. A variety of polymerizable stable radicals may be employed, including those that have a 2,2,6,6-tetramethylpiperidinyl-1-oxyl moiety. Compositions as described herein exhibit excellent mechanical strength, hardness, and flexural modulus, while also significantly decreasing shrinkage stress caused by polymerization.

Abstract: A method for fabricating a pixel structure includes the following steps. A patterned semiconductor layer, an insulation layer, and a patterned metal layer are formed on a substrate sequentially. A first inter-layer dielectric (ILD) layer is formed to cover the patterned metal layer. A low temperature annealing process is performed after forming the first ILD layer. A hydrogen plasma treatment process is performed after the low temperature annealing process. A second ILD layer is formed to cover the first ILD layer after the hydrogen plasma treatment process. A third ILD layer is formed to cover the second ILD layer. A source electrode and a drain electrode are formed on the third ILD layer. A passivation layer is formed on the source electrode and the drain electrode. A pixel electrode is formed on the passivation layer. A pixel structure manufactured by the above-mentioned method is also provided.

Abstract: A semiconductor device and a method of manufacturing the same are provided. A semiconductor device comprises a substrate, a conductive pattern formed on the substrate, and at least a conductive pillar having a predetermined height formed on the conductive pattern. The conductive pillar can be formed under a focus ion beam (FIB) or an electron beam environment. In one embodiment, a diameter of the conductive pillar is no more than 10 ?m.

Abstract: Disclosed are a process and catalysts useful for carrying out asymmetric methlyallylations. The catalysts used in the invention have the formula (IV): wherein X1, X2, R3 and R4 are as defined herein. Compounds made by the process of the invention can be used to prepare pharmaceutically active compounds such as 11-?-hydroxysteroid hydrogenase type 1 (11-?-HSD1) inhibitors including 1,3-disubstituted oxazinan-2-ones.

Abstract: Method and systems for controlling a hybrid network having software-defined network (SDN) switches and legacy switches include initializing a hybrid network topology by retrieving information on a physical and virtual infrastructure of the hybrid network; generating a path between two nodes on the hybrid network based on the physical and virtual infrastructure of the hybrid network; generating a virtual local area network by issuing remote procedure call instructions to legacy switches in accordance with a network configuration request; and generating an SDN network slice by issuing SDN commands to SDN switches in accordance with the network configuration request.

Abstract: A dental restorative composite and a method of curing the composite are disclosed in which the composite includes a polymerizable organic resin, a radiation activated initiator having an activation wavelength, an inert filler; and luminescent crystals, wherein the luminescent crystals emit radiation at a predetermined wavelength matching the initiator activation wavelength when the luminescent crystals are irradiated with radiation having a wavelength longer than the activation wavelength, the luminescent crystals being up-converting particles that result in those particles emitting radiation at a wavelength that initiates curing.