Abstract: A firing pin system is adapted for underwater shooting and includes a firing pin, a blocking cap, a spring, and a rear sleeve. The firing pin has a striking tip portion, a linking end portion, and a rod body having a head section, a tail section, and a neck section interconnecting and being narrower than the head and tail sections. The blocking cap is sleeved on the neck section and has a flange that is formed with a plurality of notches adapted for allowing passage of water therethrough. The rear sleeve is sleeved on the tail section and has a plurality of outer guiding grooves. The outer guiding grooves are adapted for allowing passage of water therethrough.

Abstract: An exogenous biomolecular tracing method includes: extracting a nucleotide marker from a marker source organism; combining a basic material with the nucleotide marker to form a nucleotide marked material; exogenously combining an aquatic creature or an aquatic product to form an exogenously-marked aquatic creature or an exogenously-marked aquatic product; and identifying a DNA sample from the exogenously-marked aquatic creature or the exogenously-marked aquatic product with at least one primer pair in an exogenous biomolecular tracing procedure to obtain an exogenously-marked identification result.

Abstract: In a method of manufacturing a semiconductor device, a lower conductive layer is formed in an opening formed in a dielectric layer, and the lower conductive layer is recessed to form a space. A blanket conductive layer is formed over the recessed lower conductive layer in the space, a sidewall of the space and an upper surface of the dielectric layer. Part of the blanket conductive layer formed on the sidewall of the opening and the upper surface of the dielectric layer is removed, thereby forming a upper conductive layer on the lower conductive layer, and a cap insulating layer is formed over the upper conductive layer in the space. The blanket conductive layer is formed by physical vapor deposition.

Abstract: A locking block is adapted to be mounted in a gun. The gun has a bias spring having a bias spring arm. The locking block includes two side bodies and a connecting body. The connecting body is connected between the two side bodies and has a bottom surface. The connecting body is formed with at least one positioning groove recessed upward from the bottom surface for catching the bias spring arm of the bias spring.

Abstract: A slide stop lever adapted to be disposed in a gun body, and has a pivoting section adapted to be pivoted to the gun body, and a latching section extending rearwardly from the pivoting section. The latching section has a rod portion extending rearwardly from the pivoting section, a latching portion protruding from the rod portion, and a pushed portion protruding from the rod portion and located lower than a top of the rod portion. The pushed portion is adapted to be pushed upwardly to move the latching section upwardly from an initial position to an abutment position, where the latching portion is adapted to be received in a latching groove of the Glock 43 series slide to prevent forward sliding movement of the Glock 43 series slide.

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The semiconductor device structure includes a cap layer over the gate stack. The semiconductor device structure includes a protective layer over the cap layer, wherein a lower portion of the protective layer extends into the cap layer. The semiconductor device structure includes a contact structure passing through the protective layer and the cap layer.

Abstract: Provides a method for adjusting a thermal field of silicon carbide single crystal growth, and steps comprise: (A) screening a silicon carbide source, and filling into a bottom of a graphite crucible; (B) placing a guide inside the graphite crucible; (C) placing a rigid heat conductive material on the guide, so that a gap between the guide and a crucible wall of the graphite crucible is reduced; (D) fixing a seed crystal on a top of the graphite crucible; (E) placing the graphite crucible equipped with the silicon carbide source and the seed crystal in an induction high-temperature furnace used by physical vapor transport method; (F) performing a silicon carbide crystal growth process; and (G) obtaining a silicon carbide single crystal.

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

Abstract: Provided is a method of enhancing silicon carbide monocrystalline growth yield, including the steps of: (A) filling a bottom of a graphite crucible with a silicon carbide raw material selected; (B) performing configuration modification on a graphite seed crystal platform; (C) fastening a silicon carbide seed crystal to the modified graphite seed crystal platform with a graphite clamping accessory; (D) placing the graphite crucible containing the silicon carbide raw material and the silicon carbide seed crystal in an inductive high-temperature furnace; (E) performing silicon carbide crystal growth process by physical vapor transport; and (F) obtaining silicon carbide monocrystalline crystals. The geometric configuration of the surface of the graphite seed crystal platform is modified to eradicate development of peripheral grain boundary.

Abstract: A droop reduction circuit on a die includes a voltage detector circuit to detect voltage droop in a supply voltage received by a first load. The droop reduction circuit further includes a driver controller circuit to drive power switch (PSH) banks in response to detection of the voltage droop. Each of the PSH banks includes at least one power switch having an input terminal, a gate terminal, and an output terminal. The input terminal is to receive a secondary voltage, which is higher than the supply voltage and is also received by a second load on the die. The gate terminal is to receive a drive signal from the driver controller, and the output terminal is to pull up the voltage droop in the supply voltage.

Abstract: A testing device includes a power supply and a plurality of testing ports. The testing ports are electrically connected to the power supply. Each of the testing ports includes a contact and a current clamper. The contact is configured to electrically couple a device under test (DUT). The current clamper is connected between the power supply and the contact and configured to allow a limited current having a predetermined current value to flow to the contact.

Abstract: A semiconductor device includes an interface layer on a substrate, a gate dielectric layer on the interface layer, and a work function metal layer on the gate dielectric layer. An interface between the interface layer and the gate dielectric layer has a concentration of a dipole-inducing element. The semiconductor device also includes an oxygen blocking layer on the work function metal layer and a metal fill layer on the oxygen blocking layer.

Abstract: A method of growing on-axis silicon carbide single crystal includes the steps of (A) sieving a silicon carbide source material by size, and only the part that has a size larger than 1 cm is adopted for use as a sieved silicon carbide source material; (B) filling the sieved silicon carbide source material in the bottom of a graphite crucible; (C) positioning an on-axis silicon carbide on a top of the graphite crucible to serve as a seed crystal; (D) placing the graphite crucible having the sieved silicon carbide source material and the seed crystal received therein in an induction furnace for the physical vapor transport process; (E) starting a silicon carbide crystal growth process; and (F) obtaining a silicon carbide single crystal.

Abstract: An embodiment includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes a first epitaxial source/drain region in the first fin and adjacent the first gate spacer, an outer surface of the epitaxial first source/drain region having more than eight facets in a first plane, the first plane being orthogonal to a top surface of the substrate.

Abstract: An interface connection method applied to a connection device. The connection device is configured to connect a host end having a first connection interface and a device end having a second connection interface. The interface connection method includes determining a voltage level of a detection pin; performing a first initialization when the detection pin is at a low level; providing an electrical power for detecting whether the electrical power is consumed or not when the detection pin is at a high level; sending a link signal when the electrical power is consumed; and performing a second initialization when the device end is detected to be in a ready state.

Abstract: A droop reduction circuit on a die includes a voltage detector circuit to detect voltage droop in a supply voltage received by a first load. The droop reduction circuit further includes a driver controller circuit to drive power switch (PSH) banks in response to detection of the voltage droop. Each of the PSH banks includes at least one power switch having an input terminal, a gate terminal, and an output terminal. The input terminal is to receive a secondary voltage, which is higher than the supply voltage and is also received by a second load on the die. The gate terminal is to receive a drive signal from the driver controller, and the output terminal is to pull up the voltage droop in the supply voltage.

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

Abstract: A pistol frame is suitable for mounting of a trigger mechanism which includes a trigger mechanism housing having a through channel. The pistol frame includes an upper frame portion defining a rear receiving space, and a rear rail block disposed in the rear receiving space and including a bottom plate, and two side plates extending upwardly the bottom plate. Each side plate has a through hole suitable for aligning with the through channel to permit extension of a trigger housing pin therethrough to thereby fix the rear rail block and the trigger mechanism housing to the upper frame portion. The bottom plate and the side plates cooperatively define at least one receiving space suitable for receiving the extensions.

Abstract: An interface connection method applied to a connection device. The connection device is configured to connect a host end having a first connection interface and a device end having a second connection interface. The interface connection method includes determining a voltage level of a detection pin; performing a first initialization when the detection pin is at a low level; providing an electrical power for detecting whether the electrical power is consumed or not when the detection pin is at a high level; sending a link signal when the electrical power is consumed; and performing a second initialization when the device end is detected to be in a ready state.