Abstract: An apparatus including: a transmitter output impedance matching circuit including an inductive element; a low noise amplifier (LNA) including a first field effect transistor (PET); a receiver input impedance matching circuit, including: a transformer including a first winding and a second winding; and a capacitor coupled in series with the first winding between a first end of the inductive element and a gate of the first FET, wherein the second winding is coupled to a second end of the inductive element; and a radio frequency (RF) port coupled between the first end of the inductive element and the capacitor.

Abstract: A method includes: positioning a wafer on an electrostatic chuck of a physical vapor deposition apparatus, the wafer including an opening exposing a conductive feature; setting a temperature of the wafer to a room temperature; forming a tungsten thin film in the opening by the physical vapor deposition apparatus, the tungsten thin film including a bottom portion that is on an upper surface of the conductive feature exposed by the opening, a top portion that is on an upper surface of a dielectric layer through which the opening extends and a sidewall portion that is on a sidewall of the dielectric layer exposed by the opening; removing the top portion and the sidewall portion of the tungsten thin film from over the opening; and forming a tungsten plug in the opening on the bottom portion by selectively depositing tungsten by a chemical vapor deposition operation.

Abstract: This application discloses electromagnetic energy mitigation assemblies and automotive vehicle components comprising the electromagnetic energy mitigation assemblies. An electromagnetic energy mitigation assembly includes a first electrically conductive layer and a second electrically conductive layer. First and second permalloy layers are along respective first and second opposite sides of the first electrically conductive layer. Third and fourth permalloy layers are along respective third and fourth opposite sides of the second electrically conductive layer. An electromagnetic noise suppression layer is sandwiched between the second and third permalloy layers. An automotive vehicle component includes an electromagnetic energy mitigation assembly configured to be positioned relative to one or more batteries of an automotive vehicle for providing electromagnetic shielding for the one or more batteries. The electromagnetic energy mitigation assembly includes a first electrically conductive layer.

Abstract: An electrically and thermally conductive gasket includes a resilient core including a plurality of sides, a heat spreader disposed along at least two sides of the plurality of sides of the resilient core, and an electrically conductive layer disposed along and/or covering at least a portion of the heat spreader, such that the portion of the heat spreader is between the resilient core and the electrically conductive layer. The gasket is positionable and/or compressible between first and second surfaces to thereby define an electrically conductive path and a thermally conductive path between the first and second surfaces.

Abstract: An embossing apparatus for producing a multilayer web product includes a first embossing assembly, a second embossing assembly, and at least one intermediate embossing assembly. A lapping roller is arranged adjacent to the first embossing assembly to lap at least one intermediate web product that is formed with an intermediate embossed pattern and a first web product that is formed with a first embossed pattern together to form a lapped web product. A glue applying device is arranged adjacent to the first embossing assembly to apply glue on one surface of the lapped web product. A laminating roller laminates the lapped web product and the second web product that is formed with a second embossed pattern together.

Abstract: An electrically and thermally conductive gasket includes a resilient core including a plurality of sides, a heat spreader disposed along at least two sides of the plurality of sides of the resilient core, and an electrically conductive layer disposed along and/or covering at least a portion of the heat spreader, such that the portion of the heat spreader is between the resilient core and the electrically conductive layer. The gasket is positionable and/or compressible between first and second surfaces to thereby define an electrically conductive path and a thermally conductive path between the first and second surfaces.

Abstract: A tissue scaffold for use in a tendon and/or ligament is provided, which includes a weave formed by interlacing warp yarns and weft yarns, wherein the warp yarns include a plurality of fibers with an alternative shaped cross section structure, and the weave includes: a main body area with a bioactive component formed on the fiber surface, and a fixed area comprises the weft yarn having a bioceramic material. The tissue scaffold prepared in the present disclosure has the characteristics of stimulating the growth of tissues and inducing tissue repair, effectively improving the ability of tissue regeneration and bone healing, and is beneficial to the reconstruction of the tendon and/or ligament.

Abstract: A method includes forming a contact spacer on a sidewall of an inter-layer dielectric, wherein the contact spacer encircles a contact opening, forming a silicide region in the opening and on a source/drain region, depositing an adhesion layer extending into the contact opening, and performing a treatment process, so that the contact spacer is treated. The treatment process is selected from the group consisting of an oxidation process, a carbonation process, and combinations thereof. The method further includes depositing a metal barrier over the adhesion layer, depositing a metallic material to fill the contact opening, and performing a planarization process to remove excess portions of the metallic material over the inter-layer dielectric.

Abstract: The present disclosure provides a conductive polymer material. The conductive polymer material includes a conductive polymer having structural units derived from the following monomers: (a) a monomer of formula (I): ?and (b) a monomer having an ethylenically unsaturated group which has the following formula: wherein A, X, R1, R2, R6 to R9, q and w are described in the specification. The conductive polymer material of the present disclosure has high withstand voltage and high capacitance and can be used for the preparation of solid capacitors or hybrid capacitors. In addition, the conductive polymer material according to the present disclosure has high electrical conductivity and good water washing resistance and is thus useful for an antistatic coating or smart fabrics.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back by a wet etching process. After etching back the portion of the barrier layer, an underlying dielectric welding layer is exposed. A conductive material is formed along the barrier layer.

Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming a source/drain region over the fin adjacent to the gate structure; forming an interlayer dielectric (ILD) layer over the source/drain region around the gate structure; forming an opening in the ILD layer to expose the source/drain region; forming a silicide region and a barrier layer successively in the openings over the source/drain region, where the barrier layer includes silicon nitride; reducing a concentration of silicon nitride in a surface portion of the barrier layer exposed to the opening; after the reducing, forming a seed layer on the barrier layer; and forming an electrically conductive material on the seed layer to fill the opening.

Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.

Abstract: A method includes forming a dielectric layer over a conductive feature, and etching the dielectric layer to form an opening. The conductive feature is exposed through the opening. The method further includes forming a tungsten liner in the opening, wherein the tungsten liner contacts sidewalls of the dielectric layer, depositing a tungsten layer to fill the opening, and planarizing the tungsten layer. Portions of the tungsten layer and the tungsten liner in the opening form a contact plug.

Abstract: An apparatus, including: an oscillator configured to generate a clock signal; a clock signal synthesizer configured to generate a first clock signal, a second clock signal, and a third clock signal, wherein the first, second, and third clock signals are based on the clock signal; a baseband transmitter configured to generate a transmit baseband digital signal in response to the first clock signal; an ultra-wideband (UWB) pulse digital-to-analog converter (DAC) configured to generate a UWB pulse signal based on the transmit baseband digital signal in response to the second clock signal; and a frequency upconverter configured to frequency upconvert the UWB pulse signal to generate a transmit radio frequency (RF) signal based on the third clock signal.

Abstract: A human interface for a urinary relief system is disclosed herein. The human interface includes a body including a top, a bottom, a front, a back, a first side, and a second side, a fluid cavity defined by the bottom, the front, the back, the first side, and the second side, the fluid cavity open through an opening in the top of the body, and an outlet extending from the fluid cavity and through the bottom, the outlet located near the back and centered between the first side and the second side.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.

Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.

Abstract: A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.

Abstract: A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.