Abstract: A method for producing a deposit resistant fluid includes combining a base stock and one or more additives to form a blended fluid configured to resist forming deposits in an oxidizing environment. The base stock has a viscosity index of at least 80, and either a kinematic viscosity at 40° C. of at least 320 cSt or a kinematic viscosity at 100° C. of at least 14 cSt. The base stock includes greater than or equal to about 90 wt % saturates, less than or equal to about 10 wt % aromatics, and a sum of terminal/pendant propyl groups and terminal/pendant ethyl groups of at least 1.7 per 100 carbon atoms.

Abstract: Disclosed herein is a method for treating and/or preventing a lymphangiogenesis-associated disease in a subject, including administering to the subject a therapeutically effective amount of a dihydrolipoic acid (DHLA)-coated gold nanocluster about 0.1 to 10 nm in diameter. Also disclosed is a method for promoting lymphangiogenesis in a subject, including administering to the subject an effective amount of said DHLA-coated gold nanocluster.

Abstract: A semiconductor device package is disclosed. The semiconductor device package includes a carrier, a first electronic component disposed on the carrier and a support component disposed on the carrier. The semiconductor device package also includes a second electronic component disposed on the first electronic component and supported by the support component.

Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The ring resonator is over the substrate and overlaps with the transistor. The ring resonator includes a conductive loop and an impedance matching element. The conductive loop includes a loop portion having two first parts and a second part and two feeding lines. Each of the first parts of the loop portion is between the second part of the loop portion and one of the feeding lines, and a tunnel barrier of the transistor is closer to the second part than to the feeding lines. The impedance matching element is closer to the feeding lines than to the second part.

Abstract: A method for performing data access management of a memory device in predetermined communications architecture to enhance sudden power off recovery (SPOR) of page-group-based redundant array of independent disks (RAID) protection with aid of multi-table control using dummy flag and associated apparatus are provided. The method may include: after occurrence of a sudden power off (SPO) event, utilizing the memory controller to perform a SPOR procedure in response to the SPO event, for example, updating a temporary physical-to-logical (P2L) address mapping table corresponding to a first active block to carry the dummy flag in each P2L table entry of at least one P2L table entry corresponding to at least one set of damaged pages; and after performing the SPOR procedure in response to the SPO event, utilizing the memory controller to write subsequent data into at least one set of subsequent pages in the damaged page group.

Abstract: A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: The present disclosure discloses a media communication apparatus having built-in signal synchronization mechanism. A local clock generation circuit generates a reference clock signal and a media clock signal. A time calibration circuit performs time calibration process with an external apparatus to generate time calibration information to further calibrate the reference clock signal and the media clock signal accordingly to generate a calibrated reference clock signal and a calibrated media clock signal on a standard time domain. A media clock processing circuit generates a sampling signal according to the calibrated media clock signal. A signal processing circuit generates time related information according to the calibrated reference clock signal to process an input media signal according to the time related information and the sampling signal and generate an output media signal.

Abstract: A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.

Abstract: The present disclosure provides an electronic wearable device. The electronic wearable device includes a first module having a first contact and a second module having a second contact. The first contact is configured to keep electrical connection with the second contact in moving with respect to each other during a wearing period.

Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The ring resonator is over the substrate and overlaps with the transistor. The ring resonator includes a conductive loop and an impedance matching element. The conductive loop includes a loop portion having two first parts and a second part and two feeding lines. Each of the first parts of the loop portion is between the second part of the loop portion and one of the feeding lines, and a tunnel barrier of the transistor is closer to the second part than to the feeding lines. The impedance matching element is closer to the feeding lines than to the second part.

Abstract: An energy-saving prediction method for factory electricity consumption and an electronic apparatus are provided. The method includes the following steps. A reference electricity consumption amount in a unit period is predicted based on factory actual operation information in the unit period by using an electricity consumption prediction model. An actual electricity consumption amount in the unit period is acquired. The reference electricity consumption amount and the actual electricity consumption amount are displayed on an electricity consumption reference interface. A function is provided according to a first difference value between the reference electricity consumption amount and the actual electricity consumption amount.

Abstract: A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: A method for producing a deposit resistant fluid includes combining a base stock and one or more additives to form a blended fluid configured to resist forming deposits in an oxidizing environment. The base stock has a viscosity index of at least 80, and either a kinematic viscosity at 40° C. of at least 320 cSt or a kinematic viscosity at 100° C. of at least 14 cSt. The base stock includes greater than or equal to about 90 wt % saturates, less than or equal to about 10 wt % aromatics, and a sum of terminal/pendant propyl groups and terminal/pendant ethyl groups of at least 1.7 per 100 carbon atoms.

Abstract: A semiconductor device package is disclosed. The semiconductor device package includes a carrier, a first electronic component disposed on the carrier and a support component disposed on the carrier. The semiconductor device package also includes a second electronic component disposed on the first electronic component and supported by the support component.

Abstract: A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: A method for forming a chitin film is provided. The method includes the following steps. In a step (a), a chitin suspension is prepared by adding chitin to water. In a step (b), physical forces are provided to process the chitin suspension, so that a mean particle diameter of the chitin is reduced. In a step (c), the chitin suspension is applied to a target, and the chitin film is formed after the chitin suspension is dried.

Abstract: A method for producing a deposit resistant fluid includes combining a base stock and one or more additives to form a blended fluid configured to maintain fluidity in a low temperature environment and to resist forming deposits in an oxidizing environment. The base stock has a viscosity index of at least 80, and either a kinematic viscosity at 40° C. of at least 320 cSt or a kinematic viscosity at 100° C. of at least 14 cSt. The base stock includes greater than or equal to about 90 wt % saturates, less than or equal to about 10 wt % aromatics, and a sum of terminal/pendant propyl groups and terminal/pendant ethyl groups of at least 1.7 per 100 carbon atoms.

Abstract: A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.

Abstract: A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.

Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The ring resonator is over the substrate and includes a conductive loop and an impedance matching element. The conductive loop overlaps with the transistor. The impedance matching element is on the conductive loop and electrically isolated from the transistor.