Abstract: Disclosed are an apparatus and method for measuring a dimension. The method of measuring a dimension according to an aspect of the present invention includes photographing a target object and generating an image, normalizing the image of the target object, generating normalized estimated dimension information about the target object from the normalized image of the target object using a pre-trained dimension prediction model, and converting the normalized estimated dimension information of the target object into estimated dimension information of the target object.

Abstract: The present disclosure relates to a boron compound useful in an organic light-emitting diode and an organic light-emitting diode comprising same and, more particularly, to a boron compound represented by any one of [Chemical Formula A], wherein [Chemical Formula A] is as defined in the description.

Abstract: Disclosed herein is a method for generating a texture map of a 3D mesh includes encoding a texture map of a 3D mesh, quantizing the encoded texture map, decoding the quantized texture map, performing rendering using the decoded texture map, and updating the texture map of the 3D mesh based on the value of a loss function.

Abstract: The present disclosure provides an earphone including a sound production component and an ear hook which is configured to place the sound production component at a position near an ear canal but not blocking the ear canal. The sound production component and an auricle have a first projection and a second projection on a sagittal plane, respectively, and a centroid of the first projection has a first distance from a highest point of the second projection in a vertical axis direction. A ratio of the first distance to a height of the second projection in the vertical axis direction is in a range of 0.25-0.6, and a ratio of a distance from a center of a sound outlet provided on an inner side surface to a lower side surface of the sound production component to a short-axis dimension of the sound production component is in a range of 0.25-0.50.

Abstract: The present invention relates to a pharmaceutical composition, for treating glioblastoma, comprising a nucleic acid complex as an active ingredient and, more particularly, to a pharmaceutical composition, for preventing or treating glioblastoma, comprising a nucleic acid complex having complementarily bound: a bioactive peptide nucleic acid having a sequence binding to TGF-?2 gene; and a carrier peptide nucleic acid. The nucleic acid complex according to the present invention has excellent cell permeability and intracellular activity and can effectively inhibit the expression of TGF-?2 gene and the hypostatic gene thereof, and thus is useful in preventing or treating glioblastoma.

Abstract: A semiconductor memory device comprising a peripheral circuit structure and a cell structure stacked on the peripheral circuit structure, wherein the cell structure includes a cell substrate including a first face facing the peripheral circuit structure and a second face opposite the first face, a first mold stack including a plurality of first gate electrodes sequentially stacked on the first face, and a channel hole extending through the plurality of first gate electrodes. A channel structure includes a gate dielectric film, a semiconductor film, and a variable resistance film sequentially stacked in the channel hole, wherein the semiconductor film includes a sidewall portion intersecting the first face and the plurality of first gate electrodes, and a top plate portion extending from the sidewall portion in the cell substrate in a parallel manner to the first face.

Abstract: Disclosed are a metal thin film precursor composition, a method of forming a thin film using the metal thin film precursor composition, and a semiconductor substrate fabricated using the method. The metal thin film precursor composition includes a metal thin film precursor compound and a growth regulator including a predetermined terminal group and structure. In a thin film deposition process, by using the metal thin film precursor composition, side reactions may be suppressed and thin film growth rate may be controlled appropriately. Since process by-products in a thin film are removed, even when the thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity and resistivity characteristics of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the crystallinity of the thin film may be improved, thereby improving the electrical properties of the thin film.

Abstract: The present disclosure relates to an open earphone. The open earphone may include a sound production device and an ear hook including a first part and a second part connected in sequence. The first part may be hooked and arranged between an auricle and a head of a user. The second part may extend to a front lateral surface of the auricle and may be connected to the sound production device. The sound production device may be worn at a position that is near an ear canal without blocking an earhole of the user. The sound production device may be at least partially inserted into an auricular concha cavity of the user. An overlap ratio of a projection area of the sound production device on a sagittal plane to a projection area of the auricular concha cavity on the sagittal plane may be not less than 44.01%.

Abstract: A capacitor component includes a body including a dielectric layer and first and second internal electrode layers, and external electrodes disposed on the body and connected to the first and second internal electrode layers, respectively. The body includes an active portion in which the first and second internal electrode layers are alternately disposed with the dielectric layer interposed therebetween, a cover portion disposed on an upper portion and a lower portion of the active portion, and a side margin portion disposed on both sides of the active portion opposing each other. When a content of magnesium (Mg) included in the active portion is A1, a content of magnesium (Mg) included in the cover portion is C1, and a content of magnesium (Mg) included in the margin portion is M1, 0<A1<M1?C1 and A1/C1?0.60 are satisfied.

Abstract: The earphone includes a sound generation component including a transducer; at least a portion of the sound generation component extending into a concha cavity of a user; and an ear hook including a first portion and a second portion, the second portion being connected to the first portion, and being connected to the sound generation component to place the sound generation component at a position near an ear canal without blocking an opening of the ear canal. The sound generation component has a first projection on a sagittal plane, and the auricle has a second projection on the sagittal plane. A centroid of the first projection may have a first distance from a highest point of the second projection in a vertical axis direction. A ratio of the first distance to a height of the second projection in the vertical axis direction may be in a range of 0.35-0.6.

Abstract: A method of manufacturing a multilayer electronic component, the method includes, attaching a margin portion green sheet including a ceramic material, a photocuring agent, and a photoinitiator to at least one end surface of each of the plurality of cut ceramic green sheet stacked bodies in the third direction, an energy irradiation operation of irradiating, with energy, the margin portion green sheet to generate a photocuring polymerization reaction between the photocuring agent and the photoinitiator.

Abstract: An organic electroluminescence display device includes: a substrate; a first electrode including a first sub-electrode and a second sub-electrode spaced apart from each other and on the substrate; a first light emitting unit on the first electrode; a charge generation unit on the first light emitting unit; a second light emitting unit on the charge generation unit; and a second electrode on the second light emitting unit, wherein the first light emitting unit comprises a first light emitting layer correspondingly on the first sub-electrode; and a second light emitting layer correspondingly on the second sub-electrode, wherein the second light emitting unit comprises a third light emitting layer correspondingly on the first light emitting layer; and a fourth light emitting layer correspondingly on the second light emitting layer.

Abstract: A semiconductor package includes a package substrate, a plurality of semiconductor devices stacked on the package substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the package substrate and the plurality of semiconductor devices, and a molding resin at least partially surrounding the plurality of semiconductor devices and the plurality of underfill fillets. The plurality of underfill fillets include a plurality of protrusions that protrude from spaces between each of the plurality of semiconductor devices or between the package substrate and each of the plurality of semiconductor devices. At least two neighboring underfill fillet protrusions of the plurality of protrusions form one continuous structure without an interface therebetween.

Abstract: A compound including a first ligand LA having a structure of Formula I is disclosed. The compound is useful a an emitter dopants in OLEDs for enhancing the OLED performance.

Abstract: A transparent conductor according to an exemplary embodiment of the present invention includes a transparent substrate, and a transparent conductive pattern formed on the transparent substrate, and the transparent conductor includes a nanostructure on an upper surface of at least one of the transparent substrate and the transparent conductive pattern.

Abstract: The present application discloses a cell structure of a super flash comprising: a word line gate, a floating gate, a control gate, and an erase gate. The floating gate comprises a first TiN layer located on a side face of the control gate and a second polysilicon layer formed at the top of the first TiN layer. The second polysilicon layer is in electric contact with the first TiN layer. The erase gate is located at the top of the second polysilicon layer, and the erase gate and the floating gate are spaced from each other by a second inter-gate dielectric layer therebetween. During erasing, the top angle of the second polysilicon layer generates point discharge, thereby reducing an erasing voltage. The present application also discloses a method for manufacturing a super flash.

Abstract: A display device includes a first region, a second region adjacent to a side of the first region, and a third region adjacent to another side of the first region; a display panel in the first region, the second region and the third region; a window on and overlapping the display panel; and a bonding member between the display panel and the window and in the first region, the second region and the third region. The bonding member includes a first bonding part having a first elastic modulus and in the first region, a second bonding part having a second elastic modulus and in the second region, and a third bonding part having a third elastic modulus and in the third region. The first elastic modulus is greater than each of the second elastic modulus and the third elastic modulus.