Patents by Inventor An-Ju LIN
An-Ju LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10529895Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.Type: GrantFiled: December 12, 2017Date of Patent: January 7, 2020Assignee: EPISTAR CORPORATIONInventors: Tsun-Kai Ko, Schang-Jing Hon, Chien-Kai Chung, Hui-Chun Yeh, An-Ju Lin, Chien-Fu Shen, Chen Ou
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Publication number: 20180114880Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.Type: ApplicationFiled: December 12, 2017Publication date: April 26, 2018Inventors: Tsun-Kai KO, Schang-Jing HON, Chien-Kai CHUNG, Hui-Chun YEH, An-Ju LIN, Chien-Fu SHEN, Chen OU
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Patent number: 9876146Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in thType: GrantFiled: September 2, 2016Date of Patent: January 23, 2018Assignee: EPISTAR CORPORATIONInventors: Tsun-Kai Ko, Schang-Jing Hon, Chien-Kai Chung, Hui-Chun Yeh, An-Ju Lin, Chien-Fu Shen, Chen Ou
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Publication number: 20160372635Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in thType: ApplicationFiled: September 2, 2016Publication date: December 22, 2016Inventors: Tsun-Kai KO, Schang-Jing HON, Chien-Kai CHUNG, Hui-Chun YEH, An-Ju LIN, Chien-Fu SHEN, Chen OU
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Patent number: 9508902Abstract: An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.Type: GrantFiled: September 18, 2009Date of Patent: November 29, 2016Assignee: EPISTAR CORPORATIONInventors: Tsun-Kai Ko, Schang-Jing Hon, Chien-Kai Chung, Hui-Chun Yeh, An-Ju Lin, Chien-Fu Shen, Chen Ou
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Patent number: 9437780Abstract: An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.Type: GrantFiled: September 18, 2009Date of Patent: September 6, 2016Assignee: EPISTAR CORPORATIONInventors: Tsun-Kai Ko, Schang-Jing Hon, Chien-Kai Chung, Hui-Chen Yeh, An-Ju Lin, Chien-Fu Shen, Chen Ou
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Publication number: 20100052000Abstract: An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.Type: ApplicationFiled: September 18, 2009Publication date: March 4, 2010Applicant: EPISTAR CORPORATIONInventors: Tsun-Kai KO, Schang-Jing HON, Chien-Kai CHUNG, Hui-Chen YEH, An-Ju LIN, Chien-Fu SHEN, Crux OU