Abstract: The invention discloses a signal processing apparatus of a CW-radar sensing system, comprising of a transmitting unit, a transmitting antenna and a receiving device. The transmitting unit produces a first frequency conversion signal and a second frequency conversion signal which are transmitted by the transmitting antenna serially and alternatively. A receiving antenna respectively receives the echo signal of the first frequency conversion signal and the second frequency conversion signal, and a mixing-LPF (lowpass filtering) module mixes the echo signal with a first frequency conversion signal and a second frequency conversion signal which are produced by a local oscillator and carries out lowpass filtering for the signals as to obtain a beat frequency signal of the above signals.

Abstract: The invention discloses a signal processing apparatus of a CW-radar sensing system, comprising of a transmitting unit, a transmitting antenna and a receiving device. The transmitting unit produces a first frequency conversion signal and a second frequency conversion signal which are transmitted by the transmitting antenna serially and alternatively. A receiving antenna respectively receives the echo signal of the first frequency conversion signal and the second frequency conversion signal, and a mixing-LPF (lowpass filtering) module mixes the echo signal with a first frequency conversion signal and a second frequency conversion signal which are produced by a local oscillator and carries out lowpass filtering for the signals as to obtain a beat frequency signal of the above signals.

Abstract: A high electron mobility transistor is provided, which includes a substrate, a superlattice structure formed on the substrate, and a transistor epitaxial structure formed on the superlattice structure such that the superlattice structure is interposed between the substrate and the transistor epitaxial layer. As the high electron mobility transistor has the carbon-doped AlN/GaN superlattice structure between the substrate and the transistor epitaxial layer. Thus, the present invention can effectively reduce vertical leakage current, so as to improve the epitaxial quality and the breakdown voltage of the high electron mobility transistor.

Abstract: A high electron mobility transistor is provided, which includes a substrate, a superlattice structure formed on the substrate, and a transistor epitaxial structure formed on the superlattice structure such that the superlattice structure is interposed between the substrate and the transistor epitaxial layer. As the high electron mobility transistor has the carbon-doped AlN/GaN superlattice structure between the substrate and the transistor epitaxial layer. Thus, the present invention can effectively reduce vertical leakage current, so as to improve the epitaxial quality and the breakdown voltage of the high electron mobility transistor.

Abstract: A light emitting diode device is provided, which comprises a silicon-based substrate, a buffer layer, a super lattice structure layer, a nano-structure layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The buffer layer is formed on the silicon-based substrate, the super lattice structure layer is formed on the buffer layer, the nano-structure layer is formed on the super lattice structure layer, a first semiconductor layer is formed on the nano-structure layer, and the light emitting layer is formed between the first semiconductor layer and the second semiconductor layer. The super lattice layer and the nano-structure can release the stress within the light emitting diode device, and reduce the epitaxy defect, so that the internal quantum effect and the external quantum effect can be increased.

Abstract: A light emitting diode device is provided, which comprises a silicon-based substrate, a buffer layer, a super lattice structure layer, a nano-structure layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The buffer layer is formed on the silicon-based substrate, the super lattice structure layer is formed on the buffer layer, the nano-structure layer is formed on the super lattice structure layer, a first semiconductor layer is formed on the nano-structure layer, and the light emitting layer is formed between the first semiconductor layer and the second semiconductor layer. The super lattice layer and the nano-structure can release the stress within the light emitting diode device, and reduce the epitaxy defect, so that the internal quantum effect and the external quantum effect can be increased.