Abstract: A method includes forming a first semiconductor channel region and a second semiconductor channel region, with the second semiconductor channel region overlapping the first semiconductor channel region, forming a first gate dielectric on the first semiconductor channel region, and forming a second gate dielectric on the second semiconductor channel region. A dipole dopant is incorporated into a first one of the first gate dielectric and the second gate dielectric to a higher atomic percentage, and a second one of the first gate dielectric and the second gate dielectric has a lower atomic percentage of the dipole dopant. A gate electrode is formed on both of the first gate dielectric and the second gate dielectric. The gate electrode and the first gate dielectric form parts of a first transistor, and the gate electrode and the second gate dielectric form parts of a second transistor.

Abstract: The present invention provides a novel Bacillus amyloliquefaciens and a method for detoxifying zearalenone. The Bacillus amyloliquefaciens of the present invention shows high zearalenone-degrading activity, non-hemolytic and non-enterotoxin producing properties, and acidic and bile salt resistant. Moreover, B. amyloliquefaciens has the abilities of xylanase, carboxyl-methyl cellulase, amylase, and protease.

Abstract: A method for forming transistors of a semiconductor device includes forming a plurality of gate stacks on a semiconductor substrate; and forming a spacer oxide film on the semiconductor substrate having the plurality of gate stacks formed thereon using a single-type radical-assisted CVD apparatus. The method further includes oxidizing the surfaces of the plurality of gate stacks, after the formation of the gate stacks; forming LDD regions in the semiconductor substrate at both sides of the plurality of gate stacks; and sequentially forming a buffer oxide film and a spacer nitride film on the plurality of gate stacks.