Patents by Inventor An-Li Cheng

An-Li Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9029947
    Abstract: A field device and method of operating high voltage semiconductor device applied with the same are provided. The field device includes a first well having a second conductive type and second well having a first conductive type both formed in the substrate (having the first conductive type) and extending down from a surface of the substrate, the second well adjacent to one side of the first well and the substrate is at the other side of the first well; a first doping region having the first conductive type and formed in the second well, the first doping region spaced apart from the first well; a conductive line electrically connected to the first doping region and across the first well region; and a conductive body insulatively positioned between the conductive line and the first well, and the conductive body correspondingly across the first well region.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: May 12, 2015
    Assignee: Macronix International Co., Ltd.
    Inventors: An-Li Cheng, Miao-Chun Chung, Chih-Chia Hsu, Yin-Fu Huang
  • Publication number: 20150035583
    Abstract: A field device and method of operating high voltage semiconductor device applied with the same are provided. The field device includes a first well having a second conductive type and second well having a first conductive type both formed in the substrate (having the first conductive type) and extending down from a surface of the substrate, the second well adjacent to one side of the first well and the substrate is at the other side of the first well; a first doping region having the first conductive type and formed in the second well, the first doping region spaced apart from the first well; a conductive line electrically connected to the first doping region and across the first well region; and a conductive body insulatively positioned between the conductive line and the first well, and the conductive body correspondingly across the first well region.
    Type: Application
    Filed: October 21, 2014
    Publication date: February 5, 2015
    Inventors: An-Li Cheng, Miao-Chun Chung, Chih-Chia Hsu, Yin-Fu Huang
  • Patent number: 8896061
    Abstract: A field device and method of operating high voltage semiconductor device applied with the same are provided. The field device includes a first well having a second conductive type and second well having a first conductive type both formed in the substrate (having the first conductive type) and extending down from a surface of the substrate, the second well adjacent to one side of the first well and the substrate is at the other side of the first well; a first doping region having the first conductive type and formed in the second well, the first doping region spaced apart from the first well; a conductive line electrically connected to the first doping region and across the first well region; and a conductive body insulatively positioned between the conductive line and the first well, and the conductive body correspondingly across the first well region.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: November 25, 2014
    Assignee: Macronix International Co., Ltd.
    Inventors: An-Li Cheng, Miao-Chun Chung, Chih-Chia Hsu, Yin-Fu Huang
  • Publication number: 20140077866
    Abstract: A field device and method of operating high voltage semiconductor device applied with the same are provided. The field device includes a first well having a second conductive type and second well having a first conductive type both formed in the substrate (having the first conductive type) and extending down from a surface of the substrate, the second well adjacent to one side of the first well and the substrate is at the other side of the first well; a first doping region having the first conductive type and formed in the second well, the first doping region spaced apart from the first well; a conductive line electrically connected to the first doping region and across the first well region; and a conductive body insulatively positioned between the conductive line and the first well, and the conductive body correspondingly across the first well region.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: An-Li Cheng, Miao-Chun Chung, Chih-Chia Hsu, Yin-Fu Huang
  • Patent number: 8643072
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a bulk, a gate, a source, a drain and a bulk contact region. The gate is on the bulk. The source and the drain are in the bulk on opposing sides of the gate respectively. The bulk contact region is only in a region of the bulk adjacent to the source. The bulk contact region is electrically connected to the bulk.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: February 4, 2014
    Assignee: Macronix International Co., Ltd.
    Inventors: Miao-Chun Chung, An-Li Cheng, Yin-Fu Huang, Shih-Chin Lien, Shyi-Yuan Wu
  • Publication number: 20140015016
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a bulk, a gate, a source, a drain and a bulk contact region. The gate is on the bulk. The source and the drain are in the bulk on opposing sides of the gate respectively. The bulk contact region is only in a region of the bulk adjacent to the source. The bulk contact region is electrically connected to the bulk.
    Type: Application
    Filed: July 12, 2012
    Publication date: January 16, 2014
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Miao-Chun Chung, An-Li Cheng, Yin-Fu Huang, Shih-Chin Lien, Shyi-Yuan Wu