Abstract: A unit-dose dentifrice composition includes a soluble fibrous composition and a nonfibrous composition. The soluble fibrous composition includes web forming material and tin ion source. The nonfibrous composition includes abrasive. The abrasive and the tin ion source are in separate locations within the unit-dose dentifrice composition.

Abstract: A battery condition monitoring apparatus includes a measurer configured to measure a charging current which is an internal current of a converter and is charged into a sub-battery, a charging voltage of the converter, and an ambient temperature of a vehicle, an impedance calculator configured to an impedance of the sub-battery on basis of a voltage and a current each measured by the measurer, and a determiner configured to determine a condition of the sub-battery by using the ambient temperature of the vehicle and the impedance of the sub-battery.

Abstract: A circuit is provided and includes first to second switching units, a sensing unit, and first to second capacitive units. The first switching unit and the second switching unit are alternately turned on in response to, respectively, a first control signal and a second control signal that have different voltage levels. First terminals of the first and second switching units are coupled to each other. A sensing unit generates a sensing voltage, in response to light, at the first terminals of the first and second switching units. The first capacitive unit generates a first voltage, in response to the sensing voltage, at a second terminal of the first switching unit. The second capacitive unit generates a second voltage, in response to the generating the sensing voltage, at a second terminal of the second switching unit.

Abstract: A method of manufacturing quantum dots includes placing nickel powder having a certain particle size, a precursor material, and an organic solvent into a container, maintaining a pressure in the container at a certain value, and synthesizing quantum dots by stirring the nickel powder, the precursor material, and the organic solvent in the container.

Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer a titanium aluminide layer, and a middle layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and the middle layer is disposed between the titanium aluminide layer and the titanium nitride barrier layer. The middle layer is directly connected with the titanium aluminide layer and the titanium nitride barrier layer, and the middle layer includes titanium and nitrogen. A concentration of nitrogen in the middle layer is gradually decreased in a vertical direction towards an interface between the middle layer and the titanium aluminide layer.

Abstract: A light source for plant cultivation includes at least two light emitting devices supplying light to a plant. Each of the light emitting devices includes a first semiconductor layer doped with a first conductivity type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a second conductivity type dopant different from the first conductivity type dopant, and an active layer interposed between the first semiconductor layer and the second semiconductor layer. The light emitting devices emit light towards the plant under a different condition in terms of at least one of wavelength, radiation intensity, and emission timing to control the type and content of phytochemicals in the plant.

Abstract: The present invention provides a Streptomyces sp. SNC087 strain (KCCM12505P) that is isolated from seawater and produces staurosporine, a method for producing staurosporine using the same, a method for culturing the same, and a pure culture medium of the same.

Abstract: A touch display device is provided in this disclosure. The touch display device includes a substrate, a first conductive layer, a second conductive layer, a stacked structure, an inorganic light emitting unit, and a touch sensing circuit. The first conductive layer is disposed on the substrate. The first conductive layer includes a gate electrode. The second conductive layer is disposed on the first conductive layer. The second conductive layer includes a source electrode and a drain electrode. The stacked structure is disposed on the substrate. The stacked structure includes a conductive channel and a sensing electrode. The inorganic light emitting unit is disposed on the stacked structure. The inorganic light emitting unit is electrically connected with the drain electrode via the conductive channel. The touch sensing circuit is electrically connected with the sensing electrode.

Abstract: An electrode including a current collector; and an electrode active material layer disposed on at least one surface of the current collector is disclosed. The electrode active material layer includes a lower layer region facing the current collector, and an upper layer region facing the lower layer region and extended to the surface of the electrode active material layer. The lower layer region includes a first active material and a first non-rubbery binder and is free from a rubbery binder. The upper layer region includes a second active material, a second non-rubbery binder, and a rubbery binder. The rubbery binder is a hydrogenated nitrile butadiene rubber (H-NBR). Each of the first non-rubbery binder and the second non-rubbery binder includes a polyvinylidene fluoride (PVDF)-based polymer, and the weight ratio of the second non-rubbery binder to the rubbery binder in the upper layer region is 1:0.03-1:0.07.

Abstract: A method to form a plurality of inductors in a single process by placing multiple coils on a first magnetic sheet, and then stacking magnetic layers on the first magnetic sheet to encapsulate the coils so as to from a large magnetic body, and then cutting the large magnetic body into multiple inductors, wherein a terminal part of the coil disposed on the bottom surface of the magnetic body of the inductor is extended away from the axis of the coil and is entirely located at a same side of the axis of the coil.

Abstract: Vertical field-effect transistor (VFET) devices and methods of forming the same are provided. The methods may include forming a lower structure on a substrate. The lower structure may include first and second VFETs, a preliminary isolation structure between the first and second VFETs, and a gate liner on opposing sides of the preliminary isolation structure and between the preliminary isolation structure and the substrate. Each of the first and second VFETs may include a bottom source/drain region, a channel region and a top source/drain region sequentially stacked, and a gate structure on a side surface of the channel region. The preliminary isolation structure may include a sacrificial layer and a gap capping layer sequentially stacked. The methods may also include forming a top capping layer on the lower structure and then forming a cavity between the first and second VFETs by removing the sacrificial layer.

Abstract: Embodiments include methods performed by a wireless device for random access to a wireless communications network. Such methods include transmitting a random access preamble in a first uplink (UL) bandwidth part (BWP) of a carrier and selecting a first downlink (DL) BWP of the carrier based on an association between the first UL BWP and the first DL BWP. Such methods include monitoring the first DL BWP for a random access response from the wireless communication network to the transmitted random access preamble. Other embodiments include complementary methods for a base station configured to support random access by wireless devices, as well as wireless devices and base stations configured to perform such methods.

Abstract: An electronic device including a memory device with improved reliability is provided. The semiconductor device comprises a data pin configured to transmit a data signal, a command/address pin configured to transmit a command and an address, a command/address receiver connected to the command/address pin, and a computing unit connected to the command/address receiver, wherein the command/address receiver receives a first command and a first address from the outside through the command/address pin and generates a first instruction on the basis of the first command and the first address, and the computing unit receives the first instruction and performs computation based on the first instruction.

Abstract: According to the present invention, an image encoding apparatus comprises: a motion prediction unit which derives motion information on a current block in the form of the motion information including L0 motion information and L1 motion information; a motion compensation unit which performs a motion compensation for the current block on the basis of at least one of the L0 motion information and L1 motion information so as to generate a prediction block corresponding to the current block; and a restoration block generating unit which generates a restoration block corresponding to the current block based on the prediction block. According to the present invention, image encoding efficiency can be improved.

Abstract: In one example, a semiconductor device comprises a substrate having a top surface and a bottom surface, an electronic device on the bottom surface of the substrate, a leadframe on the bottom surface of the substrate, the leadframe comprising a paddle, wherein the paddle is coupled to the electronic device, and a lead electrically coupled to the electronic device. The semiconductor device further comprises a first protective material contacting the bottom surface of the substrate and a side surface of the electronic device.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a first wafer including a plurality of electronic integrated circuits (EICs), forming a second wafer including a plurality of photonic integrated circuits (PICs), bonding the first wafer to the second wafer to form a first stacked wafer. The bonding of the first wafer to the second wafer includes vertically aligning each of the plurality of the EICs with one of the plurality of the PICs.

Abstract: To eliminate accumulation of air while preventing a decrease in pump efficiency, a pump is provided. The pump includes a rotary shaft, an impeller that is attached to the rotary shaft and that rotates with rotation of the rotary shaft, a casing that surrounds the rotary shaft, a shaft sealing device that seals a gap between the casing and the rotary shaft, and a baffle plate part that is located between the impeller and the shaft sealing device and attached to a rotating body. The baffle plate part extends in a direction that is inclined or orthogonal with respect to a surface orthogonal to an axial direction of the rotary shaft.

Abstract: The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method includes depositing an interfacial layer in each gate trench, depositing a first ferroelectric layer over the interfacial layer, removing the first ferroelectric layer from the nFET structure, depositing a metal oxide layer in each gate trench, depositing a second ferroelectric layer over the metal oxide layer, removing the second ferroelectric layer from the pFET structure, and depositing a gate electrode in each gate trench.