Abstract: An optical coupling system and method are provided for coupling light from a single mode laser (SML) light source into an MMF that reduce back reflection of laser light into the SML light source and provide controlled launch conditions that allow the light to avoid defective areas in the MMF as the light travels in the MMF. The launch conditions are controlled to cause preselected spatial intensity distribution patterns to be launched into the MMF that result in the laser light avoiding defective areas in the MMF as the laser light passes through the MMF. The combination of all of these features allows greater link bandwidth and link length to be achieved with an MMF without increasing transceiver packaging complexity. In addition, because the preselected spatial intensity distributions allow the light to avoid particular areas in the fiber that are likely to contain defects, fiber manufacturers can focus less on reducing defects in those areas and focus more on optimization of performance parameters.

Abstract: A parallel optical communications device is provided that has a mounting core that functions as a mounting system for mounting core components of the parallel optical communications device. In addition, the mounting core functions as a heat dissipation system for the core components of the parallel optical communications device, and also protects the core components and other elements of the communications device from dust and damage that can be caused by handling and other factors. In addition to performing the aforementioned functions, the mounting core is configured to enable the parallel optical communications device to be made extremely small in size while also protecting signal integrity.

Abstract: A laser diode driver IC of a transmitter or transceiver is provided with circuitry for monitoring the forward voltage of the laser diode or laser diodes of the transmitter or transceiver to enable the health of the laser diode or diodes to be assessed in real-time.

Abstract: A parallel optical communications device is provided that has a mounting core that functions as a mounting system for mounting core components of the parallel optical communications device. In addition, the mounting core functions as a heat dissipation system for the core components of the parallel optical communications device, and also protects the core components and other elements of the communications device from dust and damage that can be caused by handling and other factors. In addition to performing the aforementioned functions, the mounting core is configured to enable the parallel optical communications device to be made extremely small in size while also protecting signal integrity.

Abstract: A laser diode driver IC of a transmitter or transceiver is provided with circuitry for monitoring the forward voltage of the laser diode or laser diodes of the transmitter or transceiver to enable the health of the laser diode or diodes to be assessed in real-time.

Abstract: Using lateral physical modulation, the optical properties of VCSELs can be stabilized and controlled by spatially varying the characteristics of the device material. This results in stabilization of the linewidth, the numerical aperture, the near and far field, as a function of bias and temperature. A VCSEL includes a substrate, an active region sandwiched between an upper and lower distributed Bragg reflector (DBRs), and electrical contacts. A light emission property e.g. the index of refraction, may be varied by patterning or texturing the surface of the substrate prior to growth of the epitaxial DBR layers or at least one layer of either the upper or lower DBRs, or by inserting a non-planar layer.

Abstract: A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure, forming an oxidation cavity partially through the VCSEL structure, oxidizing a layer in the VCSEL structure, forming a first passivation layer over a surface of the oxidation cavity, and forming a second passivation layer over the first passivation layer. An oxide VCSEL structure includes a bottom mirror region, an active region atop the bottom mirror region, a top mirror region atop the active region, an oxidation cavity partially through the top mirror region, a first passivation layer covering a surface of the oxidation cavity, and a second passivation layer covering the first passivation layer. In both the method and the structure, the first passivation layer can be made of silicon nitride (SiN) while the second passivation layer can be made of silicon oxynitride (SiON).

Abstract: A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure, forming an oxidation cavity partially through the VCSEL structure, oxidizing a layer in the VCSEL structure, forming a first passivation layer over a surface of the oxidation cavity, and forming a second passivation layer over the first passivation layer. An oxide VCSEL structure includes a bottom mirror region, an active region atop the bottom mirror region, a top mirror region atop the active region, an oxidation cavity partially through the top mirror region, a first passivation layer covering a surface of the oxidation cavity, and a second passivation layer covering the first passivation layer. In both the method and the structure, the first passivation layer can be made of silicon nitride (SiN) while the second passivation layer can be made of silicon oxynitride (SiON).