Abstract: A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the protective layer and the photoresist layer to actinic radiation. The protective layer and the photoresist layer are developed to form a pattern in the photoresist layer, and the protective layer is removed. The protective layer includes a polymer having pendant fluorocarbon groups and pendant acid leaving groups.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes exposing a portion of the resist layer. The resist layer includes an exposed region and an unexposed region. In the exposed region, the auxiliary reacts with the first linkers. The method also includes removing the unexposed region of the resist layer by using a developer to form a patterned resist layer. The developer includes a ketone-based solvent having a formula (a) or the ester-based solvent having a formula (b).

Abstract: A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?h<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<5, or a base having a pKa of 40>pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes exposing a portion of the resist layer. The resist layer includes an exposed region and an unexposed region. In the exposed region, the auxiliary reacts with the first linkers. The method also includes removing the unexposed region of the resist layer by using a developer to form a patterned resist layer. The developer includes a ketone-based solvent having a formula (a), wherein R1 is linear or branched C1-C5 alkyl, and R2 is linear or branched C3-C9 alkyl.

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

Abstract: A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

Abstract: A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure: The second ligands each have a following structure: represents the core group. L? represents a chemical that includes 0˜2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1˜6 carbon atoms saturated by H or F. L? represents a chemical that includes 1˜6 carbon atoms saturated by H. L?? represents a chemical that includes 1˜6 carbon atoms saturated by H or F. Linker represents a chemical that links L? and L?? together.

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate, and forming a first layer over the material layer. The method also includes forming a second layer over the first layer, and the second layer includes an auxiliary. The method further includes forming a third layer over the second layer, and the third layer includes an inorganic material, the inorganic material includes a plurality of metallic cores, and a plurality of first linkers bonded to the metallic cores. A topmost surface of the second layer is in direct contact with a bottommost surface of the third layer. The method includes exposing a portion of the second layer by performing an exposure process, and the auxiliary reacts with the first linkers during the exposure process.

Abstract: Semiconductor systems and methods are provided. In an embodiment, a method of film formation includes receiving a substrate, dispensing a priming material on the substrate, and applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material. The priming material includes water.

Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate, a hard mask layer formed over the bottom layer, a material layer formed over the hard mask layer, and a photoresist layer formed over the material layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, where the developing removes portions of the photoresist layer and the material layer in a single step without substantially removing portions of the hard mask layer, and etching the hard mask layer using the photoresist layer as an etch mask. The material layer may include acidic moieties and/or acid-generating molecules. The material layer may also include photo-sensitive moieties and crosslinking agents.

Abstract: A cleaning solution includes first solvent having Hansen solubility parameters 25>?d>13, 25>?p>3, and 30>?h>4; acid having acid dissociation constant, pKa, of ?11<pKa<4, or base having pKa of 40>pKa>9.5; and surfactant. Surfactant is one or more of ionic surfactant, polyethylene oxide and polypropylene oxide, non-ionic surfactant, and combinations. Ionic surfactant is selected from group consisting of R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and X includes polar functional groups selected from —OH, ?O, S P, P(O2), —C(?O)SH, —C(?O)OH, —C(?O)OR—, —O—; —N—, —C(?O)NH, —SO2OH, —SO2SH, —SOH, —SO2—, —CO—, —CN—, —SO—, —CON—, —NH—, —SO3NH—, SO2NH.

Abstract: A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an assist layer over a material layer. The assist layer includes a first polymer with a first polymer backbone, a floating group bonded to the first polymer backbone, and the floating group includes carbon fluoride (CxFy), and a second polymer. The method includes forming a resist layer over the assist layer, and the first polymer is closer to an interface between the assist layer and the resist layer than the second polymer.

Abstract: A method includes spin-coating a first metal-free layer over the substrate, depositing a metal-containing layer over the first metal-free layer, spin-coating a second metal-free layer over the first metal-containing layer, forming a photoresist layer over the second metal-free layer, the photoresist layer including a first metallic element, exposing the photoresist layer, and subsequently developing the photoresist layer to form a pattern. The metal-containing layer includes a second metallic element selected from zirconium, tin, lanthanum, or manganese, and the first metallic element is selected from zirconium, tin, cesium, barium, lanthanum, indium, silver, or cerium.

Abstract: The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary, and the inorganic material includes a plurality of metallic cores, and a plurality of first linkers bonded to the metallic cores. The method also includes exposing a portion of the resist layer by performing an exposure process, and the auxiliary reacts with the first linkers during the exposure process. The method further includes etching a portion of the resist layer to form a patterned resist layer and patterning the material layer by using the patterned resist layer as a mask. The method also includes removing the patterned resist layer.

Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a metal complex including a radical generator, an organic core, and an organic solvent. By way of example, the organic core includes at least one cross-linker site. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.