Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on a first sidewall of the MTJ, and a second spacer on a second sidewall of the MTJ. Preferably, the first spacer and the second spacer are asymmetric, the first spacer and the second spacer have different heights, and a top surface of the MTJ includes a reverse V-shape.

Abstract: The disclosure provides a liquid-cooling device and an electronic device. The liquid-cooling device includes an accommodation housing and a liquid-cooling assembly. The accommodation housing has an accommodation structure. The liquid-cooling assembly includes at least one liquid-cooling heat exchanger, a cold plate and a tubing. The at least one liquid-cooling heat exchanger is located in the accommodation structure. The cold plate is covered on the accommodation housing and covers the accommodation structure. The tubing is connected to the at least one liquid-cooling heat exchanger and penetrates through the cold plate.

Abstract: A display panel is provided, including a driving back plate, sub-pixels and micro-lens units; the micro-lens units are on a side of the sub-pixels away from the driving back plate; an orthographic projection of each micro-lens unit covers an orthographic projection of an opening of the corresponding sub-pixel; a pattern of each micro-lens unit is axisymmetric with respect to an axis in any cross section perpendicular to the driving back plate and passing through a center of the orthographic projection of the micro-lens unit; the axis is a straight line passing through the center and perpendicular to the driving back plate; in the cross section, a distance from any point on a side of the micro-lens unit away from the driving back plate to the center is D, a length of a side of the micro-lens unit close to the driving back plate is 2R, and 0.9?D/R?1.0.

Abstract: A Schottky diode includes a substrate with an epitaxy layer on which a cathode region and an anode region are defined. A cathode structure and an anode structure are formed in the cathode region and the anode region respectively and horizontally separated by a distance. The anode structure includes a plurality of p-type doped regions diffused from the epitaxy layer toward the substrate, with an interval is formed between adjacent two p-type doped regions. A backside metal film and a backside protection layer are sequentially formed on a back surface of the substrate. Since the manufacturing of the Schottky diode does not involve wire bonding and molding processes, the overall thickness of the Schottky diode is reduced and heat dissipation is improved. With the backside metal film on the back side of the substrate, an equivalent resistance and a forward voltage of the Schottky diode can be reduced.

Abstract: Method for preventing or reducing low speed pre-ignition events in a spark-ignited internal combustion engine is provided. The method includes supplying to the engine a fuel composition comprising a primary additive having a structure given by or a salt thereof. R1 and R2 are independently H, C1-C20 hydrocarbyl group, carboxyl group, ester, amide, ketone, ether, or hydroxyl group. R3 and R4 are independently H, C1-C20 hydrocarbyl group, carboxyl group, ester, amide, ketone, ether, amino, or hydroxyl group or wherein R3 and R4 are part of a cyclic group. R5 is C1-C100 hydrocarbyl group, carboxyl group, ether, or hydroxyl group. Lastly, p is 0 to 2, n is 1 to 5, m is 0 to 2, and p+n+m is less than 6.

Abstract: A deep trench resistor structure and methods of forming the same are described. The structure includes a first trench located in a first dielectric material, a first layer disposed over the first dielectric material, a second layer disposed on the first layer, a second dielectric material disposed over the second layer, and a tunable device in contact with the first layer. The tunable device includes a semiconductor-containing layer in contact with the first layer, a dielectric layer disposed on the semiconductor-containing layer, and a metal-containing layer disposed on the dielectric layer.

Abstract: A semiconductor device includes a channel portion disposed on and spaced apart from a substrate, a gate dielectric which includes an upper dielectric region disposed on the channel portion, a first inner gate structure disposed between the substrate and the upper dielectric region, and an outer gate structure including an outer work-function portion and a cap portion. The outer work-function portion covers the upper dielectric region and the first inner gate structure. The cap portion covers the outer work-function portion in a way that the cap portion is separated from the first inner gate structure. The first inner gate structure includes a first work-function material and a conductive material that is different from the first work-function material. The outer work-function portion includes a second work-function material that is different from the conductive material.

Abstract: A gas-liquid mixer may include a connector, a main body, a mixing base, and a locating ring. The connector has a water inlet and a water outlet, and a first flow channel and a second flow channel are formed separately in the connector. The main body comprises a first tube body and a second tube body at one end, and a housing axially is formed at the other end thereof. At least a locating tube is formed inside the housing, and the inner tube portion of the locating tube penetrates through the bottom of the housing. The mixing base has an air duct formed at the center thereof, and a closed end is formed at one end of the air duct, and at least one horizontal through space formed corresponding to the locating tube in both quantity and position is positioned at the outer side of air duct.

Abstract: A memory device includes a stack structure, a first stop layer, a dielectric layer, at least one separation wall and a conductive plug. The stacked structure is located over a substrate. The stacked structure has an opening exposing a stepped structure of the stacked structure. The first stop layer covers the stepped structure and at least at least one portion of sidewalls of the opening. The dielectric layer fills the opening and covers the first stop layer. The separation wall extends through the dielectric layer and the first stop layer in the opening. The conductive plug extends through the dielectric layer and the first stop layer, and is electrically connected to the stepped structure. The memory device may be a 3D NAND flash memory with high capacity and high performance.

Abstract: Disclosed herein are novel solid forms of FXR agonists. The disclosure also relates to pharmaceutical compositions containing one or more of the solid forms disclosed herein, as well as methods of using the solid forms in the treatment of conditions mediated by FXR. The disclosure also relates to methods for obtaining such solid forms.

Abstract: Disclosed herein are methods of preventing or treating ALS by use of a modified EKLF polypeptide, a modified nucleic acid encoding the modified EKLF polypeptide, or modified bone marrow cells comprising the modified nucleic acid. According to embodiments of the present disclosure, the modified EKLF polypeptide comprises an amino acid modification that confers reduced sumoylation in a wild-type EKLF polypeptide.

Abstract: A light emitting diode package structure and a method for manufacturing the same are provided. The LED package structure includes a substrate having a first and a second surface opposite to each other, a conductive structure including a first and a second conductive structure electrically connected with each other, a first gold layer disposed on the first conductive structure, a second gold layer disposed on the second conductive structure, an LED chip disposed on the first gold layer, and a package layer disposed on the first surface and encapsulating the first conductive structure, the first gold layer, and the LED chip. The first conductive structure is disposed on the first surface. The second conductive structure is disposed on the second surface. A thickness of the first gold layer is greater than 1 ?m. The second conductive structure is completely covered by the second gold layer.

Abstract: Disclosed is a delivery device, kit, system, method, etc. for localized fusion of leaflets of a tissue valve, for example, a native heart valve, using an adhesive. The delivery device can have one or more capture features for capturing separate leaflets, for example, the anterior and posterior mitral leaflets. An applicator can be configured to apply a biocompatible adhesive between the captured leaflets, and one or more curing elements can be configured to cure the applied biocompatible adhesive. The kit can have the aforementioned delivery device, and the biocompatible adhesive used therewith. The method can include positioning the aforementioned delivery device adjacent the anterior and posterior mitral leaflets, capturing the mitral leaflets between the paddles of the delivery device, applying a biocompatible adhesive between the captured mitral leaflets via the applicator, and curing the applied biocompatible adhesive via the energy elements to locally fuse the mitral leaflets.

Abstract: There is provided a wearable device including at least one light source, a light sensor and a processor. The processor generates a peak interval plot according to one of at least two light detection signals detected by the light sensor when the at least one light source emits light, and generates an oxygen saturation plot according to two of the one of at least two light detection signals detected by the light sensor when the at least one emits light. The processor further determines an Apnea Hypopnea Index (AHI) score according to the peak interval plot, determines an Oxygen Desaturation Index (ODI) score according to the oxygen saturation plot and fits an obstructive sleep apnea level index corresponding to the AHI score and the ODI score.

Abstract: A semiconductor photonics device includes a plurality of grating couplers, each configured to couple a particular wavelength (or wavelength range) of an optical signal to a waveguide of the semiconductor photonics device. In some implementations, various implementations of optical signal splitters or filters described herein enable respective wavelengths (or respective wavelength ranges) to be passed to each of the grating couplers (while filtering out other wavelengths or other wavelength ranges), thereby enabling the grating couplers to each handle a respective wavelength (or respective wavelength range). This enables multiple wavelengths (or multiple wavelength ranges) to be distributed across multiple grating couplers, which may increase the bandwidth of the semiconductor photonics device relative to a semiconductor photonics device that includes only a single grating coupler.

Abstract: A suction force adjustment method is provided. An optical detection unit is disposed on a suction path of a suction pipe to detect an object flowing through the suction pipe. Physical features of the object are determined according to a sensing result of the optical detection unit. A suction force of a suction unit is regulated based on the physical features of the object.

Abstract: An electronic device and a manufacturing method are provided. The electronic device includes a first semiconductor chip, a second semiconductor chip and a third semiconductor chip. The second semiconductor chip is stacked on the first semiconductor chip, and is electrically connected to the first semiconductor chip by hybrid bonding. The third semiconductor chip is stacked on the second semiconductor chip, and is electrically connected to the second semiconductor chip through a plurality of bumps.

Abstract: A waveguide plate includes a substrate and at least two metasurfaces. The at least two metasurfaces are disposed on the substrate, wherein each of the metasurfaces includes at least two metastructure arrays, and the at least two metastructure arrays are linearly arranged. Each of the metastructure arrays includes at least two metastructure groups, and each of the metastructure groups includes at least two metastructures.

Abstract: A memory control method, a memory storage device and a memory control circuit unit are disclosed. The method includes: detecting a state of the memory storage device; and adjusting an operation mode of the memory storage device according to the state of the memory storage device, wherein the operation mode includes a first operation mode and a second operation mode, and a first waiting time before the memory storage device entering a power saving mode in the first operation mode is longer than a second waiting time before the memory storage device entering the power saving mode in the second operation mode.

Abstract: A power state control method and a data storage system are disclosed. The method includes: establishing a connection between a host system and a storage device; detecting a data access performance of the storage device through the connection; and instructing the storage device to operate at one of a plurality of power states of a normal work state according to the data access performance.