Patents by Inventor An-Shih Shih

An-Shih Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10629734
    Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: April 21, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kai-Lin Lee, Zhi-Cheng Lee, Wei-Jen Chen, Ting-Hsuan Kang, Ren-Yu He, Hung-Wen Huang, Chi-Hsiao Chen, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh
  • Publication number: 20200051858
    Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
    Type: Application
    Filed: October 16, 2019
    Publication date: February 13, 2020
    Inventors: Pin-Wen Chen, Chia-Han Lai, Chih-Wei Chang, Mei-Hui Fu, Ming-Hsing Tsai, Wei-Jung Lin, Yu Shih Shih Wang, Ya-Yi Cheng, I-Li Chen
  • Publication number: 20190172949
    Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.
    Type: Application
    Filed: January 18, 2019
    Publication date: June 6, 2019
    Inventors: Kai-Lin Lee, Zhi-Cheng Lee, Wei-Jen Chen, Ting-Hsuan Kang, Ren-Yu He, Hung-Wen Huang, Chi-Hsiao Chen, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh
  • Patent number: 10229995
    Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: March 12, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kai-Lin Lee, Zhi-Cheng Lee, Wei-Jen Chen, Ting-Hsuan Kang, Ren-Yu He, Hung-Wen Huang, Chi-Hsiao Chen, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh
  • Publication number: 20190027602
    Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.
    Type: Application
    Filed: August 4, 2017
    Publication date: January 24, 2019
    Inventors: Kai-Lin Lee, Zhi-Cheng Lee, Wei-Jen Chen, Ting-Hsuan Kang, Ren-Yu He, Hung-Wen Huang, Chi-Hsiao Chen, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh
  • Publication number: 20180358453
    Abstract: The present invention provides a method of making a tunneling effect transistor (TFET), the method includes: a substrate is provided, having a fin structure disposed thereon, the fin structure includes a first conductive type, a dielectric layer is then formed on the substrate and on the fin structure, a gate trench is formed in the dielectric layer, and a first work function metal layer is formed in the gate trench, the first work function metal layer defines at least a left portion, a right portion and a central portion, an etching process is performed to remove the central portion of the first work function metal layer, and to form a recess between the left portion and the right portion of the first work function metal layer, afterwards, a second work function metal layer is formed and filled in the recess.
    Type: Application
    Filed: July 6, 2017
    Publication date: December 13, 2018
    Inventors: Hung-Wen Huang, Kai-Lin Lee, Ren-Yu He, Chi-Hsiao Chen, Ting-Hsuan Kang, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh
  • Publication number: 20150276278
    Abstract: The present invention relates to a split type cold and warm air conditioner for solving problems of insufficient performances and inconvenience in use. The split type cold and warm air conditioner includes an air conditioning system having an outdoor unit and an indoor unit. The outdoor unit includes a first heat exchanger, a second heat exchanger, a first fan, a compressor, an accumulator and a capillary tube. The indoor unit includes a third heat exchanger, a fourth heat exchanger and a second fan. A first refrigerant circulation loop and a second refrigerant circulation loop can be constituted by using pipelines and solenoid valves to connect the above-mentioned components. The invention provides both high performances for cold and warm air functions.
    Type: Application
    Filed: March 25, 2014
    Publication date: October 1, 2015
    Applicant: Kun Shan University
    Inventors: SHIH-SHIH KU, KING-LEUNG WONG, WEN-CHI HUANG
  • Publication number: 20070215317
    Abstract: A movable multi-functional air-conditioner equipped with wheels for high mobility is disclosed having a front chamber with an air inlet and an air outlet, an evaporator and a fan mounted in the front chamber, a rear chamber with an air inlet and an air outlet, a heater and a condenser mounted in the rear chamber, a front valve mounted in the air inlet of the front chamber, a rear valve mounted in the air inlet of the rear chamber, and an intermediate valve for controlling the air passage between the front chamber and the rear chamber so that the user to select hot mode, cold mode, dehumidifying mode, or simultaneous dehumidifying and drying mode by opening/closing the front valve, the rear valve, and the intermediate valve.
    Type: Application
    Filed: December 16, 2006
    Publication date: September 20, 2007
    Inventors: King-Leung Wong, Tsung-Lieh Hsien, Shih-Shih Ku, Huann-Ming Chou