Abstract: A touch sensing method and a portable electronic apparatus are disclosed in this invention. The portable electronic apparatus includes a display module, a touch module and a processing unit. The display module is used for displaying a user interface. The user interface includes a plurality of interface layers. Each of the interface layers has a layer depth index respectively. The touch module is used for sensing a touch input. The processing unit is used for mapping the touch input to one of the interface layers according to the touch input and the layer depth indices of the interface layers, so as to select or execute an application function on the one of the interface layers.

Abstract: The invention discloses an image processing method and an imager processing apparatus using the same. The method includes the following steps: receiving an training image; finding a minimum difference among the differences; determining whether the minimum difference is larger than a first threshold; if no, generating a first output value according to the first pixel, the background candidates and a plurality of weightings corresponding to the background candidates; updating a first background candidate corresponding to the minimum difference; updating a first weighting related to the first background candidate; if yes, adding the first pixel as a new background candidate to the background candidates and adding a new weighting corresponding to the new background candidate to the weightings; and detecting whether a moving object existing in an incoming image according to the background candidates and the weightings.

Abstract: A fanout line structure of an array substrate includes first fanout lines arranged on a fanout area of the array substrate, and second fanout lines arranged on the fanout area of the array substrate. A second conducting film is arranged at a bottom of the second fanout line, a second capacitor is formed between the second conducting film and a first conducting film of the second fanout line, the second capacitor is used to reduce an impedance difference between the fanout lines. Capacitance value of the second capacitor is dependent on an overlapping area between the second conducting film and the first conducting film.

Abstract: Techniques to perform root volume encryption in a para-virtualized virtual machine are described. A disk layout supports the root volume encryption, set key flow, and normal boot flow of the para-virtualized virtual machine. An implementation for performing encryption for a cloud-based service is disclosed.

Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.

Abstract: A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate, a first well, a first heavily doping region, a field oxide, a first dielectric layer, and a conductive layer. The first well is disposed on the substrate, and the first heavily doping region is disposed in the first well. The field oxide is disposed on the first well and adjacent to the first heavily doping region. The first dielectric layer is disposed on the field oxide and covering the field oxide. The conductive layer is disposed on the first dielectric layer. The first well and the first heavily doping region have a first type doping.

Abstract: In various embodiments, actuation of a drug-delivery pump is controlled based on a change in a condition of the pump.

Abstract: A stereophonic device for a bed disposed adjacent to at least a wave reflecting object is provided. The bed has an upper side and a lower side. The stereophonic device includes a loudspeaker disposed on the lower side of the bed. The loudspeaker is adapted to generate direct sound waves radially propagating therefrom. A part of the direct sound waves propagate through the bed toward the upper side of the bed, and another part of the direct sound waves propagate toward the wave reflecting object, reflected by the wave reflecting object and becoming a reflected sound waves. The reflected sound waves then propagate toward the upper side of the bed and demonstrate stereophonic sound along with the direct sound waves propagating theretoward.

Abstract: An audio system of a vehicle includes a mainframe, a panel computer, and a power converting circuit. The mainframe includes a power signal output terminal. The power converting circuit includes a charging unit, a switch unit, and a battery unit. When the power signal output terminal is electrically connected to the power converting circuit, the power signal output terminal outputs a first DC voltage to the power converting circuit, the power converting circuit converts the first DC voltage to a second DC voltage, which is provided to the panel computer, and the first DC voltage charges the battery unit via the charging unit and the switch unit. When the power signal output terminal and the power converting circuit are disconnected, the battery unit outputs the first DC voltage, and the power converting circuit converts the first DC voltage into the second DC voltage, which is provided to the panel computer.

Abstract: A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. A polysilicon layer is disposed on the exposed portion of the second semiconductor material and a portion of the first oxide layer. A first conductive layer is disposed on the polysilicon layer. A second conductive layer is disposed on a surface of the first semiconductor material opposing a surface of the first semiconductor material in contact with the second semiconductor material.

Abstract: A method of electroplating and depositing metal includes: providing an insulation substrate formed with conductive through holes; forming a first conductive layer on a first surface of the insulation substrate and forming a resist layer on a first portion of the first conductive layer, leaving a second portion of the first conductive layer uncovered by the resist layer as a to-be-plated area; disposing the insulation substrate in a first electroplating solution and depositing a first metal layer on the to-be-plated area; removing the resist layer and the portion of the first conductive layer; forming a second conductive layer on a second surface of the insulation substrate; forming a mask layer on the second conductive layer; disposing the insulation substrate in a second electroplating solution and depositing a second metal layer on the first metal layer of the to-be-plated area; and removing the mask layer and the second conductive layer.

Abstract: An imaging optical lens assembly includes an aperture stop and an optical assembly, the optical assembly includes, in order from the object side to the image side: a first lens element with a positive refractive power; a second lens element with a refractive power; a third lens element with a refractive power; a fourth lens element with a refractive power; a fifth lens element with a negative refractive power having an image-side surface being convex near an optical axis; wherein the image-side surface of the fifth lens element is formed with at least two inflection points, including a first inflection point and a second inflection point further away from the optical axis, a vertical distance from the first inflection point to the optical axis is Y_inf1, a vertical distance from the second inflection point to the optical axis is Y_inf2, satisfying: 1.7<Y_inf2/Y_inf1<2.1.

Abstract: A FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower fin portion comprising a first semiconductor material having a first lattice constant; an upper fin portion comprising a second semiconductor material having a second lattice constant greater than the first lattice constant; a middle fin portion comprising a third semiconductor material having a third lattice constant between the first lattice constant and the second lattice constant; and a passivation structure surrounding the fin structure comprising a lower passivation portion surrounding the lower fin portion comprising a first oxynitride of the first semiconductor material; an upper passivation portion surrounding the upper fin portion comprising a second oxynitride of the second semiconductor material; and a middle passivation portion surrounding the middle fin portion comprising a third oxynitride of the third semiconductor material.

Abstract: A method includes forming a selection gate and a control gate for a flash memory cell in a memory device region. The selection gate and the control gate are over a semiconductor substrate. A protection layer is formed to cover the selection gate and the control gate. Stacked layers are formed in a logic device region, wherein the stacked layers extend to overlap the selection gate and the control gate. The stacked layers are patterned to form a gate stack for a logic device in the logic device region. After the patterning, an etching step is performed to etch a residue of the stacked layers in a boundary region of the memory device region. After the etching step, the protection layer is removed from the memory device region. Source and drain regions are formed for each of the flash memory cell and the logic device.

Abstract: In one aspect of the invention, a transmission device for a photosensitive drum having a drum axis, which is adapted for engagement with a drive member of an electronic image forming apparatus, comprises a flange detachably attachable to the photosensitive drum coaxially to the drum axis, the flange having a receiving hole; and a transmission unit disposed to the flange coaxially to the drum axis. The transmission unit includes a shaft disposed in the receiving hole of the flange and being rotatable about the drum axis relative to the flange and movable along the drum axis relative to the flange; and an engagement structure being coaxial with the shaft and defining a receiving space for receiving the drive member.

Abstract: Novel processes for the preparation of a compound of Formula I-2 substantially free of the 5,6-trans isomer: wherein R2, R3 and R4 are as defined in the specification are provided. Novel intermediates for the preparations of isomer free Prostaglandins and derivatives thereof are also provided.

Abstract: A fuel cell power generating system has a fuel cell module which can generate electricity when oxygen and hydrogen are supplied to the fuel cell module and have a reaction therein. A cooling subsystem provides coolant to flow through the fuel cell module to take heat away therefrom. Heat in the coolant is used to heat at least one of fluid for heating and humidifying air before the air enters the fuel cell module and fluid for heating and humidifying the hydrogen before the hydrogen enters the fuel cell module.

Abstract: A display may have an active area surrounded by an inactive border area. The display may be a liquid crystal display having a liquid crystal layer sandwiched between a color filter layer and a thin-film transistor layer. An upper polarizer may have a polarized central region that overlaps the active area of the display. The upper polarizer may also have an unpolarized portion in the inactive border area overlapping the border structures. The border structures may include colored material such as a white layer on the inner surface of the thin-film transistor layer. Binary information may be embedded into an array of programmable resonant circuits. The binary information may be a display identifier or other information associated with a display. The programmable resonant circuits may be tank circuits with adjustable capacitors, fuses, or other programmable components.

Abstract: A pixel driving circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, an organic light emitting diode, and a capacitor. The second transistor is electrically connected between a first end and a gate end of the first transistor. The third transistor is electrically connected between the first end of the first transistor and a first supply voltage source. The fourth transistor is electrically connected between a second end of the first transistor and a data input end. The fifth transistor is electrically connected to the second end of the first transistor. The organic light emitting diode is electrically connected between the fifth transistor and a second supply voltage source. The capacitor is electrically connected to the gate end of the first transistor.

Abstract: A virtualization platform can discover capabilities of data devices connected in a virtual infrastructure. The virtualization platform allows a user (e.g., system administrator) to specify a policy profile for a virtual machine in terms of performance and data handling parameters. The virtualization platform can provision a virtual machine comprising data devices having a combined capability that matches the policy profile. Enforcement of a policy profile can be made when I/O is performed by a virtual machine.