Abstract: A method of fabricating a variable diameter fiber includes providing a fiber optic cable comprising a cladding region, a fiber core, and a plurality of sacrificial regions disposed in the cladding region and focusing a laser beam at a series of predetermined locations inside the fiber optic cable. The method also includes creating a series of damage sites associated with the series of predetermined locations, wherein the series of damage sites define a variable diameter profile and a latticework in the cladding region of the fiber optic cable. The method further includes exposing the fiber optic cable to an etchant solution, preferentially etching the series of damage sites, and separating peripheral portions of the fiber optic cable to release the variable diameter fiber.

Abstract: A method of fabricating a variable diameter fiber includes providing a fiber optic cable comprising a cladding region, a fiber core, and a plurality of sacrificial regions disposed in the cladding region and focusing a laser beam at a series of predetermined locations inside the fiber optic cable. The method also includes creating a series of damage sites associated with the series of predetermined locations, wherein the series of damage sites define a variable diameter profile and a latticework in the cladding region of the fiber optic cable. The method further includes exposing the fiber optic cable to an etchant solution, preferentially etching the series of damage sites, and separating peripheral portions of the fiber optic cable to release the variable diameter fiber.

Abstract: A method of fabricating a variable diameter fiber includes providing a fiber optic cable, focusing a laser beam at a predetermined location inside the fiber optic cable, and creating a damage site at the predetermined location. The method also includes focusing the laser beam at a series of additional predetermined locations inside the fiber optic cable and creating a plurality of additional damage sites at the additional predetermined locations. The damage site and the additional damage sites define a variable diameter profile. The method further includes exposing the fiber optic cable to an etchant solution, preferentially etching the damage site and the plurality of additional damage sites, and separating a portion of the fiber optic cable to release the variable diameter fiber.

Abstract: A method of fabricating a variable diameter fiber includes providing a fiber optic cable, focusing a laser beam at a predetermined location inside the fiber optic cable, and creating a damage site at the predetermined location. The method also includes focusing the laser beam at a series of additional predetermined locations inside the fiber optic cable and creating a plurality of additional damage sites at the additional predetermined locations. The damage site and the additional damage sites define a variable diameter profile. The method further includes exposing the fiber optic cable to an etchant solution, preferentially etching the damage site and the plurality of additional damage sites, and separating a portion of the fiber optic cable to release the variable diameter fiber.

Abstract: Multiple-exposure fine-line interferometric lithography, combined with conventional optical lithography, is used in a sequence of steps to define arrays of complex, nm-scale structures in a photoresist layer. Nonlinearities in the develop, mask etch, and Si etch processes are used to modify the characteristics and further reduce the scale of the structures. Local curvature dependent oxidation provides an additional flexibility. Electrical contact to the quantum structures is achieved. Uniform arrays of Si structures, including quantum wires and quantum dots, are produced that have structure dimensions on the scale of electronic wave functions. Applications include enhanced optical interactions with quantum structured Si, including optical emission and lasing and novel electronic devices based on the fundamentally altered electronic properties of these materials. All of the process sequences involve parallel processing steps to make large fields of these quantum structures.

Abstract: In microelectronic processing, the method of producing complex, two-dimensional patterns on a photosensitive layer with dimensions in the extreme submicron range. A photosensitive layer is first exposed to two beams of coherent radiation to form an image of a first interference pattern on the surface of the layer. The layer is subsequently exposed to one or more interference pattern(s) that differ from the first interference pattern in some way, such as by varying the incident angle of the beams, the optical intensity, the periodicity, rotational orientation, translational position, by using complex amplitude or phase masks in one or both of the coherent beams, or a combination of the above. Desired regions of the complex pattern thus produced are isolated with a further exposure of the photosensitive layer using any conventional lithography.

Abstract: In microelectronic processing, the method of producing complex, two-dimensional patterns on a photosensitive layer with dimensions in the extreme submicron range. A photosensitive layer is first exposed to two beams of coherent radiation to form an image of a first interference pattern on the surface of the layer. The layer is subsequently exposed to one or more interference pattern(s) that differ from the first interference pattern in some way, such as by varying the incident angle of the beams, the optical intensity, the periodicity, rotational orientation, translational position, by using complex amplitude or phase masks in one or both of the coherent beams, or a combination of the above. Desired regions of the complex pattern thus produced are isolated with a further exposure of the photosensitive layer using any conventional lithography.

Abstract: In microelectronic processing, the method of producing complex, two-dimensional patterns on a photosensitive layer with dimensions in the extreme submicron range. A photosensitive layer is first exposed to two beams of coherent radiation to form an image of a first interference pattern on the surface of the layer. The layer is subsequently exposed to one or more interference pattern(s) that differ from the first interference pattern in some way, such as by varying the incident angle of the beams, the optical intensity, the periodicity, rotational orientation, translational position, by using complex amplitude or phase masks in one or both of the coherent beams, or a combination of the above. Desired regions of the complex pattern thus produced are isolated with a further exposure of the photosensitive layer using any conventional lithography.