Patents by Inventor An Trinh

An Trinh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240138272
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure over a substrate. A data storage structure overlies the first conductive structure. The data storage structure comprises a first dielectric layer on the first conductive structure and a second dielectric layer on the first dielectric layer. The first dielectric layer comprises a dielectric material and a first dopant having a concentration that changes from a top surface of the first dielectric layer in a direction towards the first conductive structure. A second conductive structure overlies the data storage structure.
    Type: Application
    Filed: January 3, 2024
    Publication date: April 25, 2024
    Inventors: Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang, Bi-Shen Lee
  • Patent number: 11967611
    Abstract: A multilayer structure, a capacitor structure and an electronic device are provided. The multilayer structure includes a first dielectric layer, a second dielectric layer and an intermediate dielectric layer. The intermediate dielectric layer is disposed between the first dielectric layer and the second dielectric layer. A material of the intermediate dielectric layer is represented by a formula of AxB1-xO, wherein A includes hafnium (Hf), zirconium (Zr), lanthanum (La) or tantalum (Ta), B includes lanthanum (La), aluminum (Al) or tantalum (Ta), A is different from B, O is oxygen, and x is a number less than 1 and greater than 0.
    Type: Grant
    Filed: May 30, 2022
    Date of Patent: April 23, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hai-Dang Trinh, Yi Yang Wei, Fa-Shen Jiang, Bi-Shen Lee, Hsun-Chung Kuang
  • Publication number: 20240127890
    Abstract: In one example, a non-volatile memory system, comprises an array of non-volatile memory cells arranged in rows and columns, each non-volatile memory cell comprising a source and a drain; a plurality of bit lines, each of the plurality of bit lines coupled to the drain or each non-volatile memory cell in a column of non-volatile memory cells; a source line coupled to the source of each non-volatile memory cell; and an adaptive bias decoder for providing a voltage to an erase gate line of the array during an operation, wherein the adaptive bias decoder adjusts the voltage provided to the erase gate line in response to changes in a voltage of the source line.
    Type: Application
    Filed: December 11, 2023
    Publication date: April 18, 2024
    Inventors: Hieu Van Tran, THUAN VU, STANLEY HONG, STEPHEN TRINH, ANH LY, NHAN DO, MARK REITEN
  • Publication number: 20240124598
    Abstract: Antibodies, fragments thereof, and chimeric proteins comprising same are presented that have specific binding activity against CD30. Advantageously, contemplated molecules can be used in pharmaceutical compositions for immune therapy, particularly in individuals diagnosed with hematopoietic malignancies, including Hodgkin lymphoma, CD30-positive B cell lymphomas, CD30-positive T cell lymphomas, CD30-positive NK cell lymphomas.
    Type: Application
    Filed: September 8, 2023
    Publication date: April 18, 2024
    Applicant: NantBio, Inc.
    Inventors: Clifford Anders Olson, Kayvan Niazi, Helty Adisetiyo, Hermes J. Garban, Mark Guido, Heather McFarlane, Tan Trinh, Shiho Tanaka
  • Patent number: 11961545
    Abstract: Various embodiments of the present disclosure are directed towards a memory device. The memory device has a first transistor having a first source/drain and a second source/drain, where the first source/drain and the second source/drain are disposed in a semiconductor substrate. A dielectric structure is disposed over the semiconductor substrate. A first memory cell is disposed in the dielectric structure and over the semiconductor substrate, where the first memory cell has a first electrode and a second electrode, where the first electrode of the first memory cell is electrically coupled to the first source/drain of the first transistor. A second memory cell is disposed in the dielectric structure and over the semiconductor substrate, where the second memory cell has a first electrode and a second electrode, where the first electrode of the second memory cell is electrically coupled to the second source/drain of the first transistor.
    Type: Grant
    Filed: December 7, 2022
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang, Hai-Dang Trinh, Cheng-Yuan Tsai
  • Patent number: 11963468
    Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode disposed over one or more interconnects and a diffusion barrier layer on the bottom electrode. The diffusion barrier layer has an inner upper surface that is arranged laterally between and vertically below an outer upper surface of the diffusion barrier film. The outer upper surface wraps around the inner upper surface in a top-view of the diffusion barrier layer. A data storage structure is separated from the bottom electrode by the diffusion barrier layer. A top electrode is arranged over the data storage structure.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin, Fa-Shen Jiang
  • Publication number: 20240119272
    Abstract: In one example, a system comprises an analog neural memory array comprising a plurality of non-volatile memory cells arranged into rows and columns; and a voltage generator to provide a voltage to one or more rows of the analog neural memory array, the voltage generator comprising a voltage ladder to generate a plurality of voltages according to a logarithmic formula.
    Type: Application
    Filed: December 13, 2023
    Publication date: April 11, 2024
    Inventors: HIEU VAN TRAN, THUAN VU, STANLEY HONG, STEPHEN TRINH, STEVEN LEMKE, LOUISA SCHNEIDER, NHAN DO
  • Publication number: 20240117986
    Abstract: A device such as a smart thermostat is provided for controlling heating and cooling systems. The device is operable to execute an energy control program to control the heating and a cooling systems based upon different control strategies: a first control strategy that compares the at least one temperature setpoint in the programming schedule to the current measured dry bulb temperature to determine whether to engage or disengage the heating and a cooling systems, and a second control strategy that compares the at least one temperature setpoint in the programming schedule to a normalized humidex temperature to determine whether to engage or disengage the heating and a cooling systems, the normalized humidex temperature being the current measured dry bulb temperature modified by historical humidity values to provide an indicator of thermal comfort within the premise.
    Type: Application
    Filed: December 15, 2023
    Publication date: April 11, 2024
    Inventor: Kevin TRINH
  • Publication number: 20240117324
    Abstract: The disclosure relates to acyl-ACP reductase (AAR) enzyme variants that result in improved fatty aldehyde and fatty alcohol production when expressed in recombinant host cells. The disclosure further relates to methods of making and using such AAR variants for the production of fatty alcohol compositions having particular characteristics.
    Type: Application
    Filed: July 20, 2023
    Publication date: April 11, 2024
    Inventors: Mathew RUDE, Na Trinh, Andreas Schirmer, Jacob Gano
  • Publication number: 20240112003
    Abstract: Numerous examples are disclosed of output circuitry and associated methods in an artificial neural network. In one example, a system comprises an array of non-volatile memory cells arranged into rows and columns, an output block to convert current from columns of the array into a first digital output during a first time period and a second digital output during a second time period, a first output register to store the first digital output during the first time period and to output the stored first digital output during the second time period, and a second output register to store the second digital output during the second time period and to output the stored second digital output during a third time period.
    Type: Application
    Filed: December 8, 2022
    Publication date: April 4, 2024
    Inventors: HIEU VAN TRAN, STEPHEN TRINH, STANLEY HONG, THUAN VU, NGHIA LE, HIEN PHAM
  • Publication number: 20240112736
    Abstract: In one example, a non-volatile memory system, comprises an array of non-volatile memory cells arranged in rows and columns, each non-volatile memory cell comprising a source and a drain; a plurality of bit lines, each of the plurality of bit lines coupled to the drain or each non-volatile memory cell in a column of non-volatile memory cells; a source line coupled to the source of each non-volatile memory cell; and an adaptive bias decoder for providing a voltage to the source line of the array during operation.
    Type: Application
    Filed: December 11, 2023
    Publication date: April 4, 2024
    Inventors: Hieu Van Tran, Thuan Vu, Stanley Hong, Stephen Trinh, Anh Ly, Nhan Do, Mark Reiten
  • Publication number: 20240112729
    Abstract: Numerous examples are disclosed of programming multiple rows in an array in an artificial neural network as part of a single programming operation. In one example, a method comprises ramping up an output of a high voltage generator to a first voltage level; while maintaining the output of the high voltage generator at the first voltage level, programming a plurality of words of K rows of memory cells in an array of memory cells using the output of the high voltage generator, where K>1; and after the programming, ramping down the output of the high voltage generator to a second voltage level.
    Type: Application
    Filed: December 6, 2022
    Publication date: April 4, 2024
    Inventors: Hieu Van TRAN, Stephen TRINH, Stanley HONG, Thuan VU, Anh LY, Fan LUO
  • Patent number: 11946840
    Abstract: An assembly including a cassette having a support layer. At least a portion of the support layer is embedded in a recipient block formed from an agarose gel for securing the recipient block to the cassette. The recipient block has a surface spaced from the support layer and is provided with at least one bore extending from the surface into the recipient block that is adapted to receive a biological sample material. A method for forming an assembly is provided.
    Type: Grant
    Filed: March 30, 2022
    Date of Patent: April 2, 2024
    Assignee: Array Science, LLC
    Inventors: Regan Spencer Fulton, William Scott Crawford, Trinh Kiet Hoac
  • Publication number: 20240104357
    Abstract: Numerous examples are disclosed of input circuitry and associated methods in an artificial neural network. In one example, a system comprises a plurality of address decoders to receive an address and output a plurality of row enabling signals in response to the address; a first plurality of registers to store, sequentially, activation data in response to the plurality of row enabling signals; and a second plurality of registers to store, in parallel, activation data received from the first plurality of registers.
    Type: Application
    Filed: December 8, 2022
    Publication date: March 28, 2024
    Inventors: Hieu Van Tran, Stephen Trinh, Stanley Hong, Thuan Vu, Nghia Le, Hien Pham
  • Publication number: 20240104164
    Abstract: Numerous examples are disclosed of verification circuitry and associated methods in an artificial neural network. In one example, a system comprises a vector-by-matrix multiplication array comprising a plurality of non-volatile memory cells arranged in rows and columns, the non-volatile memory cells respectively capable of storing one of N possible levels corresponding to one of N possible currents, and a plurality of output blocks to receive current from respective columns of the vector-by-matrix multiplication array and generate voltages during a verify operation of the vector-by-matrix multiplication and generate digital outputs during a read operation of the vector-by-matrix multiplication.
    Type: Application
    Filed: December 13, 2022
    Publication date: March 28, 2024
    Inventors: HIEU VAN TRAN, STEPHEN TRINH, STANLEY HONG, THUAN VU, DUC NGUYEN, HIEN HO PHAM
  • Publication number: 20240105263
    Abstract: In one example, a non-volatile memory system comprises an array of non-volatile memory cells arranged in rows and columns, each non-volatile memory cell comprising a source and a drain; a plurality of bit lines, each of the plurality of bit lines coupled to the drain of each non-volatile memory cell in a column of non-volatile memory cells; a source line coupled to the source of each non-volatile memory cell; and an adaptive bias decoder for providing a voltage to a word line of the array during an operation, wherein the adaptive bias decoder adjusts the voltage provided to the word line in response to changes in a voltage of the source line.
    Type: Application
    Filed: December 11, 2023
    Publication date: March 28, 2024
    Applicant: Silicon Storage Technology, Inc.
    Inventors: Hieu Van TRAN, Thuan VU, Stanley HONG, Stephen TRINH, Anh LY, Nhan DO, Mark REITEN
  • Publication number: 20240104676
    Abstract: An improved parcel growth prediction system that uses parcel data, population data, and artificial intelligence to predict the growth of a geographic area at a micro level (e.g., a real estate parcel level) is described herein. For example, the improved parcel growth prediction system may generate a graph model and apply the graph model as an input to an artificial intelligence model to predict the likelihood that a particular parcel may be developed some time in the future. Ultimately, implementing the improved parcel growth prediction system described herein may lead to more precise placements of infrastructure projects and/or to infrastructure projects that more precisely support the needs of the population of a geographic area as time passes.
    Type: Application
    Filed: September 20, 2023
    Publication date: March 28, 2024
    Inventors: Kien Trong Trinh, Daniel Lawrence Gossett, Charles Presley Reynolds, Hans Christian Dumke, Bin He
  • Publication number: 20240103678
    Abstract: The present disclosure generally relates to user interfaces for electronic devices, including user interfaces for navigating between and/or interacting with extended reality user interfaces.
    Type: Application
    Filed: September 15, 2023
    Publication date: March 28, 2024
    Inventors: Allison W. DRYER, Anshu K. CHIMALAMARRI, Giancarlo YERKES, Nahckjoon KIM, Stephen O. LEMAY, Jessica TRINH
  • Patent number: 11941643
    Abstract: Provided is a computer-implemented method for authenticating a user. The method includes registering a plurality of user accounts for a plurality of users based at least partially on user information and account data for each user of the plurality of users, the account data for each user including an account identifier associated with a portable payment device, generating an identity score for each user, registering a plurality of provider accounts for a plurality of third-party service providers based at least partially on third-party service provider data, receiving a request to authenticate a user of the plurality of users, receiving user credentials corresponding to a user account of the user, validating the user credentials based at least partially on the identity score of the user, and communicating an authentication response message to the third-party system in response to validating the user credentials.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: March 26, 2024
    Assignee: Visa International Service Association
    Inventors: Aditi Rungta, Kieu Trinh Nguyen, Wen Zhao Cheng, Xi Li, Xudong Wu
  • Patent number: 11939584
    Abstract: Genetically modified microorganisms that have the ability to convert carbon substrates into chemical products such as 2,3-BDO are disclosed. For example, genetically modified methanotrophs that are capable of generating 2,3-BDO at high titers from a methane source are disclosed. Methods of making these genetically modified microorganisms and methods of using them are also disclosed.
    Type: Grant
    Filed: July 31, 2021
    Date of Patent: March 26, 2024
    Assignee: PRECIGEN, INC.
    Inventors: Xinhua Zhao, Mark Anton Held, Tina Huynh, Lily Yuin Chao, Na Trinh, Matthias Helmut Schmalisch, Bryan Yeh, James Kealey, Kevin Lee Dietzel