Patents by Inventor An Tsai
An Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11728109Abstract: A key structure includes a casing, a covering member, a pressing element, a triggering post, a switch element. The casing has an opening. The opening is covered by the covering member. The pressing element is disposed within the opening and connected with the covering member. The pressing element includes a middle part and an extension part. The triggering post is installed on the middle part of the pressing element. The triggering post is extended in the direction toward the inner position of the casing. When an external force is applied to the middle part of the pressing element, the triggering post is moved toward the switch element to push the switch element. When the external force is applied to the extension part of the pressing element, the triggering post is correspondingly moved with the pressing element in an inclined manner to push the switch element.Type: GrantFiled: June 28, 2022Date of Patent: August 15, 2023Assignee: PRIMAX ELECTRONICS LTDInventors: Yung-Tai Pan, Chun-Che Wu, Ming-Hao Hsieh, Sheng-An Tsai
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Patent number: 11719977Abstract: A light reflecting structure, a backlight module, and a display device are provided. The light reflecting structure is configured to reflect light emitted from plural light emitting units. The light reflecting structure includes a bottom portion and plural sidewall portions. The sidewall portions are erected on the bottom portion. The sidewall portions respectively and correspondingly surround the light-emitting units, and the light emitted from each of the light-emitting units can be directed to a light reflecting surface corresponding to each of the sidewall portions to be reflected outward. A distance P is defined between any two adjacent sidewall portions, and each of the sidewall portions has a height H1. The distance P and the height H1 satisfy a first inequality, and the first inequality is H1<P/2Ă—tan ?. ? represents a complementary angle of a half light-intensity angle of each of the light-emitting units.Type: GrantFiled: January 11, 2022Date of Patent: August 8, 2023Assignees: Radiant(Guangzhou) Opto-Electronics Co., Ltd, Radiant Opto-Electronics CorporationInventors: Hui-Yu Huang, Hsiu-Yi Lai, Shih-Cheng Hsiao, Shu-An Tsai, Pei-Ling Kao, I-Cheng Liu
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Publication number: 20230216499Abstract: A control wheel includes a casing, a wheel ring, a first magnetic element, a pivotal shaft and a second magnetic element. The casing includes an accommodation structure and a concave structure. The accommodation structure includes a base. The wheel ring is disposed within the accommodation structure. The wheel ring is exposed outside through the accommodation structure and the concave structure. The pivotal shaft is disposed within the wheel ring and connected with the base of the accommodation structure. The wheel ring is rotatable relative to the pivotal shaft. The first magnetic element is disposed within the wheel ring. The second magnetic element is disposed within the base of the accommodation structure. The first magnetic element of the wheel ring and the second magnetic element are magnetically attracted by each other. Consequently, a rotating speed of the wheel ring is decreased.Type: ApplicationFiled: July 5, 2022Publication date: July 6, 2023Inventors: Chun-Che Wu, Ming-Hao Hsieh, Sheng-An Tsai
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Publication number: 20230215668Abstract: A key structure includes a casing, a covering member, a pressing element, a triggering post, a switch element. The casing has an opening. The opening is covered by the covering member. The pressing element is disposed within the opening and connected with the covering member. The pressing element includes a middle part and an extension part. The triggering post is installed on the middle part of the pressing element. The triggering post is extended in the direction toward the inner position of the casing. When an external force is applied to the middle part of the pressing element, the triggering post is moved toward the switch element to push the switch element. When the external force is applied to the extension part of the pressing element, the triggering post is correspondingly moved with the pressing element in an inclined manner to push the switch element.Type: ApplicationFiled: June 28, 2022Publication date: July 6, 2023Inventors: Yung-Tai Pan, Chun-Che Wu, Ming-Hao Hsieh, Sheng-An Tsai
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Patent number: 11681379Abstract: A mouse device includes a wheel control mechanism and a control unit. The control unit is electrically connected with a magnetic force module and a rotating speed detector of the wheel control mechanism. Under control of the control unit, a first direction current or a second direction current is selectively provided to drive the magnetic force module. The flowing directions of the first direction current and the second direction current are opposite. Consequently, the rotating mode of the wheel control mechanism can be switched between different modes.Type: GrantFiled: September 19, 2022Date of Patent: June 20, 2023Assignee: PRIMAX ELECTRONICS LTD.Inventors: Chun-Nan Su, Chun-Che Wu, Chun-Lin Chu, Shu-An Huang, Ming-Hao Hsieh, Sheng-An Tsai, Li-Kuei Cheng
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Patent number: 11646381Abstract: A method for manufacturing a non-volatile memory device includes forming a device isolation structure in a substrate, forming a floating gate, an inner layer dielectric (ILD) layer, and a floating gate contact on the substrate, and forming an interconnect structure on the ILD layer. The interconnect structure includes alternately stacked metal layers and inter metal dielectric (IMD) layers and vias connecting the upper and lower metal layers. In the method, after the ILD layer is formed, first and second comb-shaped contacts are simultaneously formed in at least one of the ILD layer and the IMD layers above the device isolation structure, wherein the first comb-shaped contact is a floating gate extension part, and the second comb-shaped contact is a control gate. During the forming of the interconnect structure, a structure is simultaneously formed for electrically connecting the floating gate extension part to the floating gate contact.Type: GrantFiled: June 21, 2022Date of Patent: May 9, 2023Assignee: Powerchip Semiconductor Manufacturing CorporationInventors: Shiangshiou Yen, Bo-An Tsai
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Publication number: 20230088293Abstract: A residual stress measurement method of a curved surface block includes steps of: locating a point at which a to-be-detected curved surface of a curved surface block has a highest curvature as a to-be-detected point; applying an instrument integrating an X-ray light resource and a detector, measuring the to-be-detected point by using an X-ray diffraction theory, and analyzing and calculating, in combination with a sin2 ? method, a strain value measured by using the instrument; and calculating, in combination with material property measurement data of the curved surface block material, a residual stress by introducing a curved surface block residual stress calculation model.Type: ApplicationFiled: November 29, 2022Publication date: March 23, 2023Inventors: Zong Rong LIU, Hsiu An TSAI
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Publication number: 20230081959Abstract: A system and a method for managing a virtual network function (VNF) and a multi-access edge computing (MEC) topology are provided. The method includes the following steps. A first VNF descriptor (VNFD) corresponding to a first VNF is received. According to the first VNFD, first provision data is generated. According to the first VNFD, first internal topology information of the first VNF is generated. According to the first provision data, the first VNF is instantiated to be provisioned. In response to provisioning the first VNF, a graphical user interface including the first internal topology information is output, and the first internal topology information includes a network component communicatively connected to the first VNF.Type: ApplicationFiled: October 24, 2021Publication date: March 16, 2023Applicant: Chunghwa Telecom Co., Ltd.Inventors: Wen-Sheng Li, Si-An Ciou, Chi-Te Chiu, Chun-Hao Chen, Jia-An Tsai
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Publication number: 20230062503Abstract: Hierarchical structured sparse parameter pruning and processing improves runtime performance and energy efficiency of neural networks. In contrast with conventional (non-structured) pruning which allows for any distribution of the non-zero values within a matrix that achieves the desired sparsity degree (e.g., 50%) and is consequently difficult to accelerate, structured hierarchical sparsity requires each multi-element unit at the coarsest granularity of the hierarchy to be pruned to the desired sparsity degree. The global desired sparsity degree is a function of the per-level sparsity degrees. Distribution of non-zero values within each multi-element unit is constrained according to the per-level sparsity degree at the particular level of the hierarchy. Each level of the hierarchy may be associated with a hardware (e.g., logic or circuit) structure that can be enabled or disabled according to the per-level sparsity.Type: ApplicationFiled: February 28, 2022Publication date: March 2, 2023Inventors: Yannan Wu, Po-An Tsai, Saurav Muralidharan, Joel Springer Emer
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Patent number: 11543310Abstract: A method for measuring a residual stress of a curved-surface bulk material includes steps of: locating a point at which a to-be-detected curved surface of a curved-surface bulk material has a highest curvature as a to-be-detected point; applying an instrument integrating an X-ray light resource and a detector, measuring the to-be-detected point by using an X-ray diffraction theory, and analyzing and calculating, in combination with a cos ? method, a strain value measured by using the instrument; and calculating, in combination with material property measurement data of the curved-surface bulk material, a curved-surface residual stress by introducing a curved-surface bulk material residual stress calculation model.Type: GrantFiled: December 18, 2020Date of Patent: January 3, 2023Assignee: METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTREInventors: Zong-Rong Liu, Hsiu-An Tsai
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Publication number: 20220406933Abstract: A semiconductor structure, the semiconductor structure includes a substrate with a first conductivity type and a laterally diffused metal-oxide-semiconductor (LDMOS) device on the substrate, the LDMOS device includes a first well region on the substrate, and the first well region has a first conductivity type. A second well region with a second conductivity type, the second conductivity type is complementary to the first conductivity type, a source doped region in the second well region with the first conductivity type, and a deep drain doped region in the first well region, the deep drain doped region has the first conductivity type.Type: ApplicationFiled: September 30, 2021Publication date: December 22, 2022Applicant: Powerchip Semiconductor Manufacturing CorporationInventors: Hirokazu Fujimaki, Bo-An Tsai, Shih-Ping Lee
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Patent number: 11519798Abstract: A residual stress detection device for a curved surface coating and a detection method thereof is provided, where its structure includes: a detection piece carrier, configured to fix the detection piece, so that a to-be-detected point on the detection piece remains at a highest point; an X-ray generation source, radiating an X-ray to the to-be-detected point fixedly or along a path; a detection element, including a moving mechanism, where the moving mechanism moves the detection element along a path extending toward a direction orthogonal to an incident direction of the X-ray, so that the detection element receives and detects intensity of a diffraction X-ray at a position of the diffraction X-ray; and a stress calculation module, obtaining a strain value based on an intensity peak of the diffraction X-ray detected by the detection element, and calculating a residual stress value of the detection piece by using a formula.Type: GrantFiled: December 18, 2018Date of Patent: December 6, 2022Assignee: METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTREInventors: Zong-Rong Liu, Hsiu-An Tsai
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Publication number: 20220338366Abstract: A support frame includes first and second mounting members, and an adjusting member. The second mounting member defines a groove. One groove wall of the groove defines a plurality of positioning holes. The adjusting member includes a base body, a sliding member, and an elastic member. The base body is disposed on the first mounting member, and at least a part of the base body is accommodated in the groove. The sliding member is slidably disposed on the base body and includes a clamping body. The elastic member is disposed on the sliding member, and the elastic member can drive the sliding member to engage the clamping body with one of the plurality of positioning holes. When the support frame is in a cabinet, an interior installation size of the cabinet is adjustable for any particular relative position between the first and second mounting members.Type: ApplicationFiled: March 28, 2022Publication date: October 20, 2022Inventors: CHIH-FENG CHANG, HUNG-LIANG CHUNG, TI-AN TSAI
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Patent number: 11465854Abstract: Embodiments of a mobile carrier monitoring apparatus are disclosed. The apparatus includes one or more mobile carriers configured to receive items being manufactured in its interior and configured be moved by a transport system to multiple positions within a manufacturing facility. A mobile carrier control system is positioned in the interior or on the exterior of each mobile carrier, as are one or more sensors that are coupled to the mobile carrier control system. A communication system is positioned in the interior or on the exterior of each mobile carrier and communicatively coupled to the at least one sensor and to the mobile carrier control system, and an electrical power system positioned in the interior or on the exterior of each mobile carrier and coupled to deliver electrical power to the mobile carrier control system, to the one or more sensors, and to the communication system. Other embodiments are disclosed and claimed.Type: GrantFiled: November 22, 2019Date of Patent: October 11, 2022Assignee: TRICORNIECH TAIWANInventors: Shih-An Tsai, Li-Peng Wang, Tsung-Kuan A. Chou
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Publication number: 20220320341Abstract: A method for manufacturing a non-volatile memory device includes forming a device isolation structure in a substrate, forming a floating gate, an inner layer dielectric (ILD) layer, and a floating gate contact on the substrate, and forming an interconnect structure on the ILD layer. The interconnect structure includes alternately stacked metal layers and inter metal dielectric (IMD) layers and vias connecting the upper and lower metal layers. In the method, after the ILD layer is formed, first and second comb-shaped contacts are simultaneously formed in at least one of the ILD layer and the IMD layers above the device isolation structure, wherein the first comb-shaped contact s a floating gate extension part, and the second comb-shaped contact is a control gate. During the forming of the interconnect structure, a structure is simultaneously formed for electrically connecting the floating gate extension part to the floating gate contact.Type: ApplicationFiled: June 21, 2022Publication date: October 6, 2022Applicant: Powerchip Semiconductor Manufacturing CorporationInventors: Shiangshiou Yen, Bo-An Tsai
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Patent number: 11424370Abstract: A method for manufacturing a non-volatile memory device includes forming a device isolation structure in a substrate, forming a floating gate, an inner layer dielectric (ILD) layer, and a floating gate contact on the substrate, and forming an interconnect structure on the ILD layer. The interconnect structure includes alternately stacked metal layers and inter metal dielectric (IMD) layers and vias connecting the upper and lower metal layers. In the method, after the ILD layer is formed, first and second comb-shaped contacts are simultaneously formed in at least one of the ILD layer and the IMD layers above the device isolation structure, wherein the first comb-shaped contact is a floating gate extension part, and the second comb-shaped contact is a control gate. During the forming of the interconnect structure, a structure is simultaneously formed for electrically connecting the floating gate extension part to the floating gate contact.Type: GrantFiled: January 7, 2021Date of Patent: August 23, 2022Assignee: Powerchip Semiconductor Manufacturing CorporationInventors: Shiangshiou Yen, Bo-An Tsai
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Patent number: 11404227Abstract: A keyboard device includes a casing and at least one supporting leg. The supporting leg includes a first supporting part, a second supporting part and a pivotal shaft. The supporting leg is pivotally coupled to an accommodation space of the casing through the pivotal shaft. The pivotal shaft is rotatable relative to the casing. Consequently, the supporting leg can be switched between a stored state and a supporting state. When the supporting leg is in the stored state, the supporting leg is accommodated within the accommodation space, and the accommodation space is covered by the first supporting part and the second supporting part. While the supporting leg is switched from the stored state to the supporting state, the first supporting part is pushed into the accommodation space in response to an external force, and the second supporting part is correspondingly moved away from the accommodation space.Type: GrantFiled: June 29, 2021Date of Patent: August 2, 2022Assignee: PRIMAX ELECTRONICS LTD.Inventors: Chun-Lin Chu, Sheng-An Tsai, Hsiang-Yu Ou
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Publication number: 20220196496Abstract: A method for measuring a residual stress of a curved-surface bulk material includes steps of: locating a point at which a to-be-detected curved surface of a curved-surface bulk material has a highest curvature as a to-be-detected point; applying an instrument integrating an X-ray light resource and a detector, measuring the to-be-detected point by using an X-ray diffraction theory, and analyzing and calculating, in combination with a cos ? method, a strain value measured by using the instrument; and calculating, in combination with material property measurement data of the curved-surface bulk material, a curved-surface residual stress by introducing a curved-surface bulk material residual stress calculation model.Type: ApplicationFiled: December 18, 2020Publication date: June 23, 2022Inventors: ZONG-RONG LIU, HSIU-AN TSAI
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Publication number: 20220191775Abstract: A user equipment terminal (UE) performs cell search in a wireless network. The UE determines a search pattern based on statistics of search trials performed at one or both of a location and time in a recurrent time cycle. The search pattern includes a sequence of alternating search durations and non-search durations for a configurable number of searches. Furthermore, the search pattern includes the search durations or the non-search durations that increase, decrease, or no-change according to probability derived from the statistics. The UE performs the cell search according to the search pattern.Type: ApplicationFiled: November 30, 2021Publication date: June 16, 2022Inventors: Pei-Tsung Wu, Shang-An Tsai, Yi-Chun Chu
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Publication number: 20220165884Abstract: A method for manufacturing a non-volatile memory device includes forming a device isolation structure in a substrate, forming a floating gate, an inner layer dielectric (ILD) layer, and a floating gate contact on the substrate, and forming an interconnect structure on the ILD layer. The interconnect structure includes alternately stacked metal layers and inter metal dielectric (IMD) layers and vias connecting the upper and lower metal layers. In the method, after the ILD layer is formed, first and second comb-shaped contacts are simultaneously formed in at least one of the ILD layer and the IMD layers above the device isolation structure, wherein the first comb-shaped contact is a floating gate extension part, and the second comb-shaped contact is a control gate. During the forming of the interconnect structure, a structure is simultaneously formed for electrically connecting the floating gate extension part to the floating gate contact.Type: ApplicationFiled: January 7, 2021Publication date: May 26, 2022Applicant: Powerchip Semiconductor Manufacturing CorporationInventors: Shiangshiou Yen, Bo-An Tsai