Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE receives, from a base station, a trigger for reporting M CSI reports, M being an integer greater than 0. The UE determines that P processing units are available for calculation of CSI reports, each of the P processing units indicating a predetermined amount of computing power of the UE. The UE selects N CSI reports from the M CSI reports in accordance with a predetermined rule, N being a maximum integer that allows total processing units assigned for calculation of the N CSI reports to be smaller than or equal to the P processing units. The UE updates the N CSI reports.

Abstract: Provided is a method of grant-free uplink transmission for a user equipment. The user equipment receives a grant-free configuration parameter. The user equipment receives at least one reference signal. The user equipment performs channel measurement based on the at least one reference signal. The user equipment decides at least one uplink beamforming weight or at least one precoder based on the at least one reference signal. The user equipment performs grant-free uplink transmission based on the decided at least one uplink beamforming weight or the at least one precoder and the grant-free configuration parameter.

Abstract: A method of making an osmium(II) complex having Formula I, L1-Os-L2, wherein L1 and L2 are independently a biscarbene tridentate ligand, wherein L1 and L2 can be same or different is disclosed. The method includes (a) reacting a precursor of ligand L1 with an osmium precursor to form an intermediate product, wherein the osmium precursor having the formula OsHx(PR3)y, wherein x is an integer from 2 to 6 and y is an integer from 2 to 5, and R is selected from the group consisting of aryl, alkyl and cycloalkyl; and (b) reacting a precursor of ligand L2 with said intermediate product.

Abstract: The present disclosure provides a semiconductor structure, including a first semiconductor device having a first surface and a second surface, the second surface being opposite to the first surface, a semiconductor substrate over the first surface of the first semiconductor device, and a III-V etch stop layer in contact with the second surface of the first semiconductor device. The present disclosure also provides a manufacturing method of a semiconductor structure, including providing a temporary substrate having a first surface, forming a III-V etch stop layer over the first surface, forming a first semiconductor device over the III-V etch to stop layer, and removing the temporary substrate by an etching operation and exposing a surface of the III-V etch stop layer.

Abstract: A magnetic memory cell includes a substrate, a transistor, a first dielectric layer disposed on the substrate, a landing pad in the first dielectric layer, a second dielectric layer covering the first dielectric layer and the landing pad, a memory stack in the second dielectric layer, and a source line in the first dielectric layer. The first dielectric layer covers the transistor. The landing pad is situated in a first horizontal plane and is coupled to a drain region of the transistor. The memory stack has a bottom electrode connected to the landing pad and a top electrode electrically connected to a bit line. The source line is situated in a second horizontal plane and is connected to a source region of the transistor. The second horizontal plane and the first horizontal plane are not coplanar.

Abstract: A method includes forming multiple photonic devices in a semiconductor wafer, forming a v-shaped groove in a first side of the semiconductor wafer, forming an opening extending through the semiconductor wafer, forming multiple conductive features within the opening, wherein the conductive features extend from the first side of the semiconductor wafer to a second side of the semiconductor wafer, forming a polymer material over the v-shaped groove, depositing a molding material within the opening, wherein the multiple conductive features are separated by the molding material, after depositing the molding material, removing the polymer material to expose the v-shaped groove, and placing an optical fiber within the v-shaped groove.

Abstract: The described positional awareness techniques employing visual-inertial sensory data gathering and analysis hardware with reference to specific example implementations implement improvements in the use of sensors, techniques and hardware design that can enable specific embodiments to provide positional awareness to machines with improved speed and accuracy.

Abstract: A solar cell testing system including a lower electrode, a solar cell, an encapsulation material, a sodium-containing template, an upper electrode, a voltage source and a measuring circuit is provided. The solar cell is disposed on the lower electrode. The encapsulation material is disposed on the solar cell. The sodium-containing template is disposed on the encapsulation material, wherein the sodium-containing template has a sodium ion content ranging between 9-39%. The upper electrode is disposed on the sodium-containing template. The voltage source is connected between the upper electrode and the lower electrode. The measuring circuit is connected between the solar cell and the lower electrode for measuring a shunt resistance of the solar cell.

Abstract: Apparatus and methods implementing a hardware queue management device for reducing inter-core data transfer overhead by offloading request management and data coherency tasks from the CPU cores. The apparatus include multi-core processors, a shared L3 or last-level cache (“LLC”), and a hardware queue management device to receive, store, and process inter-core data transfer requests. The hardware queue management device further comprises a resource management system to control the rate in which the cores may submit requests to reduce core stalls and dropped requests. Additionally, software instructions are introduced to optimize communication between the cores and the queue management device.

Abstract: A spoiler mechanism for an aircraft includes a spoiler fore-section and a spoiler aft-section. The spoiler fore-section includes a forward end configured to couple to a wing structure of an aircraft and a hinge end. The hinge end includes a first hinge coupling and a first retainer portion. The spoiler aft-section includes a second retainer portion and a second hinge coupling coupled to the first hinge coupling of the spoiler fore-section. The first retainer portion and the second retainer portion are configured to engage one another when the spoiler aft-section is aligned with the spoiler fore-section, and the first retainer portion and the second retainer portion are configured to disengage from one another responsive to the spoiler aft-section pivoting upward relative to the spoiler fore-section.

Abstract: A camber adjustment system for a wing of an aircraft includes a droop panel that is configured to moveably couple to a portion of the wing, a flap, a cam rod moveably coupled to the droop panel, a bell crank cam arm moveably coupled to the flap, and a jackscrew interface between the cam rod and the bell crank cam arm. The droop panel is configured to move in response to movement of the flap via the jackscrew interface.

Abstract: The present disclosure provides a method of patterning a target material layer over a semiconductor substrate. The method includes steps of forming a spacer feature over the target material layer using a first sub-layout and performing a photolithographic patterning process using a second sub-layout to form a first feature. A portion of the first feature extends over the spacer feature. The method further includes steps of removing the portion of the first feature extending over the spacer feature and removing the spacer feature. Other methods and associated patterned semiconductor wafers are also provided herein.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device with fin structures having different top surface crystal orientations and/or different materials. The present disclosure provides a semiconductor structure including n-type FinFET devices and p-type FinFET devices with different top surface crystal orientations and with fin structures having different materials. The present disclosure provides a method to fabricate a semiconductor structure including n-type FinFET devices and p-type FinFET devices with different top surface crystal orientations and different materials to achieve optimized electron transport and hole transport. The present disclosure also provides a diode structure and a bipolar junction transistor structure that includes SiGe in the fin structures.

Abstract: A shoemaking machine includes a sewing device having a cantilever unit, a work platform and a clamping frame unit. The cantilever unit has a sewing needle extending toward the clamping frame unit. A driving device is disposed on the cantilever unit, and includes a movable seat that is movable toward and away from the clamping frame unit. An ultrasonic positioning device is connected to the cantilever unit, and includes a welding head facing the clamping frame unit. The clamping device is connected to the movable seat and has a clamping space. The ultrasonic positioning device is inserted into the clamping space and is clamped by the clamping device.

Abstract: Provided herein are compounds of Formula (I) and uses thereof for inhibiting the activity of D-amino acid oxidase (DAAO) or treating diseases or disorders associated with DAAO, such as a central nervous system (CNS) disorder, obesity, diabetes, or hyperlipidemia. Also provided in the present disclosure are methods of synthesizing the Formula (I) compounds described herein.

Abstract: A method of a physical uplink shared channel (PUSCH) repetition performed by a user equipment (UE) is disclosed. The method comprises receiving, from a base station (BS), a configuration for a first PUSCH transmission, in case a Radio Resource Control (RRC) message including information to configure a slot-based repetition operation for the first PUSCH transmission is received from the BS, not receiving, from the BS, an RRC message including information to configure a non-slot based repetition operation for a second PUSCH transmission during the first PUSCH transmission with the slot-based repetition operation, and in case an RRC message including information to configure a non-slot based repetition operation for the second PUSCH transmission is received from the BS, not receiving, from BS, an RRC message including information to configure a slot-based repetition operation for the first PUSCH transmission during the second PUSCH transmission with the non-slot based repetition operation.

Abstract: A method includes receiving, through RRC signaling from a base station, indicating a dormancy cell group having at least a first serving cell and a second serving cell, receiving a first indicator indicating a dormant behavior to the first serving cell is to be activated when the first serving cell is activated, receiving a second indicator indicating a dormant behavior to the second serving cell is to be deactivated when the second serving cell is activated. The method also includes receiving a cell activation indication to activate the first serving cell and the second serving cell, activating the first serving cell and the second serving cell, applying the dormant behavior to the first serving cell based on the first indicator when the first serving cell is activated, and not applying the dormant behavior to the second serving cell based on the second indicator when the second serving cell is activated.

Abstract: A head-mounted display device including a body, a display element, and two lens groups is provided. The display element is disposed on the body and is adapted to provide an image beam. The two lens groups are disposed on a transmission path of the image beam. Each the lens group includes a plurality of lenses, wherein one of the lenses has an astigmatism surface on at least one side of the display element. The astigmatism surface is non-rotationally symmetrical, and the image beam has astigmatic aberration after passing through the astigmatism surface.