Abstract: Semiconductor devices, methods of manufacture thereof, and methods of manufacturing capacitors are disclosed. In an embodiment, a method of manufacturing a capacitor includes: etching a trench in a workpiece. The trench may extend into the workpiece from a major surface of the workpiece. The method further includes lining the trench with a bottom electrode material and lining the bottom electrode material in the trench with a dielectric material. The dielectric material may have edges proximate the major surface of the workpiece. The method further includes forming a top electrode material over the dielectric material in the trench, and etching away a portion of the bottom electrode material and a portion of the top electrode material proximate the edges of the dielectric material.

Abstract: The present disclosure provides a liquid crystal lens and a liquid crystal spectacle. The liquid crystal lens includes a first substrate and a second substrate arranged opposite to each other to form a cell, and a liquid crystal layer arranged between the first substrate and the second substrate. The first substrate includes a first transparent base plate, a first alignment layer, and a first transparent electrode. The second substrate includes a second transparent base plate, a second transparent electrode, a second alignment layer and a transparent pattern layer. The first alignment layer has an alignment direction parallel to an alignment direction of the second alignment layer. An upper surface of the transparent pattern layer and upper and lower surfaces of the second transparent electrode are arc surfaces, and the upper surface of the transparent pattern layer is in contact with the lower surface of the second transparent electrode.

Abstract: An exercise device for performing a variety of exercises in both doorway-mounted and floor-mounted configurations is described. The device includes a horizontal bar configured for engagement with a doorframe, a pair of support arms, each having one end attached to the horizontal bar and the other end extending through a doorway, and a pivot bar connected between the support arms. The device further includes a pair of pivot arms configured to be rotated about the pivot bar at their first ends so as to be oriented and secured in a plurality of different angular positions relative to the support arms, and a pull-up bar including at least one grip handle configured to be rotated about the pivot arms at their second ends so as to be oriented and secured in a plurality of different angular positions relative to the pivot arms.

Abstract: The present invention provides a compound of Formula (I) or a pharmaceutically acceptable salt thereof wherein R1, R2, R3, A1, A2, A3, A4, L, B1, B2, B3 and B4 are as defined herein. The compounds of Formula I have been found to act as glucagon antagonists or inverse agonists. Consequently, the compounds of Formula I and the pharmaceutical compositions thereof are useful for the treatment of diseases, disorders, or conditions mediated by glucagon.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate of a first conductivity type and an epitaxial structure of the first conductivity type disposed on the substrate. The semiconductor device further includes a well region having a first doping concentration of a second conductivity type disposed in the epitaxial structure and the substrate. The semiconductor device further includes a drain region and a source region respectively formed in the epitaxial structure inside and outside of the well region. The semiconductor device further includes a body region of the first conductivity type disposed under the source region, and a pair of first and second doped regions disposed in the well region between the drain region and the source region. The first and second doped regions extend outside of the well region and toward the body region.

Abstract: A display panel includes gate lines and a gate driver. The gate driver includes series coupled driving stages, in which an N-th driving stage of the series-coupled driving stages includes a driving unit and an input control unit. The driving unit transmits a first clock signal according to a control voltage level of a control node, so as to output a gate-driving signal. The input control unit transmits the gate-driving signal outputted from an (N?1)-th driving stage to the control nodes, so as to adjust the control voltage level to one of a first voltage level and a second voltage level. A predetermined time interval is present between a rising edge of the first clock signal and a falling edge of the second clock signal. During the predetermined time interval, the control voltage level is pulled to the first voltage level by the input control unit.

Abstract: A resistive random access memory (RRAM) cell comprises a transistor having a gate and a source/drain region, a bottom electrode coplanar with the gate, a resistive material layer over the bottom electrode, a top electrode over the resistive material layer, and a conductive material electrically connecting the bottom electrode to the source/drain region.

Abstract: A method of forming an Al—Zn—Si—Mg alloy coating on a steel strip includes dipping steel strip into a bath of molten Al—Zn—Si—Mg alloy and forming a coating of the alloy on exposed surfaces of the steel strip. The method also includes controlling conditions in the molten coating bath and downstream of the coating bath so that there is a uniform Al/Zn ratio across the surface of the coating formed on the steel strip. An Al—Zn—Mg—Si coated steel strip includes a uniform Al/Zn ratio on the surface or the outermost 1-2 ?m of the Al—Zn—Si—Mg alloy coating.

Abstract: An image sensor structure is provided. The image sensor device structure includes a substrate, and the substrate includes an array region and a peripheral region. The image sensor device structure includes an anti-reflection layer formed on the substrate and a buffer layer formed on the anti-reflection layer. The image sensor device structure includes a first etch stop layer formed on the buffer layer and a metal grid structure formed on the first etch stop layer. The image sensor device structure also includes a dielectric layer formed on the metal grid structure.

Abstract: A light emitting device, includes: a substrate, including a top surface, a bottom surface, a first side surface connecting the top surface and the bottom surface, a first group of deteriorated region, and a second group of deteriorated region; and a semiconductor stack formed on the top surface of the substrate, wherein the first side surface includes a first group of convex region and a first group of concave region, wherein the first group of convex region includes the first group of deteriorated region, and the first group of concave region includes the second group of deteriorated region.

Abstract: A package includes an inorganic dielectric layer, and a capacitor. The capacitor includes a bottom electrode having a top surface in contact with a top surface of the inorganic dielectric layer, an insulator over the bottom electrode, and a top electrode over the insulator. The package further includes a polymer layer covering the capacitor, with a portion of the polymer layer being coplanar with the capacitor and encircling the capacitor. The polymer contacts the top surface of the inorganic dielectric layer.

Abstract: The present disclosure relates to a method the present disclosure relates to an integrated chip having an active pixel sensor with a gate dielectric protection layer that reduces damage to an underlying gate dielectric layer during fabrication, and an associated method of formation. In some embodiments, the integrated chip has a photodetector disposed within a substrate, and a gate structure located over the substrate. A gate dielectric protection layer is disposed over the substrate and extends from along a sidewall of the gate structure to a location overlying the photodetector. The gate dielectric protection layer has an upper surface that is vertically below an upper surface of the gate structure.

Abstract: A detection circuit is used to detect a connection state between a first signal port of an electronic device and a first external device. The detection circuit includes a signal generator, a switch module, a signal detector, and a processing unit. The signal generator generates a test signal. During a test process, the signal generator is electrically connected to the first signal port by the switch module, such that the test signal is sent to the first signal port to test the connection state of the first signal port. The signal detector produces a detection signal according to the connection state of the first signal port. The processing unit determines the state of connection between the first signal port and the first external device by comparing the voltage of the detection signal with a threshold value.

Abstract: The invention discloses a tendon stripper including a stripping device and a rod. The stripping device includes a stripping member and at least one coupling member coupling to the stripping member. The stripping member has a blade portion and a separating portion separating the stripping member into several parts. The rod has a handle end and a coupling end opposite to the handle end. The coupling end couples to the coupling member of the stripping device. The separating portion allows the stripping member to be divided into first and second parts, and the first and second parts can be combined to each other to jointly receive the tendon. This avoids the generation of the incisions during the tendon transplantation. In addition, since the tendon stripper does not require any instrument for retaining the free end of the tendon, a convenient surgical procedure is provided.

Abstract: A method of fabrication of alignment marks for a non-STI CMOS image sensor is introduced. In some embodiments, zero layer alignment marks and active are alignment marks may be simultaneously formed on a wafer. A substrate of the wafer may be patterned to form one or more recesses in the substrate. The recesses may be filled with a dielectric material using, for example, a field oxidation method and/or suitable deposition methods. Structures formed by the above process may correspond to elements of the zero layer alignment marks and/or to elements the active area alignment marks.

Abstract: This disclosure relates to a combination for inhibiting or removing biofouling and a method for inhibiting biofouling growth or removing biofouling. This disclosure also relates to a combination including halogen-type oxidizers, sulfur-containing compounds, and ammonium salts and/or urea. Also disclosed are methods for inhibiting the biofouling growth in a reverse osmosis membrane separation device or nanofiltration membrane separation device or removing the biofouling in a reverse osmosis membrane separation device or nanofiltration membrane separation device.

Abstract: Motion sensors of a mobile device mounted to a vehicle are used to detect a mount angle of the mobile device. The motion sensors are used to determine whether the vehicle is accelerating or de-accelerating, whether the vehicle is turning and whether the mount angle of the mobile device is rotating. The mount angle of the mobile device is obtained from data output from the motion sensors and can be used to correct a compass heading. Data from the motion sensors that are obtained while the vehicle is turning or the mobile device is rotating are not used to obtain the mount angle.

Abstract: A mid-turbine frame (MTF) for a gas turbine engine includes an inner manifold directing air to a turbine rotor of the gas turbine engine. The MTF includes an outer MTF case and an inner MTF case. The inner manifold of the MTF is located in the inner case of the MTF.

Abstract: An encapsulated semiconductor device includes a device die with a semiconductor device fabricated thereon. A carrier layer opposite the device die covers the semiconductor device. A dam supports the carrier layer above the device die, the dam being located therebetween. The semiconductor device further includes a first sealant portion for attaching the dam to the device die, and a means for attaching the dam to the carrier layer. The device die, the dam, and the carrier layer form a sealed cavity enclosing the semiconductor device. A method of encapsulating semiconductor devices formed on a device wafer includes forming an assembly including a carrier wafer and a plurality of dams thereon. After the step of forming, the method attaches the plurality of dams to the device wafer to form a respective plurality of encapsulated semiconductor devices.

Abstract: Forming a metal layer on a solar cell. Forming a metal layer can include placing a patterned metal foil on the solar cell, where the patterned metal foil includes a positive busbar, a negative busbar, a positive contact finger extending from the positive busbar, a negative contact finger extending from the negative busbar, and a metal strip, and one or more tabs. The positive and negative busbars and the positive and negative contact fingers can be connected to one another by the metal strip and tabs. Forming the metal layer can further include coupling the patterned metal foil to the solar cell and removing the metal strip and tabs. Removing the metal strip and tabs can separate the positive and negative busbars and contact fingers.