Abstract: A method, system, and computer program product for implementing automated pressure level detection and correction is provided. The method includes retrieving from sensors, measurement attributes associated with geological conditions occurring during a mining process. Subsequently, threshold levels configured to activate an alarm associated with measurement attributes exceeding the threshold levels are determined and code is executed with respect to the threshold levels. A combined threshold severity level associated with the safety threshold levels is determined and code is executed with respect to the safety threshold levels. A combined clustering level associated with the safety threshold levels is determined and a difference value between the combined threshold severity level and combined clustering level is generated.

Abstract: Sacrificial pillars for a semiconductor device assembly, and associated methods and systems are disclosed. In one embodiment, a region of a semiconductor die may be identified to include sacrificial pillars that are not connected to bond pads of the semiconductor die, in addition to live conductive pillars connected to the bond pads. The region with the sacrificial pillars, when disposed in proximity to the live conductive pillars, may prevent an areal density of the live conductive pillars from experiencing an abrupt change that may result in intolerable variations in heights of the live conductive pillars. As such, the sacrificial pillars may improve a coplanarity of the live conductive pillars by reducing variations in the heights of the live conductive pillars. Thereafter, the sacrificial pillars may be removed from the semiconductor die.

Abstract: A neural network receives mono-color pixels in a Bayer pattern from an image sensor and interpolates pixels to generate full-color RGB pixels while also enlightening the image for better detail. A Back-Projection (BP) layer is added to each contracting layer in a U-net convolution neural network where feature depth is increased as pixels are downsampled, while a BP channel shrink layer is added to each expansion layer where feature depth is reduced to upsample and increase pixel resolution. Convolution layers in the BP layer lighten and darken images to generate an error that is then lightened and added to a weighted lightened input. The neural network learns the best weightings to correct for noise and error in the lightening process in these BP layers. Noise is reduced further by repeating a convolution and leaky Rectified Linear Unit (lrelu) in series for the first convolution in the BP layer that performs lightening.

Abstract: A trigger discovery method includes: sending a wake-up discovery request to a network device, where the wake-up discovery request is used for requesting the network device to trigger a second terminal to start a discovery process, and there is a subscription binding relationship between the second terminal and the first terminal; and starting the discovery process in a case that a response message sent by the network device is received, where the response message is used for indicating that the second terminal has started the discovery process.

Abstract: The present disclosure provides a path selection method, a terminal, and a network-side device. The method is applied to a terminal side and includes: transmitting a path selection request to a network-side device; receiving a response message transmitted by the network-side device; and in a case that the response message includes relay path indication information, using a target relay node to perform first transmission, where the relay path indication information includes identification information of a target relay node or configuration information of a candidate relay node, and the target relay node is a relay node, in the candidate relay node, whose configuration information matches a transmission parameter of the first transmission.

Abstract: Implementations described herein provide a method of forming a semiconductor device. The method includes forming a nanostructure having a first set of layers of a first material and a second set of layers, alternating with the first set of layers, having a second material. The method further includes depositing a hard mask on a top layer of the first set of layers, the hard mask including a first hard mask layer on the top layer of the first set of layers and a second hard mask layer on the first hard mask layer. The method also includes depositing elements of a cladding structure on sidewalls of the nanostructure and the hard mask. The method further includes removing a top portion of the cladding structure. The method further includes removing the second hard mask layer after removing the top portion of the cladding structure.

Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first interconnect layer including first interconnects is formed above a first substrate. A first bonding layer including first bonding contacts is formed above the first interconnect layer, such that each first interconnect is in contact with a respective first bonding contact. A second interconnect layer including second interconnects is formed above a second substrate. A second bonding layer including second bonding contacts is formed above the second interconnect layer, such that at least one second bonding contact is in contact with a respective second interconnect, and at least another second bonding contact is separated from the second interconnects. The first and second substrates are bonded in a face-to-face manner, such that each first bonding contact is in contact with one second bonding contact at a bonding interface.

Abstract: A method for ensuring safety of humans within operating area or in close proximity to an automatic apparatus is applied in and by a control apparatus. The control apparatus is coupled to one or more cameras arranged around the operating area of the automatic apparatus. The control apparatus uses deep learning techniques to analyze images captured by the cameras to determine whether there is a person in the operating area and powers off the automatic apparatus if any person is deemed present.

Abstract: Updating a user social network profile of a user based on relevant activities posted by other users in a same social network.

Abstract: An auxiliary Bluetooth circuit of a multi-member Bluetooth device for communicating data with a source Bluetooth device acting as a master in a first piconet. A main Bluetooth circuit of the multi-member Bluetooth device acts as a slave in the first piconet, acts as a master in a second piconet, and generates a first slave clock and a second main clock according to a first main clock generated by the source Bluetooth device, with which both the first slave clock and the second main clock are synchronized. The auxiliary Bluetooth circuit acts as a slave in the second piconet and generates a second slave clock and a third slave clock according to the second main clock, with which both the second slave clock and the third slave clock are synchronized. The auxiliary Bluetooth circuit sniffs Bluetooth packets transmitted through the first piconet from the source Bluetooth device.

Abstract: A depth processor including a region of interest determination circuit and a depth decoder is provided. The region of interest determination circuit is configured to determine a region of interest of an input image. The depth decoder is coupled to the region of interest determination circuit and configured to generate a depth map of the region of interest of the input image.

Abstract: A multi-member Bluetooth device for communicating data with a source Bluetooth device, wherein the source Bluetooth device acts as a master in a first piconet. The multi-member Bluetooth device includes a main Bluetooth circuit and an auxiliary Bluetooth circuit. The main Bluetooth circuit acts as a slave in the first piconet, and acts as a master in a second piconet. The auxiliary Bluetooth circuit acts as a slave in the second piconet. The main Bluetooth circuit generates a first slave clock and a second main clock synchronized with a first main clock generated by the source Bluetooth device, and samples a first audio data to be playback. The auxiliary Bluetooth circuit generates a second slave clock and a third slave clock synchronized with the second main clock, and samples a second audio data to be playback.

Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

Abstract: A mobile terminal and a method for expanding a bandwidth of a B41 frequency band in LTE are disclosed. The mobile includes a multimode multiband power amplifier, a duplexer, a first surface acoustic wave (SAW) filter, a selection module, and a radio frequency transmission module. When the multimode multiband power amplifier identifies that the initial signal is a signal in the B41 frequency band, the multimode multiband power amplifier determines a frequency band range of the signal in the B41 frequency band and outputs a transmitting signal in the B41 frequency band.

Abstract: The present disclosure provides a photomask, including a plurality of pattern areas, each of the pattern areas is defined by a respective boundary, a first pattern area including a first mask feature, and a training area adjacent to a boundary of the pattern area, the training area comprising a first training feature, wherein the first training feature is comparable to the first mask feature.

Abstract: A semiconductor device includes a substrate having thereon at least one active area and at least one trench isolation region adjacent to the at least one active area. A charge trapping structure is disposed on the at least one active area and at least one trench isolation region. At least one divot is disposed in the at least one trench isolation region adjacent to the charge trapping structure. A silicon oxide layer is disposed in the at least one divot. A gate oxide layer is disposed on the at least one active area around the charge trapping structure.

Abstract: An opening is formed within a dielectric material overlying a semiconductor substrate. The opening may comprise a via portion and a trench portion. During the manufacturing process a treatment chemical is placed into contact with the exposed surfaces in order to release charges that have built up on the surfaces. By releasing the charges, a surface change potential difference is reduced, helping to prevent galvanic corrosion from occurring during further manufacturing.

Abstract: A method of fabricating (a distributed write driving arrangement for a semiconductor memory device) includes: forming bit cells and a local write driver in a first device layer; forming a local write bit (LWB) line and a local write bit_bar (LWB_bar) line in a first metallization layer; connecting each of the bit cells correspondingly between the LWB and LWB_bar lines; connecting the local write driver to the LWB line and the LWB_bar line; forming a global write bit (GWB) line and a global write bit_bar (GWBL_bar) line in a second metallization layer; connecting the GWB line to the LWB line; connecting the GWB line and the GWBL_bar line to the corresponding LWB line and LWB_bar line; forming a global write driver in a second device layer; and connecting the global write driver to the GWB line and the GWBL_bar line.

Abstract: Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.