Abstract: Disclosed herein, the parental antibodies from the hybridomas YTS 169.4.2.1 (YTS169) and 2.43 were engineered into minibody and diabody fragments. Both the YTS and 2.43 antibodies bind mCD8+. However, they differ in that the YTS 169 antibodies bind both Lyt2.1 and Lyt2.2 while the 2.43 antibodies bind an epitope that is Lyt2.2 specific. These novel minibodies and diabodies retained their antigen specificity as shown by flow cytometry and ImmunoPET imaging. Most importantly, both the 2.43 and YTS169 minibodies and diabodies produced high contrast ImmunoPET images of CD8+ lymphoid organs at only four hours post-injection.

Abstract: The present invention relates to a blood pressure reducing composition and primers for Monascus purpureus NTU 568, wherein the composition is a red mold dioscorea (RMD) manufacturing by way of inoculating a Monascus purpureus NTU 568 to a dioscorea substrate and then treating the inoculated dioscorea with culturing and drying processes. This composition is able to reduce blood pressure and prevent the vascular wall from pathological deterioration; therefore, the composition can be applied to clinical treatment and health food. Moreover, at least one nucleotide sequence for M. purpureus NTU 568 and the primers for the nucleotide sequence are also provided in the present invention in order to facilitate the person skilled in Monascus purpureus related art capable of accomplishing the strain (mutant) identification of the M. purpureus NTU 568.

Abstract: Polynucleotides useful for improvement of plants are provided. In particular, polynucleotide sequences are provided from plant sources. Polypeptides encoded by the polynucleotide sequences are also provided. The disclosed polynucleotides and polypeptides find use in production of transgenic plants to produce plants having improved properties.

Abstract: The present invention discloses a submarine topography six-dimensional grid mapping method, and particularly to a method based on known discrete bathymetric data points. According to the present invention, a submarine topography six-dimensional grid mapping method including X-coordinate, Y-coordinate, water depth, slope, second derivative and measuring time is established, a submarine topography three-dimensional grid on the basis of discrete water depth data and measuring time is formed, and then submarine slope and second derivative of each grid point are calculated and the measuring time is superposed simultaneously, thus forming a submarine topography six-dimensional grid technical method. The present invention comprises a plurality of steps: establishing a submarine topography six-dimensional grid structure and a topography dimension grid, establishing a time dimension grid, establishing a slope dimension grid, and establishing a second derivative dimension grid.

Abstract: A family of carboxylic acid groups containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. Triethyleneoxide side chains provide improved adhesion to materials such as, graphite, silicon, silicon alloy, tin, tin alloy. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a first gate structure and a second gate structure over a substrate. The first and second gate structures each include a high-k dielectric layer located over the substrate, a capping layer located over the high-k dielectric layer, an N-type work function metal layer located over the capping layer, and a polysilicon layer located over the N-type work function metal layer. The method includes forming an inter-layer dielectric (ILD) layer over the substrate, the first gate structure, and the second gate structure. The method includes polishing the ILD layer until a surface of the ILD layer is substantially co-planar with surfaces of the first gate structure and the second gate structure. The method includes replacing portions of the second gate structure with a metal gate. A silicidation process is then performed to the semiconductor device.

Abstract: A semiconductor device is disclosed. The device includes a substrate, a first dielectric layer disposed over the substrate and a metal structure disposed in the first dielectric layer and below a surface of the first dielectric layer. The metal structure has a such shape that having an upper portion with a first width and a lower portion with a second width. The second width is substantially larger than the first width. The semiconductor device also includes a sub-structure of a second dielectric positioned between the upper portion of the metal structure and the first dielectric layer.

Abstract: A metal silicide thin film and ultra-shallow junctions and methods of making are disclosed. In the present disclosure, by using a metal and semiconductor dopant mixture as a target, a mixture film is formed on a semiconductor substrate using a physical vapor deposition (PVD) process. The mixture film is removed afterwards by wet etching, which is followed by annealing to form metal silicide thin film and ultra-shallow junctions. Because the metal and semiconductor dopant mixture is used as a target to deposit the mixture film, and the mixture film is removed by wet etching before annealing, self-limiting, ultra-thin, and uniform metal silicide film and ultra-shallow junctions are formed concurrently in semiconductor field-effect transistor fabrication processes, which are suitable for field-effect transistors at the 14 nm, 11 nm, or even further technology node.

Abstract: An aluminum (Al) layer is formed over a semiconductor substrate. A selective portion of the Al layer is removed to form openings. The Al layer is anodized to obtain an alumina dielectric layer with a plurality of pores substantially perpendicular to a surface of the semiconductor substrate. The openings are filled with a conductive interconnect material. The pores are widened to form air gaps and a top etch stop layer is formed over the alumina dielectric layer.

Abstract: A method and device of the power saving for transmitting a signal is provided. The method comprises the steps of: transmitting a test signal with a first test amplitude from a local terminal, wherein the first test amplitude is selected from a plurality of preset amplitudes; acknowledging that the test signal with the first test amplitude has been received by a remote terminal if an acknowledgement signal is transmitted from the remote terminal for a response to the test signal; and transmitting a data signal having a data amplitude based on the first test amplitude. The device can transmit the data signal with a small data signal amplitude by the method to achieve the saving power.

Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

Abstract: A multi-band multi-antenna system and a communication device thereof are provided. The multi-band multi-antenna system includes at least one ground, two antenna units, a coupling conductor line and a grounding conductor line. Both of the two antenna units have at least one conductor portion, a low-pass filtering portion and an extending conductor portion. Each antenna unit generates at least one higher and lower operating bands. The low-pass filtering portion is electrically coupled between the conductor portion and the extending conductor portion, and effectively decreases dependent relationship between the higher and lower operating bands. The coupling conductor line is disposed nearby the two antenna units and has a first coupling portion and a second coupling portion. The grounding conductor line is disposed between the two antenna units and connected to the ground.

Abstract: A light emitting diode (LED) package including a substrate unit, a light emitting unit and an encapsulant. The substrate unit includes a metal substrate and a circuit board. The metal substrate has a first carrier portion and a second carrier portion. The second carrier portion is projected from the first carrier portion. The first carrier portion has a first carrier face. The second carrier portion has a second carrier face located higher than the first carrier face. The circuit board is disposed on the first carrier face, and the second carrier portion passes through the circuit board. The light emitting unit includes at least one LED chip disposed on the second carrier face of the second carrier portion, and the LED chip electrically connected to the circuit board. The encapsulant encapsulates the LED chip.

Abstract: In an electric actuator (100), a fast releasing mechanism (30) includes a rotary base (31), a coupling ring (32), a sleeve (34), and a clutch device (36). The coupling ring (32) rotates with the rotary base (31). Locking slots (322) are disposed on the coupling ring (32). The rotary base (31) can rotate with respect to the sleeve (34). Chain slots (343) communicating with the locking slots (322) are disposed on the sleeve (34). The clutch device (36) is correspondingly sleeved around the sleeve (34). Raised ribs (361) slidably connected to the locking slots (322) and the chain slots (343) are disposed on the clutch device (36). The sleeve (34) can be selected to move together with or move separately with the rotary base (31) by means of the axial movement of the clutch device (36).

Abstract: Methods and compositions relating to TIC10 are described according to aspects of the present invention. The compositions and methods have utility in treating disease, particularly cancer in a subject in need thereof, including a human subject as well as subjects of other species. The compositions have utility in treating brain cancer in a subject in need thereof.

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a metal gate stack formed on the semiconductor substrate, and the metal gate stack includes a metal gate electrode. The semiconductor device also includes a metal oxide layer formed over the metal gate stack and in direct contact with the metal gate electrode, and a thickness of the metal oxide layer is in a range from about 15 ? to about 40 ?. The metal oxide layer has a first portion made of an oxidized material of the metal gate electrode and has a second portion made of a material different from that of the first portion.

Abstract: A multi-band antenna includes a base portion, a high-frequency radiating portion, a feeding portion and a low-frequency radiating portion. The base portion has a first transverse edge and a second transverse edge parallel to and opposite to the first transverse edge. The high-frequency radiating portion includes an inductance portion, a first extending portion, a second extending portion and a third extending portion. One side of a bottom of the feeding portion defines a feeding point. The low-frequency radiating portion has a bending portion, a coupling portion and an auxiliary portion. The base portion, the high-frequency radiating portion, the coupling portion and the auxiliary portion are coplanar. The base portion, the high-frequency radiating portion, the coupling portion and the auxiliary portion together with the bending portion are located in two perpendicular planes.