Abstract: A soft collision grating scale and measuring method thereof comprises a fixed scale, a sliding auxiliary scale slidably disposed relative to the fixed scale, and a moving pin sliding relative to the sliding auxiliary scale. The moving pin and the sliding auxiliary scale move synchronically. A buffering mechanism is disposed on the moving pin. When the moving pin sliding relative to the sliding auxiliary scale cooperates with a buffering force of the buffering mechanism, a collision between the moving pin and stopping faces of an inspected target is automatically offset to attain a soft collision effect, which prevents the moving pin from breaking to keep an normal measurement operation and increases the precision of measurement by the fact that the sliding auxiliary scale does not rebound and an offset distance caused by reversely moving the moving pin relative to the sliding auxiliary scale can be computed.

Abstract: A method for manufacturing a light-emitting device, comprises steps of: providing an as-cut wafer having an irregularly uneven surface comprising surface roughness greater than 0.5 ?m; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer.

Abstract: A method, computer program product, and an apparatus for a transmit priority distributed backoff are provided. The apparatus forms a peer-to-peer communication link with a second apparatus. In addition, the apparatus determines whether to transmit in an assigned resource for securing a transmit priority for transfer of data to the second apparatus based on a quality of service estimation. Furthermore, the apparatus transmits to the second apparatus based on the determination. A method, computer program product, and an apparatus for a transmit priority token passing are provided. The apparatus forms a peer-to-peer communication link with a second apparatus. In addition, the apparatus determines a transmit priority within the link based on a quality of service estimation. The transmit priority is a priority of transmission between the apparatus and the second apparatus in the link.

Abstract: A system and method for making semiconductor die connections with through-substrate vias are disclosed. Through substrate vias are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment the substrate has an interior region and a periphery region surrounding the interior region. A first set of through substrate vias are located within the periphery region, and a second set of through substrate vias are located within the interior region, wherein the second set of through substrate vias are part of a power matrix. The second set of through substrate vias bisect the substrate into a first part and a second part.

Abstract: A system and method for photoresists is provided. In an embodiment a photoresist is developed. Once developed, the photoresist is slimmed using either a direct slimming technique or an indirect slimming technique. In a direct slimming technique the slimming agent is either an alkaline solution or a polar solvent. In the indirect slimming technique a hydrophobic material is diffused into the photoresist to form a modified region and the modified region is then removed.

Abstract: A rotary paddle level switch has a housing, a driving unit, two switches, a resilient member, a clutch, a transmission shaft, and a propeller. A resilient clip of the clutch holds a non-circular actuation section of the transmission shaft. When the driving unit drives the clutch to rotate, the transmission shaft and the propeller are driven by the clutch. When the propeller is rapidly rotated by suddenly exerting an excessively large external force thereon, as the resilient clip holds the transmission shaft by elastic force, the fast rotating transmission shaft removes itself from the holding of the resilient clip and is rotated without driving the resilient clip to rotate, thereby avoiding the transmission of the external force and damage to the driving unit. As the clutch just needs a clutch stand and a resilient clip to achieve the foregoing function, the level switch is structurally simple and relatively inexpensive.

Abstract: The present disclosure discloses a method of fabricating a semiconductor device. A fin structure is formed over a substrate. The fin structure contains a semiconductor material. A first implantation process is performed to a region of the fin structure to form a fin seed within the region of the fin structure. The fin seed has a crystal structure. The first implantation process is performed at a process temperature above about 100 degrees Celsius. A second implantation process is performed to the region of the fin structure to cause the region of the fin structure outside the fin seed to become amorphous. The second implantation process is performed at a process temperature below about 0 degrees Celsius. Thereafter, an annealing process is performed to recrystallize the region of the fin structure via the fin seed.

Abstract: Semiconductor structures are presented. An exemplary semiconductor structure comprises a common source region having a sawtooth profile, and a flat erase gate disposed above the common source region. Methods of making semiconductor structures are also presented. An exemplary method comprises forming a plurality of trenches in a substrate thereby forming a plurality of active regions; forming a common source region in the substrate in a direction perpendicular to the active regions. The exemplary method further comprises, after forming the common source region, forming a dielectric feature on the substrate thereby filling the trenches and forming a plurality of shallow trench isolation features, and forming an erase gate on the dielectric feature.

Abstract: An apparatus includes a body and a surface for receiving a semiconductor wafer carrier is provided. A nozzle and a venting hole are provided on the surface. The semiconductor wafer carrier has at least one selectively closable capped opening at a bottom, top and/or side surface thereof. The capped opening is configured to couple to, and be accessible by, the nozzle and receive gas output from the nozzle so as to create a substantially oxygen free environment within the semiconductor wafer carrier. The vent hole is configured to allow gas to flow out of the semiconductor wafer carrier. In addition, the apparatus includes a sensor and a controller. The sensor is configured to monitor an ambient condition in the semiconductor wafer carrier, and the controller is configured to adjust a control valve based on the ambient condition so as to control the gas flow or output from the nozzle.

Abstract: A cable end connector includes an insulative body, a number of terminals received in the insulative body, a spacer mounted behind the insulative body, and an insulative housing molded to enclose the inuslative body and the spacer. The spacer includes an intermediate chamfer at a mounting end thereof to prevent interference during mounting of the spacer to the insulative body. A stopping wall is disposed at two opposite sides of the chamfer to prevent molten plastics from flowing into the insulative body during molding the insulative housing.

Abstract: The present invention is directed to cyclopropylamine derivatives which are LSD1 inhibitors useful in the treatment of diseases such as cancer.

Abstract: The invention relates to a device for detecting the thickness and crown of plates and strips, belonging to the field of nuclear technology applications. The device comprises a C-frame; two ray source mounted in an upper arm of the C-frame and distributed at an interval along the width direction of a steel plate/strip; two rows of gas-pressurized ionization chamber detector arrays mounted in a lower arm of the C-frame and distributed at an interval along the moving direction of the plate/strip; collimators mounted below the two ray source, the collimators enabling the rays of each ray source to only irradiate to a corresponding row of detectors; pre-amplifier modules connected with the detector arrays; a data collector connected with the pre-amplifier modules; a data processing and displaying computer connected with the data collector; and a cooling water and pressurized air service system and a control system for ensuring system operation and monitoring.

Abstract: A display panel including a first pixel array, a second pixel array and a display medium therebetween is provided. The first pixel array includes a plurality of first pixel sets, and the second pixel array includes a plurality of second pixel sets. The second pixel array is disposed overlapping the first pixel array, and the display medium is disposed between the first pixel array and the second pixel array. A display unit set is constituted by each of the first pixel sets, one of the second pixel sets disposed overlapping the each of the first pixel sets and the display medium disposed between the first pixel set and the second pixel set, and the display unit set includes a plurality of display units.

Abstract: Embodiments of the present application provide a method of handover in device to device communication, a base station and a communication system. The method of handover includes: transmitting, by a source base station, a handover request for handing over UE, the handover request comprising information indicating the UE to perform D2D communication with paired UE; receiving a response of the handover request transmitted by one or more base stations, and selecting one of the base stations as a target base station; and handing over the UE to the target base station according to the response of the handover request transmitted the target base station. With the embodiments of the present application, the UE and the paired UE may be made to proceed with performing D2D communication in the target base station, thereby further saving signaling overhead, and reducing waste of resources.

Abstract: The technology described herein relates to methods of prognosing and treating bladder cancer.

Abstract: A whipsaw for carrying a wafer in wafer cleaning is disclosed. The whipsaw may include a cleaning tank, an annular groove around a peripheral of the cleaning tank, a discharge chute disposed between the cleaning tank and the annular groove, at least one first flow channel communicative of the cleaning tank and the discharge chute, and at least one second flow channel communicative of the annular groove and the discharge chute. When the wafer with a tape is placed in the whipsaw, the wafer may correspond to the cleaning tank, and a portion of the tape unmasked by the wafer may correspond to the annular groove. The first flow channel provides a first fluid into the cleaning tank with the first fluid cleaning the wafer, and the second flow channel provides a second fluid into the annular groove with the second fluid isolating the first fluid from the tape.

Abstract: A communication device of a mobile terminal and a mobile terminal are provided. The communication device includes a communication module mainboard that has a communication module disposed thereon; a main antenna that is coupled to the communication module mainboard; a MIMO antenna capable of enhancing signals; and a MIMO board coupled to the communication module mainboard via a spring contact plate; and the MIMO antenna is coupled to the MIMO board via a coaxial cable. Since the main antenna and the MIMO antenna are separately disposed, their interference can be reduced, and the overlapping disposal of the main antenna and the MIMO antenna can be avoided, and the thickness of the mobile terminal can be reduced. The MIMO antenna is coupled to the communication module via the coaxial cable, so the MIMO antenna can be freely adjusted and disposed anywhere within the mobile terminal.

Abstract: According to an example, an Edge Virtual Bridging (EVB) station is configured with a VM, an ER and multiple physical network cards. The VM is configured with multiple virtual network cards and each virtual network card has one VSI. Each VSI is connected with one of the physical network cards via the ER. One of the physical network cards is configured as a primary physical network card, and another is configured as a secondary physical network card. A VSI corresponding to the primary physical network card is configured as a primary virtual interface, and a VSI corresponding to the secondary physical network card is configured as a secondary virtual interface. After determining the primary physical network card failed, the secondary physical network card is configured as a new primary physical network card, and the secondary virtual is configured as a new primary virtual interface.

Abstract: An apparatus comprising a memory and a controller. The memory is configured to process a plurality of read/write operations. The memory comprises a plurality of memory modules. Each memory module has a size less than a total size of the memory. The controller is configured to (i) classify data from multiple blocks of the memory as hot-read data or non hot-read data, (ii) aggregate the hot-read data to dedicated blocks, and (iii) select a type of error correcting code to protect the hot-read data in the dedicated blocks. The aggregation reduces an impact on endurance of the memory.

Abstract: A method of forming an integrated circuit device includes forming a conductive element over a substrate, wherein the conductive element is over an under bump metallurgy (UBM) layer, and the UBM layer comprises a first UBM layer and a second UBM layer over the first UBM layer. The method further includes etching the second UBM layer to expose a portion of the first UBM layer beyond a periphery of the conductive element. The method further includes forming a protection layer over sidewalls of the conductive element, over sidewalls of the second UBM layer and over a top surface of the first UBM layer. The method further includes etching the first UBM layer to remove a portion of the first UBM layer. The method further includes forming a cap layer over a top surface of the conductive element.