Patents by Inventor Ana Villamor

Ana Villamor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10090380
    Abstract: In one embodiment, a semiconductor substrate is provided having a localized superjunction structure extending from a major surface. A doped region is then formed adjacent the localized superjunction structure to create a charge imbalance therein. In one embodiment, the doped region can be an ion implanted region formed within the localized superjunction structure. In another embodiment, the doped region can be an epitaxial layer having a graded dopant profile adjoining the localized superjunction structure. The charge imbalance can improve, among other things, unclamped inductive switching (UIS) performance.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: October 2, 2018
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Peter Moens, Ana Villamor, Piet Vanmeerbeek, Jaume Roig-Guitart, Filip Bogman
  • Publication number: 20160148997
    Abstract: In one embodiment, a semiconductor substrate is provided having a localized superjunction structure extending from a major surface. A doped region is then formed adjacent the localized superjunction structure to create a charge imbalance therein. In one embodiment, the doped region can be an ion implanted region formed within the localized superjunction structure. In another embodiment, the doped region can be an epitaxial layer having a graded dopant profile adjoining the localized superjunction structure. The charge imbalance can improve, among other things, unclamped inductive switching (UIS) performance.
    Type: Application
    Filed: January 28, 2016
    Publication date: May 26, 2016
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Peter MOENS, Ana VILLAMOR, Piet VANMEERBEEK, Jaume ROIG-GUITART, Filip BOGMAN
  • Patent number: 9287371
    Abstract: In one embodiment, a semiconductor substrate is provided having a localized superjunction structure extending from a major surface. A doped region is then formed adjacent the localized superjunction structure to create a charge imbalance therein. In one embodiment, the doped region can be an ion implanted region formed within the localized superjunction structure. In another embodiment, the doped region can be an epitaxial layer having a graded dopant profile adjoining the localized superjunction structure. The charge imbalance can improve, among other things, unclamped inductive switching (UIS) performance.
    Type: Grant
    Filed: September 20, 2013
    Date of Patent: March 15, 2016
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Peter Moens, Ana Villamor, Piet Vanmeerbeek, Jaume Roig-Guitart, Filip Bogman
  • Publication number: 20140097517
    Abstract: In one embodiment, a semiconductor substrate is provided having a localized superjunction structure extending from a major surface. A doped region is then formed adjacent the localized superjunction structure to create a charge imbalance therein. In one embodiment, the doped region can be an ion implanted region formed within the localized superjunction structure. In another embodiment, the doped region can be an epitaxial layer having a graded dopant profile adjoining the localized superjunction structure. The charge imbalance can improve, among other things, UIS performance.
    Type: Application
    Filed: September 20, 2013
    Publication date: April 10, 2014
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Peter Moens, Ana Villamor, Piet Vanmeerbeek, Jaume Roig-Guitart, Filip Bogman