Abstract: A method for making a semiconductor device is disclosed. In accordance with the method, a semiconductor structure is provided which includes (a) a substrate (203), (b) first and second gate electrodes (219) disposed over the substrate, each of the first and second gate electrodes having first and second sidewalls, and (c) first (223) and second (225) sets of spacer structures disposed adjacent to the first and second gate electrodes, respectively. A first layer of photoresist (231) is then disposed over the structure such that the first set of spacer structures is exposed and the second set of spacer structures is covered, after which the first set of spacer structures is partially etched.

Abstract: A method for making a semiconductor device is provided. In accordance with the method, a semiconductor structure is provided which comprises (a) a substrate (203), (b) first (219) and second (220) gate electrodes disposed over the substrate, and (c) first (223) and second (225) sets of spacer structures disposed adjacent to said first and second gate electrodes, respectively. A first layer of photoresist (231) is disposed over the structure such that the first set of spacer structures is exposed and the second set of spacer structures is covered. The structure is then subjected to an etch which etches the first layer of photoresist and a portion of the first and second sets of spacer structures.

Abstract: A method is provided for making a silicided gate (209). In accordance with the method, a semiconductor structure (201) is provided which comprises a semiconductor substrate (202), a gate (209) disposed on the semiconductor substrate, and a spacer (219) adjacent to the gate. The structure is subjected to a first etch which exposes a first lateral portion of the gate. An implant (215) is then created in a region adjacent to the spacer. The structure is then subjected to a second etch which exposes a second lateral portion of the gate electrode, and a layer of silicide (225) is formed which extends over the first and second lateral portions of the gate.

Abstract: A method for making a semiconductor device is provided. In accordance with the method, a semiconductor structure is provided which comprises (a) a substrate (203), (b) first (219) and second (220) gate electrodes disposed over the substrate, and (c) first (223) and second (225) sets of spacer structures disposed adjacent to said first and second gate electrodes, respectively. A first layer of photoresist (231) is disposed over the structure such that the first set of spacer structures is exposed and the second set of spacer structures is covered. The structure is then subjected to an etch which etches the first layer of photoresist and a portion of the first and second sets of spacer structures.

Abstract: A method for making a semiconductor device is provided herein. In accordance with the method, a semiconductor structure is provided which comprises a substrate (203), first and second gate electrodes (219) disposed over the substrate, each of said first and second gate electrodes having first and second sidewalls, and first (223) and second (225) sets of spacer structures disposed adjacent to said first and second gate electrodes, respectively. A first layer of photoresist (231) is then disposed over the structure such that the first set of spacer structures is exposed and the second set of spacer structures is covered, after which the first set of spacer structures is partially etched.

Abstract: A method is provided for making a silicided gate (209). In accordance with the method, a semiconductor structure (201) is provided which comprises a semiconductor substrate (202), a gate (209) disposed on the semiconductor substrate, and a spacer (219) adjacent to the gate. The structure is subjected to a first etch which exposes a first lateral portion of the gate. An implant (215) is then created in a region adjacent to the spacer. The structure is then subjected to a second etch which exposes a second lateral portion of the gate electrode, and a layer of silicide (225) is formed which extends over the first and second lateral portions of the gate.

Abstract: A method is provided for making a silicided gate (209). In accordance with the method, a semiconductor substrate (202) is provided which has a gate (209) disposed thereon and which has a spacer (219) disposed adjacent to the gate. The spacer is subjected to a recess etch which exposes a lateral portion of the gate. An implant region (215) is then created adjacent to the spacer, and a layer of silicide (225) is formed which extends over the exposed lateral portion of the gate.