Patents by Inventor Anagnostis Tsiatmas

Anagnostis Tsiatmas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220155694
    Abstract: A method, computer program and associated apparatuses for metrology. The method includes determining whether a substrate or substrate portion is subject to a process effect. The method includes: obtaining inspection data including a plurality of sets of measurement data associated with a structure on the substrate or portion thereof (for example measurement pupils); and obtaining fingerprint data describing a spatial variation of a parameter of interest. An iterative mapping of the inspection data to the fingerprint data is performed. Whether the structure is subject to a process effect is based on a degree to which the iterative mapping converges on a solution.
    Type: Application
    Filed: February 17, 2020
    Publication date: May 19, 2022
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Paul Jonathan TURNER, Anagnostis TSIATMAS
  • Publication number: 20220082944
    Abstract: A method to calculate a model of a metrology process including receiving a multitude of SEM measurements of a parameter of a semiconductor process, receiving a multitude of optical measurements of the parameter of a semiconductor process, determining a model of a metrology process wherein the optical measurements of the parameter of semiconductor process are mapped to the SEM measurements of the parameter of the semiconductor process using a regression algorithm.
    Type: Application
    Filed: December 11, 2019
    Publication date: March 17, 2022
    Applicant: ASML Netherlands B.V.
    Inventors: Samee Ur REHMAN, Anagnostis TSIATMAS, Sergey TARABRIN, Elliott Gerard MC NAMARA, Paul Christiaan HINNEN
  • Publication number: 20220066330
    Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
    Type: Application
    Filed: October 8, 2021
    Publication date: March 3, 2022
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Anagnostis TSIATMAS, Paul Christiaan Hinnen, Elliott Gerard Mc Namara, Thomas Theeuwes, Maria Isabel De La Fuente Valentin, Mir Homayoun Shahrjerdy, Arie Jeffrey Den Boef, Shu-jin Wang
  • Publication number: 20210384086
    Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
    Type: Application
    Filed: August 20, 2021
    Publication date: December 9, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard MC NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
  • Publication number: 20210335678
    Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
    Type: Application
    Filed: July 9, 2021
    Publication date: October 28, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard Mc NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
  • Patent number: 11145557
    Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: October 12, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
  • Patent number: 11143972
    Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: October 12, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Thomas Theeuwes, Maria Isabel De La Fuente Valentin, Mir Homayoun Shahrjerdy, Arie Jeffrey Den Boef, Shu-jin Wang
  • Patent number: 11101184
    Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: August 24, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
  • Patent number: 11101185
    Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: August 24, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
  • Publication number: 20210255552
    Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
    Type: Application
    Filed: April 27, 2021
    Publication date: August 19, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Joannes Jitse VENSELAAR, Anagnostis TSIATMAS, Samee Ur REHMAN, Paul Christiaan HINNEN, Jean-Pierre Agnes Henricus Marie VAESSEN, Nicolas Mauricio WEISS, Gonzalo Roberto SANGUINETTI, Thomai ZACHAROPOULOU, Martijn Maria ZAAL
  • Patent number: 11092900
    Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: August 17, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Youping Zhang, Hendrik Jan Hidde Smilde, Anagnostis Tsiatmas, Adriaan Johan Van Leest, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Paul Christiaan Hinnen
  • Patent number: 11022897
    Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: June 1, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Joannes Jitse Venselaar, Anagnostis Tsiatmas, Samee Ur Rehman, Paul Christiaan Hinnen, Jean-Pierre Agnes Henricus Marie Vaessen, Nicolas Mauricio Weiss, Gonzalo Roberto Sanguinetti, Thomai Zacharopoulou, Martijn Maria Zaal
  • Patent number: 10983445
    Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: April 20, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Nitesh Pandey, Zili Zhou, Gerbrand Van Der Zouw, Arie Jeffrey Den Boef, Markus Gerardus Martinus Maria Van Kraaij, Armand Eugene Albert Koolen, Hugo Augustinus Joseph Cramer, Paul Christiaan Hinnen, Martinus Hubertus Maria Van Weert, Anagnostis Tsiatmas, Shu-jin Wang, Bastiaan Onne Fagginger Auer, Alok Verma
  • Publication number: 20210035871
    Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
    Type: Application
    Filed: October 16, 2020
    Publication date: February 4, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard Mc NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER, Maria Isabel DE LA FUENTE VALENTIN, Koen VAN WITTEVEEN, Martijn Maria ZAAL, Shu-jin WANG
  • Patent number: 10871367
    Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.
    Type: Grant
    Filed: May 26, 2020
    Date of Patent: December 22, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Alok Verma, Hugo Augustinus Joseph Cramer, Thomas Theeuwes, Anagnostis Tsiatmas, Bert Verstraeten
  • Patent number: 10811323
    Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: October 20, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Maria Isabel De La Fuente Valentin, Koen Van Witteveen, Martijn Maria Zaal, Shu-jin Wang
  • Patent number: 10795269
    Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 6, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Zili Zhou, Gerbrand Van Der Zouw, Nitesh Pandey, Markus Gerardus Martinus Maria Van Kraaij, Martinus Hubertus Maria Van Weert, Anagnostis Tsiatmas, Sergey Tarabrin, Hilko Dirk Bos
  • Patent number: 10782617
    Abstract: A method, including: measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: September 22, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Anagnostis Tsiatmas, Elliott Gerard McNamara
  • Publication number: 20200284578
    Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.
    Type: Application
    Filed: May 26, 2020
    Publication date: September 10, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Alok VERMA, Hugo Augustinus Joseph CRAMER, Thomas THEEUWES, Anagnostis TSIATMAS, Bert VERSTRAETEN
  • Patent number: 10747122
    Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method includes measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target has a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation includes at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: August 18, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Anagnostis Tsiatmas, Alok Verma, Bert Verstraeten