Patents by Inventor Anagnostis Tsiatmas

Anagnostis Tsiatmas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10811323
    Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: October 20, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Maria Isabel De La Fuente Valentin, Koen Van Witteveen, Martijn Maria Zaal, Shu-jin Wang
  • Patent number: 10795269
    Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 6, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Zili Zhou, Gerbrand Van Der Zouw, Nitesh Pandey, Markus Gerardus Martinus Maria Van Kraaij, Martinus Hubertus Maria Van Weert, Anagnostis Tsiatmas, Sergey Tarabrin, Hilko Dirk Bos
  • Patent number: 10782617
    Abstract: A method, including: measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: September 22, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Anagnostis Tsiatmas, Elliott Gerard McNamara
  • Publication number: 20200284578
    Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.
    Type: Application
    Filed: May 26, 2020
    Publication date: September 10, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Alok VERMA, Hugo Augustinus Joseph CRAMER, Thomas THEEUWES, Anagnostis TSIATMAS, Bert VERSTRAETEN
  • Patent number: 10747122
    Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method includes measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target has a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation includes at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: August 18, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Anagnostis Tsiatmas, Alok Verma, Bert Verstraeten
  • Publication number: 20200185281
    Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
    Type: Application
    Filed: February 14, 2020
    Publication date: June 11, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard MC NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
  • Patent number: 10677589
    Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: June 9, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Alok Verma, Hugo Augustinus Joseph Cramer, Thomas Theeuwes, Anagnostis Tsiatmas, Bert Verstraeten
  • Publication number: 20200126872
    Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard MC NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
  • Patent number: 10615084
    Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: April 7, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
  • Patent number: 10585354
    Abstract: Methods of optimizing a metrology process are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a first target on a substrate are obtained. Each application of the metrology process includes illuminating the first target with a radiation spot and detecting radiation redirected by the first target. The applications of the metrology process include applications at a) plural positions of the radiation spot relative to the first target, and/or b) plural focus heights of the radiation spot. The measurement data includes, for each application of the metrology process, a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal alignment and/or an optimal focus height based on comparisons between the detected pupil representations in the measurement data and a reference pupil representation.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: March 10, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Anagnostis Tsiatmas, Joannes Jitse Venselaar, Samee Ur Rehman, Mariya Vyacheslavivna Medvedyeva, Bastiaan Onne Fagginger Auer, Martijn Maria Zaal, Thaleia Kontoroupi
  • Patent number: 10585048
    Abstract: Methods of determining a value of a parameter of interest are disclosed. In one arrangement, a symmetric component and an asymmetric component of a detected pupil representation from illuminating a target are derived. A first metric characterizing the symmetric component and a second metric characterizing the asymmetric component vary non-monotonically as a function of the parameter of interest over a reference range of values of the parameter of interest. A combination of the derived symmetric component and the derived asymmetric component are used to identify a correct value from a plurality of candidate values of the parameter of interest.
    Type: Grant
    Filed: April 16, 2019
    Date of Patent: March 10, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Samee Ur Rehman, Anagnostis Tsiatmas, Sergey Tarabrin, Joannes Jitse Venselaar, Alexandru Onose, Mariya Vyacheslavivna Medvedyeva
  • Publication number: 20200073254
    Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount.
    Type: Application
    Filed: November 6, 2019
    Publication date: March 5, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Maurits VAN DER SCHAAR, Youping ZHANG, Hendrik Jan Hidde SMILDE, Anagnostis TSIATMAS, Adriaan Johan VAN LEEST, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER, Paul Christiaan HINNEN
  • Patent number: 10571363
    Abstract: Methods of determining an optimal focus height are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a target are obtained. Each application of the metrology process includes illuminating the target with a radiation spot and detecting radiation redirected by the target. The applications of the metrology process include applications at different nominal focus heights. The measurement data includes, for each application of the metrology process, at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal focus height for the metrology process using the obtained measurement data.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: February 25, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Mariya Vyacheslavivna Medvedyeva, Anagnostis Tsiatmas, Hugo Augustinus Joseph Cramer, Martinus Hubertus Maria Van Weert, Bastiaan Onne Fagginger Auer, Xiaoxin Shang, Johan Maria Van Boxmeer, Bert Verstraeten
  • Patent number: 10546790
    Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: January 28, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
  • Publication number: 20200013685
    Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
    Type: Application
    Filed: September 17, 2019
    Publication date: January 9, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMA, Paul Christiaan HINNEN, Elliott Gerard McNAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
  • Patent number: 10488768
    Abstract: A target formed on a substrate, the target having: an alignment structure; and a metrology structure; wherein the alignment structure comprises structures that are arranged to generate a beat pattern when the alignment structure is illuminated with source radiation. Advantageously, when the target is illuminated, the beat pattern that appears in an image of the target allows the target to be easily identified using a pattern recognition technique.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: November 26, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Bastiaan Onne Fagginger Auer, Paul Christiaan Hinnen, Hugo Augustinus Joseph Cramer, Anagnostis Tsiatmas, Mariya Vyacheslavivna Medvedyeva
  • Publication number: 20190354024
    Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method includes measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target has a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation includes at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.
    Type: Application
    Filed: October 31, 2017
    Publication date: November 21, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Anagnostis TSIATMAS, Alok VERMA, Bert VERSTRAETEN
  • Patent number: 10481503
    Abstract: A substrate has first and second target structures formed by a lithographic process. Each target structure has a two-dimensional periodic structure formed in a single layer using first and second lithographic steps. The first target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a first bias amount. The second target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a second bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained. A measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: November 19, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Youping Zhang, Hendrik Jan Hidde Smilde, Anagnostis Tsiatmas, Adriaan Johan Van Leest, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Paul Christiaan Hinnen
  • Publication number: 20190323972
    Abstract: Methods of determining a value of a parameter of interest are disclosed. In one arrangement, a symmetric component and an asymmetric component of a detected pupil representation from illuminating a target are derived. A first metric characterizing the symmetric component and a second metric characterizing the asymmetric component vary non-monotonically as a function of the parameter of interest over a reference range of values of the parameter of interest. A combination of the derived symmetric component and the derived asymmetric component are used to identify a correct value from a plurality of candidate values of the parameter of interest.
    Type: Application
    Filed: April 16, 2019
    Publication date: October 24, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Samee Ur REHMAN, Anagnostis TSIATMAS, Sergey TARABRIN, Joannes Jitse VENSELAAR, Alexandru ONOSE, Mariya Vyacheslavivna MEDVEDYEVA
  • Patent number: 10453758
    Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: October 22, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer