Patents by Inventor Anais LOUBAT

Anais LOUBAT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mask for protecting a semiconductor material for localized etching applications
    Patent number: 11043390
    Abstract: The invention relates to the chemical etching of a semiconductor material, including: deposition at least one mask (PLP) on a first surface zone of a semiconductor material (SC); and chemically etching (S31) a second surface zone of the semiconductor material (SC) that is not covered by the mask (PLP). In particular, the aforementioned mask is produced in a material including polyphosphazene, which material protects the underlying semiconductor especially well.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: June 22, 2021
    Assignee: Centre National De La Recherche Scientifique
    Inventors: Arnaud Etcheberry, Anne-Marie Goncalves, Jean-Luc Pelouard, Mathieu Fregnaux, Anais Loubat
  • Improved Mask For Protecting A Semiconductor Material For Localized Etching Applications
    Publication number: 20200211855
    Abstract: The invention relates to the chemical etching of a semiconductor material, including: deposition at least one mask (PLP) on a first surface zone of a semiconductor material (SC); and chemically etching (S31) a second surface zone of the semiconductor material (SC) that is not covered by the mask (PLP). In particular, the aforementioned mask is produced in a material including polyphosphazene, which material protects the underlying semiconductor especially well.
    Type: Application
    Filed: July 31, 2018
    Publication date: July 2, 2020
    Inventors: Arnaud ETCHEBERRY, Anne-Marie GONCALVES, Jean-Luc PELOUARD, Mathieu FREGNAUX, Anais LOUBAT