Abstract: In a general aspect, a semiconductor device assembly includes a substrate having a patterned metal layer, a first semiconductor die coupled with a first portion of the patterned metal layer, and a plurality of conductive terminals. At least one of the plurality of conductive terminals is coupled with a second portion of the patterned metal layer. The assembly also includes a die attach paddle coupled with a third portion of the patterned metal layer, and a second semiconductor die coupled with the die attach paddle. The assembly further includes a plurality of wire bonds respectively electrically coupling the second semiconductor die with a first conductive terminal of the plurality of conductive terminals, the second semiconductor die with the die attach paddle, the second semiconductor die with the first semiconductor die, and the first semiconductor die with a second conductive terminal of the plurality of conductive terminals.

Abstract: Described implementations provide an apparatus that includes a conductive portion of a package, including a die attach pad (DAP), a semiconductor die coupled to the DAP, and a direct bonded metal (DBM) substrate including at least a metal layer coupled to a dielectric layer, the semiconductor die and the DAP being included in a first vertical stack separated from a second vertical stack including the DBM substrate.

Abstract: Described implementations provide an apparatus that includes a direct bonded metal (DBM) substrate including at least a metal layer coupled to a dielectric layer, a semiconductor device coupled to the DBM substrate, a first protrusion associated with the metal layer, and a conductive portion of a package including a second protrusion that is configured to engage with the first protrusion.

Abstract: A substrate includes a base plate made of an insulating material, a first electrically conductive layer disposed on a first side of the base plate, and a second electrically conductive layer disposed on a second side of the base plate. The first electrically conductive layer has a stepped surface, the stepped surface including a plurality of steps at different heights above the base plate.

Abstract: In a general aspect, a semiconductor device package includes a ceramic substrate having a first surface and a second surface opposite the first surface, a first metal layer disposed on the first surface of the ceramic substrate, a second metal layer disposed on the second surface of the ceramic substrate, and a semiconductor die having a first surface and a second surface opposite the first surface. The first surface of the semiconductor die is coupled with the first metal layer via first sintering material. The semiconductor device package also includes a first signal lead coupled with the second surface of the semiconductor die via second sintering material, a second signal lead coupled with the second surface of the semiconductor die via third sintering material; and a third signal lead coupled with the first metal layer via a weld.

Abstract: A package includes a semiconductor die attached to a die attach pad by a first sinter bond. The package further includes a clip having a first end and a second end. The first end of the clip is attached to a device contact pad on the semiconductor die by a second sinter bond and the second end of the clip is attached to a post of a lead by a joint. The package further includes a mold body encapsulating the semiconductor die.