Abstract: One embodiment of the present invention provides a solar panel. The solar panel includes a plurality of subsets of solar cells. The solar cells in a subset are coupled in series, and the subsets of solar cells are coupled in parallel. The number of solar cells in a respective subset is sufficiently large such that the output voltage of the solar panel is substantially the same as an output voltage of a conventional solar panel with all of its substantially square shaped solar cells coupled in series.

Abstract: One embodiment of the present invention provides an electrode grid positioned at least on a first surface of a photovoltaic structure. The electrode grid can include a number of finger lines and an edge busbar positioned at an edge of the photovoltaic structure. The edge busbar can include one or more paste-alignment structures configured to facilitate confinement of conductive paste used for bonding the edge busbar to an opposite edge busbar of an adjacent photovoltaic structure.

Abstract: One embodiment of the invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can form a sacrificial layer on a first side of a Si substrate; load the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; and form a first doped Si layer on a second side of the Si substrate. The system subsequently can remove the sacrificial layer; load the Si substrate into a chemical vapor deposition tool, with the first doped Si layer facing a wafer carrier; and form a second doped Si layer on the first side of the Si substrate.

Abstract: One embodiment of the present invention provides a photovoltaic cell. The photovoltaic cell includes a multi-layer semiconductor structure with at least one tapered corner and an electrode that includes a metallic grid having a plurality of finger lines and a single busbar with multiple segments coupled to the finger lines. The single busbar is configured to collect current from the finger lines. The busbar may have a center portion and side portion(s). The side portion(s) may be connected to the center portion forming a non-180-degree angle with the center portion. The finger lines may also be connected to the side portion(s).

Abstract: One embodiment of the invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can form a sacrificial layer on a first side of a Si substrate; load the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; and form a first doped Si layer on a second side of the Si substrate. The system subsequently can remove the sacrificial layer; load the Si substrate into a chemical vapor deposition tool, with the first doped Si layer facing a wafer carrier; and form a second doped Si layer on the first side of the Si substrate.

Abstract: One embodiment of the present invention provides an electrode grid positioned at least on a first surface of a photovoltaic structure. The electrode grid can include a number of finger lines and an edge busbar positioned at an edge of the photovoltaic structure. The edge busbar can include one or more paste-alignment structures configured to facilitate confinement of conductive paste used for bonding the edge busbar to an opposite edge busbar of an adjacent photovoltaic structure.

Abstract: One embodiment of the present invention provides a solar panel. The solar panel includes a plurality of subsets of solar cells. The solar cells in a subset are coupled in series, and the subsets of solar cells are coupled in parallel. The number of solar cells in a respective subset is sufficiently large such that the output voltage of the solar panel is substantially the same as an output voltage of a conventional solar panel with all of its substantially square shaped solar cells coupled in series.

Abstract: One aspect of the invention provides a method of forming a semiconductor device (100). One aspect includes forming transistors (120, 125) on a semiconductor substrate (105), forming a first interlevel dielectric layer (165) over the transistors (120, 125), and forming metal interconnects (170, 175) within the first interlevel dielectric layer (165). A carbon-containing gas is used to form a silicon carbon nitride (SiCN) layer (180) over the metal interconnects (170, 175) and the first interlevel dielectric layer (165) within a deposition tool. An adhesion layer (185) is formed on the SiCN layer (180), within the deposition tool, by discontinuing a flow of the carbon-containing gas within the deposition chamber. A second interlevel dielectric layer (190) is formed over the adhesion layer (185).

Abstract: One aspect of the invention provides a method of forming a semiconductor device (100). One aspect includes forming transistors (120, 125) on a semiconductor substrate (105), forming a first interlevel dielectric layer (165) over the transistors (120, 125), and forming metal interconnects (170, 175) within the first interlevel dielectric layer (165). A carbon-containing gas is used to form a silicon carbon nitride (SiCN) layer (180) over the metal interconnects (170, 175) and the first interlevel dielectric layer (165) within a deposition tool. An adhesion layer (185) is formed on the SiCN layer (180), within the deposition tool, by discontinuing a flow of the carbon-containing gas within the deposition chamber. A second interlevel dielectric layer (190) is formed over the adhesion layer (185).