Abstract: Photovoltaic (PV) crystalline silicon modules and methods of manufacturing wherein the modules contain a non-glass front sheet, upper and lower encapsulate layers, a PV cell layer, an insulating sheet, and a structural back plane comprising an aluminum composite. The front sheet can be comprised of ETFE, the encapsulate layers comprise EVA, and the back plane preferably comprises APA. This particular configuration results in a lightweight PV module that still retains a high power density, and can be readily installed onto rooftops without traditional heavy racking. The PV module may be adhered to the roof using a double sided pressure sensitive adhesive or heat welded.

Abstract: Various embodiments of the invention provide an interconnect designed to be placed between layers of a photovoltaic laminate, and that has built-in in-plane stress relief features. In accordance with various embodiments, the interconnect, once implemented into a photovoltaic laminate, can withstand at least 200 temperature cycles, as is required by certain certifying bodies, without suffering failure.

Abstract: The present invention is directed toward apparatus and methods for solar panels capable of rooftop installation. In some embodiments, a low profile solar laminate is provided, comprising: a base layer; a photovoltaic layer; a semi-rigid panel; an ultraviolet resistant layer; wherein a first adhesive adheres the base layer to the semi-rigid panel, a second adhesive adheres the semi-rigid panel to the photovoltaic layer, and a third adhesive adheres the ultraviolet resistant layer to the photovoltaic layer.

Abstract: The present invention is directed toward apparatuses, systems and methods for solar panels capable of rooftop installation. In some embodiments, a low profile solar panel is provided, comprising: a solar laminate; and a flexible material sheet adhered to the solar laminate, wherein the flexible material sheet is configured to operate as a frame that supports and houses the solar laminate. In some such embodiments, the low profile solar panel further comprises a secondary sheet, wherein the secondary sheet is disposed on an edge formed by adhering the flexible material sheet to the solar laminate.

Abstract: A half-bridge driver circuit including a lower drive module and a floating upper drive module for driving respective external upper and lower power transistors of a high voltage half bridge is contained in an integrated circuit chip which includes an on-chip bootstrap diode emulator which is turned on in response to a control signal applied to its gate in order to pass current from a power supply to charge an external bootstrap capacitor that powers the upper drive module. The upper drive module is accommodated in an insulated well and the diode emulator includes as its main current carrying element, a JFET transistor formed along the periphery of the well. The JFET transistor is driven into a conducting state at the same time the lower power transistor is driven into a conducting state.

Abstract: A half-bridge driver circuit including a lower drive module and a floating upper drive module for driving respective external upper and lower power transistors of a high voltage half bridge is contained in an integrated circuit chip which includes an on-chip bootstrap diode emulator for charging an external bootstrap capacitor that powers the upper drive module. The upper drive is accommodated in an insulated well and the diode emulator includes as its main current carrying element, a LDMOS transistor formed along the periphery of the well. The LDMOS transistor is driven into a conducting state at the same time the lower power transistor is driven into a conducting state. A clamp and current source solidly bias the backate of the LDMOS while limiting the current drawn by a parasitic transistor attached to the backgate during startup of the LDMOS.

Abstract: A half-bridge driver circuit including a lower drive module and a floating upper drive module for driving respective external upper and lower power transistors of a high voltage half bridge is contained in an integrated circuit chip which includes an on-chip bootstrap diode emulator for charging an external bootstrap capacitor that powers the upper drive module. The upper drive is accommodated in an insulated well and the diode emulator includes as its main current carrying element, a LDMOS transistor formed along the periphery of the well. The LDMOS transistor is driven into a conducting state at the same time the lower power transistor is driven into a conducting state.