Abstract: An integrated circuit includes a semiconductor substrate patterned to include a first semiconductor track and a second semiconductor track separated from each other by a trench isolation region. The integrated circuit includes a logic circuit including a transistor having a first drain subregion in the first semiconductor track, a second drain subregion in the second semiconductor track, a first source subregion in the first semiconductor track, and a second source subregion in the second semiconductor track. A diffusion bridge of semiconductor material extends between the first and second semiconductor tracks and connects the first source subregion to the second source subregion. The first drain subregion and the second drain subregion are electrically connected by a drain metalization.

Abstract: An integrated circuit includes a data propagation path including a flip-flop. The flip-flop includes a first latch and a second latch. The integrated circuit includes a third latch that acts as a dummy latch. The input of the third latch is coupled to the output of the first latch. The integrated circuit includes a fault detector coupled to the output of the flip-flop and the output of the third latch. The third latch includes a signal propagation delay selected so that the third latch will fail to capture data in a given clock cycle before the second latch of the flip-flop fails to capture the data in the given clock cycle. The fault detector that detects when the third latch is failed to capture the data.

Abstract: An integrated circuit includes a data propagation path including a flip-flop. The flip-flop includes a first latch and a second latch. The integrated circuit includes a third latch that acts as a dummy latch. The input of the third latch is coupled to the output of the first latch. The integrated circuit includes a fault detector coupled to the output of the flip-flop and the output of the third latch. The third latch includes a signal propagation delay selected so that the third latch will fail to capture data in a given clock cycle before the second latch of the flip-flop fails to capture the data in the given clock cycle. The fault detector that detects when the third latch is failed to capture the data.

Abstract: A memory architecture includes a plurality of local input and output circuitries, with each local input and output circuitry associated with at least one memory bank. The memory architecture also includes a global input and output circuitry, which includes a plurality of global sub-write circuitries, is coupled to the plurality of local input and output circuitries One global sub-write circuitry is enabled and provides a write-data to a selected local input and output circuitry.

Abstract: A memory architecture includes a plurality of local input and output circuitries, with each local input and output circuitry associated with at least one memory bank. The memory architecture also includes a global input and output circuitry, which includes a plurality of global sub-write circuitries, is coupled to the plurality of local input and output circuitries One global sub-write circuitry is enabled and provides a write-data to a selected local input and output circuitry.

Abstract: A balanced differential amplifier sense amplifier senses the voltage level in a selected single bit line memory cell. The output of the selected single bit-line memory cell is connected to one input of the balanced differential sense amplifier while the other input receives a reference voltage provided by a corresponding single bit-line memory cell from a complementary memory bank. A supporting voltage is added-to/subtracted-from the reference voltage by providing a “bump” or “dip” mechanism or by utilizing a charge-sharing structure, in order to compensate for the variation in the sensed bit-line voltage over the duration of the sensing interval as well as for the disparity in voltage level from cell to cell.

Abstract: A balanced differential amplifier sense amplifier senses the voltage level in a selected single bit line memory cell. The output of the selected single bit-line memory cell is connected to one input of the balanced differential sense amplifier while the other input receives a reference voltage provided by a corresponding single bit-line memory cell from a complementary memory bank. A supporting voltage is added-to/subtracted-from the reference voltage by providing a “bump” or “dip” mechanism or by utilizing a charge-sharing structure, in order to compensate for the variation in the sensed bit-line voltage over the duration of the sensing interval as well as for the disparity in voltage level from cell to cell.